Researcher profile

Hsiu-Chuan Hsu

Hsiu-Chuan Hsu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
6works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2023arXiv

Complementarity relations of a delayed-choice quantum eraser in a quantum circuit

We propose a quantum circuit that emulates a delayed-choice quantum eraser via bipartite entanglement with the extension that the degree of entanglement between the two paired quantons is adjustable. This provides a broader setting to test complementarity relations between interference visibility and which-way distinguishability in the scenario that the which-way information is obtained through entanglement without direct contact with the quantum state for interference. The visibility-distinguishability relations are investigated from three perspectives that differ in how the which-way information is taken into consideration. These complementarity relations can be understood in terms of entropic uncertainty relations in the information-theoretic framework and the triality relation that incorporates single-particle and bipartite properties. We then perform experiments on the quantum computers provided by the IBM Quantum platform to verify the theoretical predictions. We also apply the delay gate to delay the measurement of the which-way information to affirm that the measurement can be made truly in the "delayed-choice" manner.

preprint2021arXiv

Digital quantum simulation of dynamical topological invariants on near-term quantum computers

Programmable quantum processors are suitable platforms for simulating quantum systems, of which topological phases are of particular interest. We simulate the quench dynamics of a one-dimensional system on IBM Q devices. The topological properties of the dynamics are described by the dynamical topological invariants, the dynamical winding number and the time-dependent Berry phase, which are simulated with the quantum circuit model. The results show that despite the noise present in the current quantum computers, the dynamical topological invariants are robust. Moreover, to investigate the influence of open quantum system, we analytically solve the master equation in Lindblad form and show that the dynamical winding number and the change in Berry phase are not affected by the dissipation. This study sheds light on the robustness of topological phases on the noisy intermediate-scale quantum computers.

preprint2016arXiv

Electrically tunable spin polarization of chiral edge modes in a quantum anomalous Hall insulator

In the quantum anomalous Hall effect, chiral edge modes are expected to conduct spin polarized current without dissipation and thus hold great promise for future electronics and spintronics with low energy consumption. However, spin polarization of chiral edge modes has never been established in experiments. In this work, we theoretically study spin polarization of chiral edge modes in the quantum anomalous Hall effect, based on both the effective model and more realistic tight-binding model constructed from the first principles calculations. We find that spin polarization can be manipulated by tuning either a local gate voltage or the Fermi energy. We also propose to extract spin information of chiral edge modes by contacting the quantum anomalous Hall insulator to a ferromagnetic (FM) lead. The establishment of spin polarization of chiral edge modes, as well as the manipulation and detection in a fully electrical manner, will pave the way to the applications of the quantum anomalous Hall effect in spintronics.

preprint2013arXiv

In-plane Magnetization Induced Quantum Anomalous Hall Effect

In a two-dimensional electron gas, the quantized Hall conductance can be induced by a strong magnetic field, known as the quantum Hall effect, and it can also result from the strong exchange coupling of magnetic ions, dubbed as the "quantum anomalous Hall effect". The quantum Hall effect requires the out-of-plane magnetic field, and similarly, it is commonly believed that the magnetization should be out-of-plane for the quantum anomalous Hall effect. In the present work, we find this condition is not necessary and predict that the quantum anomalous Hall effect can also be induced by the purely in-plane magnetization in two realistic systems, including Bi$_2$Te$_3$ thin film with magnetic doping and HgMnTe quantum wells with shear strains, when all the reflection symmetries are broken. An experimental setup is proposed to confirm this effect, the observation of which will pave the way to search for the quantum anomalous Hall effect in a wider range of materials.

preprint2013arXiv

Reentrant quantum anomalous Hall effect with in-plane magnetic fields in HgMnTe quantum wells

Quantum anomalous Hall effect has been predicted in HgMnTe quantum wells with an out-of-plane magnetization of Mn atoms. However, since HgMnTe quantum wells are paramagnetic, an out-of-plane magnetic field is required to polarize magnetic moments of Mn atoms, which inevitably induces Landau levels and makes it difficult to identify the origin of the quantized Hall conductance experimentally. In this work, we study the quantum anomalous Hall effect in the presence of an in-plane magnetic field in Mn doped HgTe quantum wells. For a small out-of-plane magnetic field, the in-plane magnetic field can drive the system from a normal insulating state to a quantum anomalous Hall state. When the out-of-plane magnetic field is slightly above the transition point, the system shows a reentrant behavior of Hall conductance, varying from $-e^2/h$ to 0 and back to $-e^2/h$, with increasing in-plane magnetic fields. The reentrant quantum anomalous Hall effect originates from the interplay between the exchange coupling of magnetic moments and the direct Zeeman coupling of magnetic fields. The calculation incorporating Landau levels shows that there is no qualitative change of the reentrant behavior.

preprint2009arXiv

Transverse force generated by an electric field and transverse charge imbalance in spin-orbit coupled systems

We use linear response theory to study the transverse force generated by an external electric field and hence possible charge Hall effect in spin-orbit coupled systems. In addition to the Lorentz force that is parallel to the electric field, we find that the transverse force perpendicular to the applied electric field may not vanish in a system with an anisotropic energy dispersion. Surprisingly, in contrast to the previous results, the transverse force generated by the electric field does not depend on the spin current, but in general, it is related to the second derivative of energy dispersion only. Furthermore, we find that the transverse force does not vanish in the Rashba-Dresselhaus system. Therefore, the non-vanishing transverse force acts as a driving force and results in charge imbalance at the edges of the sample. The estimated ratio of the Hall voltage to the longitudinal voltage is $\sim 10^{-3}$. The disorder effect is also considered in the study of the Rashba-Dresselhaus system. We find that the transverse force vanishes in the presence of impurities in this system because the vertex correction and the anomalous velocity of the electron accidently cancel each other.