Researcher profile

Hooman Farkhani

Hooman Farkhani contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2023arXiv

Spin-Orbit Torque Flash Analog-to-Digital Converter

Although Analog-to-digital converters (ADCs) are critical components in mixed-signal integrated circuits (IC), their performance has not been improved significantly over the last decade. To achieve a radical improvement (compact, low power and reliable ADCs), spintronics can be considered as a proper candidate due to its compatibility with CMOS and wide applications in storage, neuromorphic computing, and so on. In this paper, a proof-of-concept of a 3-bit spin-CMOS Flash ADC using in-plane-anisotropy magnetic tunnel junctions (i-MTJs) with spin-orbit torque (SOT) switching mechanism is designed, fabricated and characterized. The proposed ADC replaces the current mirrors and power-hungry comparators in the conventional Flash ADC with seven parallel i-MTJs with different heavy metal (HM) widths. Monte-Carlo simulations based on the experimental measurements show the process variations/mismatch limits the accuracy of the proposed ADC to 2 bits. Moreover, the maximum differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.739 LSB (least significant bit) and 0.7319 LSB, respectively.

preprint2021arXiv

Analysis and Design of a PMUT-based transducer for Powering Brain Implants

This paper presents an analytical design of an ultrasonic power transfer system based on piezoelectric micro-machined ultrasonic transducer (PMUT) for fully wireless brain implants in mice. The key steps like the material selection of each layer and the top electrode radius to maximize the coupling factor are well-detailed. This approach results in the design of a single cell with a high effective coupling coefficient. Furthermore, compact models are used to make the design process less time-consuming for designers. These models are based on the equivalent circuit theory for the PMUT. A cell of 107 um in radius, 5 um in thickness of Lead Zirconate Titanium (PZT), and 10 um in thickness of silicon (Si) is found to have a 4% of effective coupling coefficient among the highest values for a clamped edge boundary conditions. Simulation results show a frequency of 2.84 MHz as resonance. In case of an array, mutual impedance and numerical modeling are used to estimate the distance between the adjacent cells. In addition, the area of the proposed transducer and the number of cells are computed with the Rayleigh distance and neglecting the cross-talk among cells, respectively. The designed transducer consists of 7x7 cells in an area of 3.24 mm2. The transducer is able to deliver an acoustic intensity of 7.185 mW/mm2 for a voltage of 19.5 V for powering brain implants seated in the motor cortex and striatum of the mice's brain. The maximum acoustic intensity occurs at a distance of 2.5 mm in the near field which was estimated with the Rayleigh length equation.