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Howard E. Katz

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2012arXiv

Effects of carrier mobility and morphology in organic semiconductor spin valves

We studied spin transport in four organic semiconductors (OSCs) with different electronic properties, with Fe and Co as the top and bottom ferromagnetic (FM) contacts, respectively. Magnetoresistance (MR) effects were observed up to room temperature in junctions based on an electron-carrying OSC, tris(8-hyroxyquinoline) aluminum (Alq $_3$ ) and a hole-carrying OSC, copper phthalocyanine (CuPc). The MR shows similar temperature dependence for these two OSCs, which suggests that the FM leads rather than the OSCs play a dominant role on the spin-transport degradation with increasing temperature. We also investigated junctions based on two high lateral mobility electron-carrying OSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N, N'-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide (CF $_3$ -NTCDI). However, these junctions showed much weaker spin transport effects. Morphological studies suggest that these high mobility OSC films have much rougher surfaces than either Alq $_3$ or CuPc, therefore the degradation of spin transport may originate from enhanced scattering due to the rougher FM/OSC interfaces. Our study shows that FM/OSC interfaces play an important role for spin transport in organic devices and need further exploration.

preprint2008arXiv

Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures

We have studied magnetotransport in organic-inorganic hybrid multilayer junctions. In these devices, the organic semiconductor (OSC) Alq $_3$ (tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic (FM) Co and Fe layers. The thickness of the Alq $_3$ layer was in the range of 50-150 nm. Positive magnetoresistance (MR) was observed at 4.2 K in a current perpendicular to plane geometry, and these effects persisted up to room temperature. The devices' microstructure was studied by X-ray reflectometry, Auger electron spectroscopy and polarized neutron reflectometry (PNR). The films show well-defined layers with modest average chemical roughness (3-5 nm) at the interface between the Alq $_3$ and the surrounding FM layers. Reflectometry shows that larger MR effects are associated with smaller FM/Alq $_3$ interface width (both chemical and magnetic) and a magnetically dead layer at the Alq $_3$ /Fe interface. The PNR data also show that the Co layer, which was deposited on top of the Alq $_3$ , adopts a multi-domain magnetic structure at low field and a perfect anti-parallel state is not obtained. The origins of the observed MR are discussed and attributed to spin coherent transport. A lower bound for the spin diffusion length in Alq $_3$ was estimated as $43 \pm 5$ nm at 80 K. However, the subtle correlations between microstructure and magnetotransport indicate the importance of interfacial effects in these systems.

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