Researcher profile

Hong Jin Fan

Hong Jin Fan contributes to research discovery and scholarly infrastructure.

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Published work

1 published item(s)

preprint2020arXiv

Ferroelastic-switching-driven colossal shear strain and piezoelectricity in a hybrid ferroelectric

Materials that can produce large controllable strains are widely used in shape memory devices, actuators and sensors. Great efforts have been made to improve the strain outputs of various material systems. Among them, ferroelastic transitions underpin giant reversible strains in electrically-driven ferro/piezoelectrics and thermally- or magneticallydriven shape memory alloys. However, large-strain ferroelastic switching in conventional ferroelectrics is very challenging while magnetic and thermal controls are not desirable for applications. Here, we demonstrate an unprecedentedly large shear strain up to 21.5 % in a hybrid ferroelectric, C6H5N(CH3)3CdCl3. The strain response is about two orders of magnitude higher than those of top-performing conventional ferroelectric polymers and oxides. It is achieved via inorganic bond switching and facilitated by the structural confinement of the large organic moieties, which prevents the undesired 180-degree polarization switching. Furthermore, Br substitution can effectively soften the bonds and result in giant shear piezoelectric coefficient (d35 ~ 4800 pm/V) in Br-rich end of the solid solution, C6H5N(CH3)3CdBr3xCl3(1-x). The superior electromechanical properties of the compounds promise their potential in lightweight and high energy density devices, and the strategy described here should inspire the development of next-generation piezoelectrics and electroactive materials based on hybrid ferroelectrics.