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Hongxuan Guo

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cond-mat.mtrl-sci cond-mat.other physics.app-ph

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preprint2020arXiv

Probing Electrified Liquid-Solid Interfaces with Scanning Electron Microscopy

Electrical double layers play a key role in a variety of electrochemical systems. The mean free path of secondary electrons in aqueous solutions is on the order of a nanometer, making them suitable for probing of ultrathin electrical double layers at solid-liquid electrolyte interfaces. Employing graphene as an electron-transparent electrode in a two-electrode electrochemical system, we show that the secondary electron yield of the graphene-liquid interface depends on the ionic strength and concentration of electrolyte and applied bias at the remote counter electrode. These observations have been related to polarization-induced changes in the potential distribution within the electrical double layer and demonstrate the feasibility of using scanning electron microscopy to examine and map electrified liquid-solid interfaces

preprint2009arXiv

Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory

We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors. Well-developed unipolar switching behaviors in amorphous LaLuO3 make it suited for not only logic but memory applications using the conventional semiconductor or the emerging nano/CMOS architectures. The conduction transition between high- and low- resistance states is attributed to the change in the separation between oxygen vacancy sites in the light of the correlated barrier hopping theory. The mean migration distances of vacancies responsible for the resistive switching are demonstrated in nanoscale, which could account for the ultrafast programming speed of 6 ns. The origin of the distributions in switching parameters in oxides can be well understood according to the switching principle. Furthermore, an approach has also been developed to make the operation voltages predictable for the practical applications of resistive memories.