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Huan-Cheng Yang

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2 published item(s)

preprint2022arXiv

Superconductivity in monolayer Ba$_2$N electride: a first-principles study

The exploration of superconductivity in low-dimensional materials has attracted intensive attention for decades. Based on first-principles electronic structure calculations, we have systematically investigated the electronic and superconducting properties of the two-dimensional electride Ba$_2$N in the monolayer limit. Our results show that monolayer Ba$_2$N has a low work function of 3.0 eV and a predicted superconducting transition temperature ($T_c$) of 3.4 K. The superconductivity can be further improved with the tensile strain, which results from the increase of density of states at the Fermi level as well as the enhanced coupling between inner-layer electrons and phonons. Remarkably, at the 4$\%$ tensile strain, the acoustic branches have noticeable softening at the K point of Brillouin zone and the superconducting $T_c$ can reach 10.8 K. The effect of lattice strain on the electron transfer from the superficial region to the inner-layer region of monolayer Ba$_2$N may also apply to other electride materials and influence their physical properties.

preprint2016arXiv

Perfect charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by the first-principles calculations

By the first-principles electronic structure calculations, we have systematically studied the electronic structures of recently discovered extremely large magnetoresistance (XMR) materials LaSb and LaBi. We find that both LaSb and LaBi are semimetals with the electron and hole carriers in perfect balance. The calculated carrier densities in the order of $10^{20}$ cm$^{-3}$ are in good agreement with the experimental values, implying long mean free time of carriers and thus high carrier mobilities. With a semiclassical two-band model, the perfect charge compensation and high carrier mobilities naturally explain (i) the XMR observed in LaSb and LaBi; (ii) the non-saturating quadratic dependence of XMR on external magnetic field; and (iii) the resistivity plateau in the turn-on temperature behavior at very low temperatures. The explanation of these features without resorting to the topological effect indicates that they should be the common characteristics of all perfectly electron-hole compensated semimetals.