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Hua Fan

Hua Fan contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2025arXiv

Reveal Hidden Pitfalls and Navigate Next Generation of Vector Similarity Search from Task-Centric Views

Vector Similarity Search (VSS) in high-dimensional spaces is rapidly emerging as core functionality in next-generation database systems for numerous data-intensive services -- from embedding lookups in large language models (LLMs), to semantic information retrieval and recommendation engines. Current benchmarks, however, evaluate VSS primarily on the recall-latency trade-off against a ground truth defined solely by distance metrics, neglecting how retrieval quality ultimately impacts downstream tasks. This disconnect can mislead both academic research and industrial practice. We present Iceberg, a holistic benchmark suite for end-to-end evaluation of VSS methods in realistic application contexts. From a task-centric view, Iceberg uncovers the Information Loss Funnel, which identifies three principal sources of end-to-end performance degradation: (1) Embedding Loss during feature extraction; (2) Metric Misuse, where distances poorly reflect task relevance; (3) Data Distribution Sensitivity, highlighting index robustness across skews and modalities. For a more comprehensive assessment, Iceberg spans eight diverse datasets across key domains such as image classification, face recognition, text retrieval, and recommendation systems. Each dataset, ranging from 1M to 100M vectors, includes rich, task-specific labels and evaluation metrics, enabling assessment of retrieval algorithms within the full application pipeline rather than in isolation. Iceberg benchmarks 13 state-of-the-art VSS methods and re-ranks them based on application-level metrics, revealing substantial deviations from traditional rankings derived purely from recall-latency evaluations. Building on these insights, we define a set of task-centric meta-features and derive an interpretable decision tree to guide practitioners in selecting and tuning VSS methods for their specific workloads.

preprint2022arXiv

Symmetry breaking and anomalous conductivity in a double moiré superlattice

A double moiré superlattice can be realized by stacking three layers of atomically thin two-dimensional materials with designer interlayer twisting or lattice mismatches. In this novel structure, atomic reconstruction of constituent layers could introduce significant modifications to the lattice symmetry and electronic structure at small twist angles. Here, we employ conductive atomic force microscopy (cAFM) to investigate symmetry breaking and local electrical properties in twisted trilayer graphene. We observe clear double moiré superlattices with two distinct moire periods all over the sample. At neighboring domains of the large moiré, the current exhibit either two- or six-fold rotational symmetry, indicating delicate symmetry breaking beyond the rigid model. Moreover, an anomalous current appears at the 'A-A' stacking site of the larger moiré, contradictory to previous observations on twisted bilayer graphene. Both behaviors can be understood by atomic reconstruction, and we also show that the cAFM signal of twisted graphene samples is dominated by the tip-graphene contact resistance that maps the local work function of twisted graphene and the metallic tip qualitatively. Our results unveil cAFM is an effective probe for visualizing atomic reconstruction and symmetry breaking in novel moiré superlattices, which could provide new insights for exploring and manipulating more exotic quantum states based on twisted van der Waals heterostructures.

preprint2018arXiv

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

Conductive ferroelectric domain walls--ultra-narrow and configurable conduction paths, have been considered as essential building blocks for future programmable domain wall electronics. For applications in high density devices, it is imperative to explore the conductive domain walls in small confined systems while earlier investigations have hitherto focused on thin films or bulk single crystals, noting that the size-confined effects will certainly modulate seriously the domain structure and wall transport. Here, we demonstrate an observation and manipulation of conductive domain walls confined within small BiFeO3 nano-islands aligned in high density arrays. Using conductive atomic force microscopy (CAFM), we are able to distinctly visualize various types of conductive domain walls, including the head-to-head charged walls (CDWs), zigzag walls (zigzag-DWs), and typical 71° head-to-tail neutral walls (NDWs). The CDWs exhibit remarkably enhanced metallic conductivity with current of ~ nA order in magnitude and 104 times larger than that inside domains (0.01 ~ 0.1 pA), while the semiconducting NDWs allow also much smaller current ~ 10 pA than the CDWs. The substantially difference in conductivity for dissimilar walls enables additional manipulations of various wall conduction states for individual addressable nano-islands via electrically tuning of their domain structures. A controllable writing of four distinctive states by applying various scanning bias voltages is achieved, offering opportunities for developing multilevel high density memories.

preprint2017arXiv

High density array of epitaxial BiFeO3 nanodots with robust and reversibly switchable topological domain states

The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for such applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high density arrays of epitaxial BiFeO3 (BFO) nanodots with lateral size as small as ~60 nm. We demonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time yet can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These result demonstrated that these reversibly switchable topological domain arrays are promising for applications in high density nanoferroelectric devices such as nonvolatile memories