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Hong Luo

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physics.comp-ph cond-mat.mtrl-sci math.AP physics.flu-dyn

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preprint2020arXiv

A least-squares based nodal scheme for cell-centered Lagrangian hydrodynamics

This paper presents a new and efficient nodal scheme for cell-centered compressible flows in Lagrangian formulation. A single pressure and the velocity at cell vertex are computed by the nodal solver in a least-squares sense, and both variables are used to evaluate the numerical flux across the cell interface. The resulting nodal velocity is also responsible for moving the mesh. The accuracy and robustness of the proposed method is studied by several numerical examples in the finite volume discretization, and compared with two other nodal Riemann solvers. It is shown that its performance is comparable to the latter two. Although the current paper mainly focuses on the first-order finite volume (FV), its extension to higher order methods such as high-order FV, discontinuous Galerkin (DG) or reconstructed discontinous Galerkin (rDG), is quite straightforward. And this method has the capability of easily extending to three dimensions.

preprint2020arXiv

Reconstructed discontinuous Galerkin method for compressible flows in arbitrary Lagrangian-Eulerian formulation

We present a high-order accurate reconstructed discontinuous Galerkin (rDG) method in arbitrary Lagrangian-Eulerian (ALE) formulation, for solving two-dimensional compressible flows on moving and deforming domains with unstructured curved meshes. The Taylor basis functions in use are defined on the time-dependent domain, on which also the integration and computations are performed. A third order ESDIRK3 scheme is employed for the temporal integration. The Geometric Conservation Law (GCL) is satisfied by modifying the grid velocity terms on the right-hand side of the discretized equations at Gauss quadrature points. To avoid excessive distortion and invalid elements near the moving boundary, we use the radial basis function (RBF) interpolation method for propagating the mesh motion of the boundary nodes to the interior of the mesh. Several numerical examples are performed to verify the designed spatial and temporal orders of accuracy, and to demonstrate the ability of handling moving boundary problems of the rDG-ALE method.

preprint2014arXiv

A predicable condition for boundary layer separation of 2-D incompressible fluid flows

In this paper, the solutions of Navier-Stokes equations with Dirichlet boundary conditions governing 2-D incompressible fluid flows are considered. A condition for boundary layer separation, which is determined by initial values and external forces, is obtained. More importantly, the condition can predict directly when and where boundary layer separation will occur. The main technical tool is geometric theory of incompressible flows developed by T. Ma and S.Wang.

preprint2014arXiv

Global Solution of Atmospheric Circulation Models with Humidity Effect

The atmospheric circulation models are deduced from the very complex atmospheric circulation models based on the actual background and meteorological data. The models are able to show features of atmospheric circulation and are easy to be studied. It is proved that existence of global solutions to atmospheric circulation models with the use of the $T$-weakly continuous operator.

preprint2013arXiv

Realizing Chemical Codoping in Oxide Semiconductors

We demonstrate experimentally a chemical codoping approach that would simultaneously narrow the band gap and control the band edge positions of oxide semiconductors. Using TiO2 as an example, we show that a sequential doping scheme with nitrogen (N) leading the way, followed by phosphorous (P), is crucial for the incorporation of both N and P into the anion sites. Various characterization techniques confirm the formation of the N-P bonds, and as a consequence of the chemical codoping, the band gap of the TiO2 is reduced from 3.0 eV to 1.8 eV. The realization of chemical codoping could be an important step forward in improving the general performance of electronic and optoelectronic materials and devices.