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Chaoyu He

Chaoyu He appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.otherphysics.comp-ph

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Published work

14 published item(s)

preprint2022arXiv

Flat-band based ferromagnetic semiconducting state in the graphitic C$_4$N$_3$ monolayer

A new set of lattice-models based on the hexagonal $\sqrt{N}\times\sqrt{N}$ super-cells of the well-known honeycomb lattice with single-hole defect (HL-D-1/2N) are proposed to realize the nontrivial isolated flat-bands. Through performing both tight-binding and density functional theory calculations, we demonstrate that the experimentally realized graphitic carbon nitride (Adv. Mater., 22, 1004, 2010; Nat. Commun., 9, 3366, 2018), the HL-D-1/8 based C$_4$N$_3$, is a perfect system to host such flat bands. For the flat high-energy P-6m2 C$_4$N$_3$ structure, it displays the ferromagnetic half-metallicity which is not related to the isolated flat bands. However, the P-6m2 C$_4$N$_3$ structure is dynamically unstable. Using a structure searching method based on group and graph theory, we find that a new corrugated Pca21 C4N3 structure has the lowest energy among all known C$_4$N$_3$ structures. This Pca21 C$_4$N$_3$ structure is an intrinsic ferromagnetic half-semiconductor (Tc$\approx$241 K) with one semiconducting spin-channel (1.75 eV) and one insulating spin-channel (3.64 eV), which is quite rare in the two-dimensional (2D) systems. Its ferromagnetic semiconducting property originates from the isolated p$_z$-state flat-band as the corrugation shift the flat band upward to the Fermi level. Interestingly, this Pca21 C$_4$N$_3$ structure is found to be piezoelectric and ferroelectric, which makes C$_4$N$_3$ an unusual transition-metal-free 2D multiferroic.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

New structure canditates for the experimentally synthesized heptazine-based and triazine-based two dimensional graphitic carbon nitride

The widely used crystal structures for both heptazine-based and triazine-based two-dimensional (2D) graphitic carbon nitride (g-C$_3$N$_4$) are the flat P-6m2 configurations. However, the experimentally synthesized 2D g-C$_3$N$_4$ possess thickness ranging in 0.2-0.5 nm, indicating that the theoretically used flat P-6m2 configurations are not the correct ground states. In this work, we propose three new corrugated structures P321, P3m1 and Pca21 with energies of 66 (86), 77 (87) and 78 (89) meV/atom lower than that of the corresponding heptazine-based (triazine-based) g-C$_3$N$_4$ in flat P-6m2 configuration, respectively. These corrugated structures have very similar periodic patterns to the flat P-6m2 ones and they are difficult to be distinguished from each other according to their top-views. The optimized thicknesses of the three corrugated structures ranging in 1.347-3.142 Å are in good agreement with the experimental results. The first-principles results show that these corrugated structural candidates are also semiconductors with band gaps slightly larger than those of the correspondingly flat P-6m2 ones. Furthermore, they possess also suitable band edge positions for sun-light-driven water-splitting at both $pH=0$ and $pH=7$ environments. Our results show that these three new structures are more promising candidates for the experimentally synthesized g-C$_3$N$_4$.

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preprint2020arXiv

Theoretical prediction of a low-energy Stone-Wales graphene with intrinsic type-III Dirac-cone

Based on first-principles method we predict a new low-energy Stone-Wales graphene SW40, which has an orthorhombic lattice with Pbam symmetry and 40 carbon atoms in its crystalline cell forming well-arranged Stone-Wales patterns. The calculated total energy of SW40 is just about 133 meV higher than that of graphene, indicating its excellent stability exceeds all the previously proposed graphene allotropes. We find that SW40 processes intrinsic Type-III Dirac-cone (Phys. Rev. Lett., 120, 237403, 2018) formed by band-crossing of a local linear-band and a local flat-band, which can result in highly anisotropic Fermions in the system. Interestingly, such intrinsic type-III Dirac-cone can be effectively tuned by inner-layer strains and it will be transferred into Type-II and Type-I Dirac-cones under tensile and compressed strains, respectively. Finally, a general tight-binding model was constructed to understand the electronic properties nearby the Fermi-level in SW40. The results show that type-III Dirac-cone feature can be well understood by the $π$-electron interactions between adjacent Stone-Wales defects.

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preprint2016arXiv

New Boys and Girls in Phosphorene Family from Gene Recombination: Different from Parents, Excellent than Parents

Based on the crystal structures of the previously proposed low energy phosphorene allotropes η-P and θ-P (Nano. Lett. 2015, 15, 3557), we propose five new structural stable phosphorene boys (XX-XY or XY-XY) and girls (XX-XX) through gene (XY from η-P and XX from θ-P) recombination methods. All of these five new phosphorene allotropes are obviously different from their parents, showing very different and fascinating two-dimensional patterns between each other. The dynamical stabilities of these phosphorene allotropes are confirmed positive and some of them are confirmed energetically more favorable than their parents (η-P and θ-P). Especially, the XX-XX type girl G1-P is confirmed energetically more favorable than all the previously proposed phosphorene allotropes, including black phosphorene (α-P, ACS Nano, 2014, 8, 4033) and blue phosphorene (β-P, Phys. Rev. Lett. 2014, 112, 176802), which is expected to be synthesized in future experiment through vapor deposition. Our results show that such a new promising phosphorene allotrope G1-P is an excellent candidate for potential applications in nano-electronics according to its middle band gap about 1.58 eV from DFT-HSE06 calculation.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nano-Stitching of Graphene Bilayers: A First-Principles Study

A nano-stitching method is proposed and investigated to modify graphene bilayers. Based this method, four types of low energy carbon allotropes, "wormhole graphene" allotropoes, are obtained and their structures, stabilities and electronic properties are investigated using first principles methods. We find that all of these wormhole graphene allotropoes are more favorable than graphdiyne and dynamically stable. Similar to carbon nanotubes and fullerences, these graphene allotropes are expected to act as two-dimensional periodic nano-capsules for encapsulating magnetic atoms or functional clusters for a variety of applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Two dimensional topological insulators with tunable band gaps: HgTe and HgSe monolayers

Employing ab initio electronic calculations, we propose a new type of two-dimensional (2D) topological insulator (TI), monolayer (ML) low buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gaps. Monolayer LB HgTe undergoes a transition to a topological nontrivial phase under the appropriate in-plane tensile strain (ε > 2.6%) due to the combination effects of strain and spin orbital coupling (SOC). Under the 2.6%< ε <4.2% tensile strain, the band inversion and topological nontrivial gap are induced by the SOC. For ε >4.2%, the band inversion is already realized by strain but the topological gap is induced by SOC. The band gap of monolayer LB HgTe TI phase can be tuned over a wide range from 0 eV to 0.20 eV as the tensile strain increases from 2.6% to 7.4%. Similarly, the topological phase transition of monolayer LB HgSe is induced by strain and SOC as the strain ε >3.1%. The topological band gap can be 0.05 eV as the strain increases to about 4.6%. The large band gap of 2D LB HgTe and HgSe monolayers make this type of material suitable for practical applications at room-temperature.

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preprint2015arXiv

Two-Dimensional PN Monolayer Sheets with Fantastic Structures and Properties

Three two-dimensional phosphorus nitride (PN) monolayer sheets (named as $α$-, $β$-, and $γ$-PN, respectively) with fantastic structures and properties are predicted based on first-principles calculations. The $α$-PN and $γ$-PN are buckled structure, whereas $β$-PN shows puckered characteristics. Their unique structures endows these atomic PN sheets with high dynamic stabilities and anisotropic mechanical properties. They are all indirect semiconductors and their band gap sensitively depends on the in-plane strain. Moreover, the nanoribbons patterned from these three PN monolayers demonstrate remarkable quantum size effect. Particularly, the Zigzag $α$-PN nanoribbon shows size-dependent ferromagnetism. Their significant properties show potential in nano-electronics. The synthesis of the three phases of PN monolayer sheets is proposed theoretically, which is deserved to further study in experiments.

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preprint2013arXiv

Magnetic Properties of Single Transition-Metal Atom Absorbed Graphdiyne and Graphyne Sheet

The electronic and magnetic properties of single 3d transition-metal(TM) atom (V, Cr, Mn, Fe, Co, and Ni) adsorbed graphdiyne (GDY) and graphyne (GY) are systematically studied using first-principles calculations within the density functional framework. We find that the adsorption of TM atom not only efficiently modulates the electronic structures of GDY/GY system, but also introduces excellent magnetic properties, such as half-metal and spin-select half-semiconductor. Such modulation originates from the charge transfer between TM adatom and the GDY/GY sheet as well as the electron redistribution of the TM intra-atomic s, p, and d orbitals. Our results indicate that the TM adsorbed GDY/GY are excellent candidates for spintronics.

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preprint2013arXiv

Pseudo-crystals of the group 14 elements with both 5-fold central rotation symmetry and divisional translation symmetry

Crystals are the materials which can be described by uniform periodic lattices. Traditionally, only the 1-, 2-, 3-, 4- and 6-fold rotation symmetries are allowed in crystals because other n-fold rotation symmetries are forbidden by the fully periodic translation symmetry. Materials containing rotation symmetries forbidden in crystals can be optionally described as quasicrystals with aperiodicity. The theoretical predictions and experimental discoveries of quasicrystals have enriched the knowledge of crystallography and topology, and expanded the capability of growing novel materials. Mathematically, one can fill the whole space with quasi-uniform lattices through divisional translations and arbitrary n-fold central rotations, including the 5-fold symmetry. However, it is unknown if such pseudo-crystals with 5-fold symmetry exist in reality. Here we propose a generalized crystal-prediction-method which can be used to search for potential pseudo-crystals possessing both arbitrary n-fold rotation symmetry and divisional translation symmetry. Successful examples with 5-fold central rotation symmetry based on the group 14 elements are discussed. We expect timely experimental explorations on such peculiar structures, especially on the very promising clathrate phases of the group 14 elements with only slightly larger binding energies compared with the diamond phases.

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preprint2013arXiv

Structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron

The structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron have been studied by first-principles calculations. Both a-boron and a*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of "3S-6D-3S" and "2S-6D-4S", respectively. The total energy calculations show that a*-boron is less stable than a-boron but more favorable than beta-boron and Gamma-boron at zero pressure. Both a-boron and a*-boron are confirmed dynamically and mechanically stable. The mechanical and electronic properties of a-boron and a*-boron indicate that they are potential superhard semiconducting phases of element boron.

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preprint2013arXiv

Systematic enumeration of crystalline networks with only sp2 configuration in cubic lattices

Systematic enumeration of crystalline networks with some special topological characters is of considerable interest in both mathematics and crystallography. Based on the restriction of lattice in cubic and inequivalent nodes not exceeding three, a simple method is proposed for systematic searching for three-dimensional crystalline networks with only sp2-configuration nodes (C-sp2-TDTCNs). We systematically scan the cubic space groups from No.195 to No.230 and find many C-sp2-TDTCNs including all the previously proposed cubic ones. These C-sp2-TDTCNs are topologically intriguing and can be considered as good templates for searching carbon crystals with novel properties, predicting high pressure phases of element nitrogen and designing three-dimensional hydrocarbon crystals. Structure optimizations are considered by regrading these C-sp2-TDTCNs as carbon crystals and the corresponding energetic stability of these carbon crystals are evaluated, using the the density functional theory (DFT) based first-principle calculations. Our results are of wide interests in mathematics, condensed physics, crystallography and material science.

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preprint2012arXiv

Four superhard carbon allotropes: First-principle study

Using a generalized genetic algorithm, we propose four new sp3 carbon allotropes with 5-6-7 (5-6-7-type Z-ACA and Z-CACB) or 4-6-8(4-6-8-type Z4-A3B1 and A4-A2B2) carbon rings. Their stability, mechanical and electronic properties are systematically studied using first-principles method. We find that all these four carbon allotropes show amazing stability in comparison with recently proposed carbon phases. Both ZACA and Z-CACB are direct-band-gap semiconductors with band gaps of 2.261 eV and 4.196 eV, respectively. Whereas Z4-A3B1 and A4-A2B2 are indirect-band-gap semiconductors with band gaps of 3.105 eV and 3.271 eV, respectively. Their mechanical properties reveal that all these four carbon allotropes are superhard materials comparable to diamond.

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preprint2012arXiv

Structure, stability and electronic properties of tricycle type graphane

We propose a new allotrope of graphane, named as tricycle graphane,with a 4up/2down UUUDUD hydrogenation in each hexagonal carbon ring,which is different from previously proposed allotropes with UUDUUD(boat-1) and UUUUDD (boat-2) types of hydrogenation. Its stability and electronic structures are systematically studied using first-principles method. We find that the tricycle graphane is a stable phase in between the previously proposed chair and stirrup allotropes. Its electronic properties are very similar to those of chair, stirrup, boat-1, boat-2, and twist-boat allotropes. The negative Gibbs free energy of tricycle graphane is -91 meV/atom, which very close to that of the most stable chair one (-103 meV/atom). Thus, this new two-dimensional hydrocarbon may be produced in the process of graphene hydrogenation with a relative high probability compared to other conformers.

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preprint2012arXiv

Two semiconducting three-dimensional all-sp2 carbon allotropes

Using first-principles method, we investigate the energetic stability, dynamic stability and electronic properties of two three-dimensional (3D) all-sp2 carbon allotropes, sp2-diamond and cubic-graphite. The cubic-graphite was predicted by Michael O'Keeffe in 1992 (Phys. Rev. Lett., 68, 15, 1992.) possessing space group of Pn-3m (224), whereas the sp2-diamond with the space group Fd-3m (227) same as that of diamond has not been reported before. Our results indicate that sp2-diamond is more stable than previously proposed K4-carbon and T-carbon, and cubic-graphite is even more stable than superhard M-carbon, W-carbon and Z-carbon.The calculations on vibrational properties show that both structures are dynamically stable. Interestingly, both sp2-diamond and cubic-graphite behave as semiconductors which are contrary to previously proposed all-sp2 carbon allotropes. The sp2-diamond is a semiconductor with a direct band gap of 1.66 eV, and cubic-graphite is an indirect semiconductor with band gap of 2.89 eV. The very lower densities and entirely sp2 configures of sp2-diamond and cubic-graphite can be potentially applied in hydrogen-storage, photocatalysts and molecular sieves.

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