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Researcher profile

Hiroyuki Yamada

Hiroyuki Yamada contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

2 published item(s)

preprint2014arXiv

Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

We demonstrate the feasibility of multilevel recording in Pt/Bi(1-d)FeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi(1-d)FeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi(1-d)FeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

A ferroelectric memristor

Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.

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