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Researcher profile

Hongyan Mei

Hongyan Mei contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phphysics.opticscond-mat.mtrl-sciquant-ph

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Published work

3 published item(s)

preprint2026arXiv

Anti-reflection coatings for highly anisotropic materials in the mid infrared

We develop and optimize thin anti-reflection coatings (ARCs) for highly anisotropic materials in the mid infrared. Unlike conventional ARCs that assume nearly isotropic refractive indices, this work fully integrates the anisotropic nature of materials into the design process. We describe two designs of thin ARCs for highly anisotropic materials: a single form-birefringent layer, and a planar bilayer. We realized the planar bilayer ARC experimentally, demonstrating excellent mid-infrared anti-reflectance across over a broad range of angles for all polarizations.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Silicon-on-sapphire metasurfaces generate arrays of dark and bright traps for neutral atoms

We demonstrated crystalline silicon-on-sapphire (c-SOS) metasurfaces that convert a Gaussian beam into arrays of complex optical traps, including arrays of optical bottle beams that trap atoms in dark regions interleaved with bright tweezer arrays. The high refractive index and indirect band gap of crystalline silicon makes it possible to design high-resolution near-infrared ($λ>700$ nm) metasurfaces that can be manufactured at scale using CMOS-compatible processes. Compared with active components like spatial light modulators (SLMs) that have become widely used to generate trap arrays, metasurfaces provide an indefinitely scalable number of pixels, enabling large arrays of complex traps in a very small form factor, as well as reduced dynamic noise. To design metasurfaces that can generate three-dimensional bottle beams to serve as dark traps, we modified the Gerchberg-Saxton algorithm to enforce complex-amplitude profiles at the focal plane of the metasurface and to optimize the uniformity of the traps across the array. We fabricated and measured c-SOS metasurfaces that convert a Gaussian laser beam into arrays of bright traps, dark traps, and interleaved bright/dark traps.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams

We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, vanadium dioxide (VO2), locally modifying its insulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of doping or defect density are required.

0 citations0 reviewsNo code linkedOpen access