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Holly N. Tinkey

Holly N. Tinkey appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2022arXiv

Transport-enabled entangling gate for trapped ions

We implement a two-qubit entangling Mølmer-Sørensen interaction by transporting two co-trapped $^{40}\mathrm{Ca}^{+}$ ions through a stationary, bichromatic optical beam within a surface-electrode Paul trap. We describe a procedure for achieving a constant Doppler shift during the transport which uses fine temporal adjustment of the moving confinement potential. The fixed interaction duration of the ions transported through the laser beam as well as the dynamically changing ac Stark shift require alterations to the calibration procedures used for a stationary gate. We use the interaction to produce Bell states with fidelities commensurate to those of stationary gates performed in the same system. This result establishes the feasibility of actively incorporating ion transport into quantum information entangling operations.

preprint2014arXiv

Inelastic electron tunneling spectroscopy of local "spin accumulation" devices

We investigate the origin of purported "spin accumulation" signals observed in local "three-terminal" (3T) measurements of ferromagnet/insulator/n-Si tunnel junctions using inelastic electron tunneling spectroscopy (IETS). Voltage bias and magnetic field dependences of the IET spectra were found to account for the dominant contribution to 3T magnetoresistance signals, thus indicating that it arises from inelastic tunneling through impurities and defects at junction interfaces and within the barrier, rather than from spin accumulation due to pure elastic tunneling into bulk Si as has been previously assumed.

preprint2014arXiv

Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions

Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating the necessary self-consistency between electrochemical potential splitting, spin-dependent injection current, and applied voltage that can be used to simulate this so-called "3T" signal as a function of temperature, doping, ferromagnet bulk spin polarization, tunnel barrier features and conduction nonlinearity, and junction voltage bias.