Researcher profile

Houssem Kallel

Houssem Kallel contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2010arXiv

Background-free quasi-steady-state photoinduced absorption spectroscopy by dual optical modulation

We present a simple and inexpensive means to measure background-free photoinduced absorption spectra by implementing a dual optical modulation scheme. Our objective is to measure quasi-steady-state absorption spectra of long-lived photoexcitations, such as polarons and triplet excitons in organic semiconductors, when the photoluminescence of the sample is strong compared to the photoinduced absorption signal. In our instrument, we modulate a continuous-wave laser at a frequency $f_{pu}$ with a mechanical chopper before exciting the material. We measure the fractional change of transmission of the sample with a tuneable monochromatic probe source modulated at a frequency $f_{pr}$, and with a digital lockin amplifier at a reference frequency $f_{ref} = f_{pu} + f_{pr}$. We generate the reference sinusoidal wave for the lockin amplifier using a simple home-built electronic circuit that generates their sum-frequency signal. This scheme allows measurement of the fractional change of transmittance of the sample induced by the pump laser at a frequency $f_{pu} + f_{pr}$ without parasitic signal at a frequency $f_{pu}$, such as photoluminescence of the sample or pump-laser scatter. We demonstrate the power of this approach by measuring cleanly the photoinduced absorption spectrum of a highly luminescent semiconductor polymer, poly(9,9-dioctylfluorene-co-benzothiadiazole), at 10\,K. We compare this measurement favourably with that obtained by simple modulation of the pump laser after subtraction of the dominant photoluminescence background.

preprint2010arXiv

Evolution of the potential-energy surface of amorphous silicon

The link between the energy surface of bulk systems and their dynamical properties is generally difficult to establish. Using the activation-relaxation technique (ART nouveau), we follow the change in the barrier distribution of a model of amorphous silicon as a function of the degree of relaxation. We find that while the barrier-height distribution, calculated from the initial minimum, is a unique function that depends only on the level of distribution, the reverse-barrier height distribution, calculated from the final state, is independent of the relaxation, following a different function. Moreover, the resulting gained or released energy distribution is a simple convolution of these two distributions indicating that the activation and relaxation parts of a the elementary relaxation mechanism are completely independent. This characterized energy landscape can be used to explain nano-calorimetry measurements.