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Hongyu Ge

Hongyu Ge appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2015arXiv

A theoretical investigation on the transport properties of armchair biphenylene nanoribbons

Armchair biphenylene nanoribbons are investigated by using density functional theory. The nanoribbon that contains one biphenylene subunit in a unit cell is a semiconductor with a direct band gap larger than 1 eV, while that containing four biphenylene subunits is a metal. The semiconducting nanoribbon has high electron mobility of 57174 cm2V-1s-1, superior to armchair graphene nanoribbons. Negative differential resistance behavior is observed in two electronic devices composed of the semiconducting and metallic nanoribbons. The on/off ratios are in the order of 10^3. All these indicate that armchair biphenylene nanoribbons are potential candidates for ultra-small logic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A theoretical prediction on huge hole and electron mobilities of 6,6,18-graphdiyne nanoribbons

Two-dimensional 6,6,18-graphdiyne and the corresponding one-dimensional nanoribbons are investigated using crystal orbital method. Based on HSE06 functional, the one-dimensional confinement increases the band gaps. With band gaps larger than 0.4 eV, thirty-three 6,6,18-graphdiyne nanoribbons have larger majority carrier mobilities at room temperature than the highest value of armchair graphene nanoribbons. Unlike γ-graphdiyne, 6,6,18-graphdiyne nanoribbons have both huge hole and electron mobilities, depending on whether they are armchair or zigzag type. The huge mobilities are explained by crystal orbital analysis. The superior capabilities of 6,6,18-graphdiyne nanoribbons make them possible candidates for high speed electronic devices in complementary circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Theoretical investigation on armchair graphene nanoribbons with oxygen-terminated edges

Armchair graphene nanoribbons with different proportions of edge oxygen atoms are investigated by using crystal orbital method based on density functional theory. All the nanoribbons are energetically favorable, although buckled edges are present. Isolated edge oxygen atoms cause semiconductor-metal transition via introducing edge states, while adjacent edge oxygen atoms not. For the graphene nanoribbons with all oxygen atoms on the edges, both band gap and carrier mobility alternate with respect to the ribbon width. The carrier mobilities are as 18%-65% large as those of the graphene nanoribbons with hydrogen-terminated edges. These values are as large as 103 cm2V-1s-1, which are still quite high for electronic devices. Crystal orbital analysis gives pictorial explanations to the phenomenon.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Theoretical investigation on electronic properties and carrier mobilities of armchair graphyne nanoribbons

Seven types of armchair graphyne nanoribbons are investigated with HSE06 functional. The quantum confinements in the graphyne nanoribbons open or increase the band gaps of the corresponding two-dimensional graphynes, which is crucial to high on/off ratio in electronic device operation. The major carrier mobilities of the graphyne nanoribbons with high percentage of sp hybridized carbon atoms are very large. The sparse linking pattern results in small number of frontier crystal orbitals and small deformation potential constants, which are responsible for the large carrier mobilities. Some graphyne nanoribbons have band gaps larger than 0.4 eV. Meanwhile, they have both high hole and electron mobilities. These benefit current complementary circuit with low power dissipation. Especially, the hole and electron mobilities of 14,14,18-graphyne nanoribbons are more than an order larger than those of the armchair graphene nanoribbons, indicating that they have potential applications in high speed electronic devices.

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