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Source author record

Hiroshi Imamura

Hiroshi Imamura appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.chem-phcond-mat.othercond-mat.stat-mechcond-mat.str-elphysics.app-phquant-ph

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Published work

31 published item(s)

preprint2022arXiv

Precession dynamics of a small magnet with non-Markovian damping: Theoretical proposal for an experiment to determine the correlation time

Recent advances in experimental techniques have made it possible to manipulate and measure the magnetization dynamics on the femtosecond time scale which is the same order as the correlation time of the bath degrees of freedom. In the equations of motion of magnetization, the correlation of the bath is represented by the non-Markovian damping. For development of the science and technologies based on the ultrafast magnetization dynamics it is important to understand how the magnetization dynamics depend on the correlation time. It is also important to determine the correlation time experimentally. Here we study the precession dynamics of a small magnet with the non-Markovian damping. Extending the theoretical analysis of Miyazaki and Seki [J. Chem. Phys. 108, 7052 (1998)] we obtain analytical expressions of the precession angular velocity and the effective damping constant for any values of the correlation time under assumption of small Gilbert damping constant. We also propose a possible experiment for determination of the correlation time.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Estimation of Rectifying Performance for Terahertz Wave in Newly Designed Fe/ZnO/MgO/Fe Magnetic Tunnel Junction

We fabricated fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with low junction resistance-area products (several $Ω$ $μ$m$^2$) and conducted a theoretical estimation of square-low rectifying performance for a terahertz electromagnetic wave. Effective current responsivity up to 0.09 A/W at 1 THz was obtained under zero-bias voltage condition at room temperature. The result is approximately half the value of the best result obtained for experiments in semiconductor-based diodes, performed under similar conditions. The study strongly suggests that this MTJ system has a great potential for the rectifying element of the terahertz wave.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large angle precession of magnetization maintained by a microwave voltage

Effects of a microwave voltage on magnetization precession are analyzed based on a macrospin model. The microwave voltage induces the oscillating anisotropy field through the voltage controlled magnetic anisotropy (VCMA) effect, and then stimulates the magnetization. The large angle precession is maintained if the magnetization synchronizes with the microwave voltage. The effective equations of motion of the magnetization with an oscillating anisotropy field are derived, and the mechanism of the synchronization is clarified by analyzing the derived equations of motion. The conditions of the angular frequency detuning and the amplitude of the oscillating anisotropy field for synchronization are obtained. The results are useful for development of the VCMA-based energy-efficient spintronics devices using magnetization precession such as a VCMA-based magnetoresistive random access memory and a nano-scale microwave magnetic field generator.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Low power switching of magnetization using enhanced magnetic anisotropy with short-voltage-pulse application

A low power magnetization switching scheme based on the voltage control of magnetic anisotropy (VCMA) is proposed. In contrast to the conventional switching scheme using VCMA, where the magnetic anisotropy is eliminated during the voltage pulse, the magnetic anisotropy is enhanced to induce precession around the axis close to the easy axis. After turning off the voltage proximately at a half of precession period, the magnetization relaxes to the opposite equilibrium direction. We perform numerical simulations and show that the pulse duration of the proposed switching scheme is as short as a few tens of pico seconds. Such a short pulse duration is beneficial for low power consumption because of the reduction of energy loss by Joule heating.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Vortex Dynamics-Mediated Low-Field Magnetization Switching in an Exchange-Coupled System

A magnetic vortex has attracted significant attention since it is a topologically stable magnetic structure in a soft magnetic nanodisk. Many studies have been devoted to understanding the nature of magnetic vortex in isolated systems. Here we show a new aspect of a magnetic vortex the dynamics of which strongly affects the magnetic structures of environment. We exploit a nanodot of an exchange-coupled bilayer with a soft magnetic Ni81Fe19 (permalloy; Py) having a magnetic vortex and a perpendicularly magnetized L10-FePt exhibiting a large switching field (Hsw). The vortex dynamics with azimuthal spin waves makes the excess energy accumulate in the Py, which triggers the reversed-domain nucleation in the L10-FePt at a low magnetic field. Our results shed light on the non-local mechanism of a reversed-domain nucleation, and provide with a route for efficient Hsw reduction that is needed for ultralow-power spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Large amplitude oscillation of magnetization in spin-torque oscillator stabilized by field-like torque

Oscillation frequency of spin torque oscillator with a perpendicularly magnetized free layer and an in-plane magnetized pinned layer is theoretically investigated by taking into account the field-like torque. It is shown that the field-like torque plays an important role in finding the balance between the energy supplied by the spin torque and the dissipation due to the damping, which results in a steady precession. The validity of the developed theory is confirmed by performing numerical simulations based on the Landau-Lifshitz-Gilbert equation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Current dependence of spin torque switching rate based on Fokker-Planck approach

The spin torque switching rate of an in-plane magnetized system in the presence of an applied field is derived by solving the Fokker-Planck equation. It is found that three scaling currents are necessary to describe the current dependence of the switching rate in the low-current limit. The dependences of these scaling currents on the applied field strength are also studied.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Role of Magnetic Field in Self-Oscillation of Nanomagnet Excited by Spin Torque

The critical current of the self-oscillation of spin torque oscillator (STO) consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer was studied by solving the Landau-Lifshitz-Gilbert (LLG) equation. We found that the critical current diverged at certain field directions, indicating that the self-oscillation does not occur at these directions. It was also found that the sign of the critical current changed depending on the applied field direction.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Self-Oscillation in Spin Torque Oscillator Stabilized by Field-like Torque

The self-oscillation of the magnetization in a spin torque oscillator (STO) with a perpendicularly magnetized free layer and an in-plane magnetized pinned layer in the absence of an applied magnetic field was studied by numerically solving the Landau-Lifshitz-Gilbert equation. It was pointed out that field-like torque was necessary to realize stable self-oscillation in this type of STO at zero field. The numerical simulation at finite temperature showed that the presence of the field-like torque led to a high power with a relatively high oscillation frequency.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Critical Field of Spin Torque Oscillator with Perpendicularly Magnetized Free Layer

The oscillation properties of a spin torque oscillator consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer are studied based on an analysis of the energy balance between spin torque and damping. The critical value of an external magnetic field applied normal to the film plane is found, below which the controllable range of the oscillation frequency by the current is suppressed. The value of the critical field depends on the magnetic anisotropy, the saturation magnetization, and the spin torque parameter.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Current Dependence of Spin Torque Switching Barrier

The current dependence of the switching barrier for spin torque switching of an in-plane magnetized ferromagnet was studied. Two scaling currents, I_{c}$ and I_{c}^{*}(>I_{c}), were introduced to distinguish the magnetization stability. In the low-current region I<I_{c}, the switching barrier is linear to the current with another scaling current \tilde{I}_{c}, while such linear scaling does not hold in the high-current region I_{c} < I < I_{c}^{*}. The linear scaling is valid for the high temperature and the long current pulse duration time.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Dependence of spin torque diode voltage on applied field direction

The optimum condition of an applied field direction to maximize spin torque diode voltage was theoretically derived for a magnetic tunnel junction with a perpendicularly magnetized free layer and an in-plane magnetized pinned layer. We found that the diode voltage for a relatively small applied field is maximized when the projection of the applied field to the film-plane is parallel or anti-parallel to the magnetization of the pinned layer. However, by increasing the applied field magnitude, the optimum applied field direction shifts from the parallel or anti-parallel direction. These analytical predictions were confirmed by numerical simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Maximizing Spin Torque Diode Voltage by Optimizing Magnetization Alignment

The optimum condition of the magnetization alignment to maximize the spin torque diode voltage is derived by solving the Landau-Lifshitz-Gilbert equation. We show that the optimized diode voltage can be one order of magnitude larger than that of the conventional alignment where the easy axes of the free and the pinned layers are parallel. These analytical predictions are confirmed by numerical simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Penetration of a magnetic wall into thin ferromagnetic electrodes of a nano-contact spin valve

We theoretically analyzed a magnetic wall confined in a nano-contact spin valve paying special attention to the penetration of the magnetic wall into thin ferromagnetic electrodes. We showed that, compared with the Bloch wall, the penetration of the Neel wall is suppressed by increases of the demagnetization energy. We found the optimal conditions of the radius and height of the nano-contact to maximize the power of the current-induced oscillation of the magnetic wall. We also found that the thermal stability of the Bloch wall increases when the nano-contact's radius increases or height decreases.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin torque switching of an in-plane magnetized system in a thermally activated region

The current dependence of the exponent of the spin torque switching rate of an in-plane magnetized system was investigated by solving the Fokker-Planck equation with low temperature and small damping and current approximations. We derived the analytical expressions of the critical currents, I_{c} and I_{c}^{*}. At I_{c}, the initial state parallel to the easy axis becomes unstable, while at I_{c}^{*} (\simeq 1.27 I_{c}) the switching occurs without the thermal fluctuation. The current dependence of the exponent of the switching rate is well described by (1-I/I_{c}^{*})^{b}, where the value of the exponent b is approximately unity for I < I_{c}, while b rapidly increases up to 2.2 with increasing current for I_{c} < I < I_{c}^{*}. The linear dependence for I < I_{c} agrees with the other works, while the nonlinear dependence for I_{c} < I < I_{c}^{*} was newly found by the present work. The nonlinear dependence is important for analysis of the experimental results, because most experiments are performed in the current region of I_{c} < I < I_{c}^{*}.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Theoretical Study of Spin-Torque Oscillator with Perpendicularly Magnetized Free Layer

The magnetization dynamics of spin torque oscillator (STO) consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer was studied by solving the Landau-Lifshitz-Gilbert equation. We derived the analytical formula of the relation between the current and the oscillation frequency of the STO by analyzing the energy balance between the work done by the spin torque and the energy dissipation due to the damping. We also found that the field-like torque breaks the energy balance, and change the oscillation frequency.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thermally activated switching rate of a nanomagnet in the presence of spin torque

The current dependence of the spin torque switching rate in a thermally activated region of an in-plane magnetized system was studied. The logarithm of the switching rate depended nonlinearly on current in the high-current region, I_{c} < I < I_{c}^{*}, where I_{c} and I_{c}^{*} are critical currents distinguishing the stability of the magnetization. We also found that the attempt frequency had a minimum around I_{c}, and that the attempt frequency at I_{c} was three orders of magnitude smaller than that at zero current, contrary to the assumption in previous analyses of experiments that it remains constant.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Appearance of Flat Bands and Edge States in Boron-Carbon-Nitride Nanoribbons

Presence of flat bands and edge states at the Fermi level in graphene nanoribbons with zigzag edges is one of the most interesting and attracting properties of nanocarbon materials but it is believed that they are quite fragile states and disappear when B and N atoms are doped at around the edges. In this paper, we theoretically investigate electronic and magnetic properties of boron-carbon-nitride (BCN) nanoribbons with zigzag edges where the outermost C atoms on the edges are alternately replaced with B and N atoms using the first principles calculations. We show that BCN nanoribbons have the flat bands and edge states at the Fermi level in both H_2 rich and poor environments. The flat bands are similar to those at graphene nanoribbons with zigzag edges, but the distributions of charge and spin densities are different between them. A tight binding model and the Hubbard model analysis show that the difference in the distribution of charge and spin densities is caused by the different site energies of B and N atoms compared with C atoms.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Dependence of spin torque switching probability on electric current

Dependence of the thermally assisted spin torque switching probability on the sweep electric current was investigated theoretically. The analytical expressions of the switching times for $b=1$ and $b=2$ are derived based on the rate equation, where $b$ is the exponent of the current term in the switching rate. The switching current is approximately proportional to the temperature $T$ and the logarithm of the sweep rate $v$ for both $b=1$ and $b=2$ in the experimentally performed ranges of $T$ and $v$. Experiments in very low temperature range are required to determine the exponent $b$.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Numerical Study on Spin Torque Switching in Thermally Activated Region

We studied the spin torque switching of the single free layer in the thermally activated region by numerically solving the Landau-Lifshitz-Gilbert equation. We found that the temperature dependence of the switching time of the in-plane magnetized system is nonlinear, which means $b \neq 1$. Here, $b$ is the exponent of the current term in the switching rate formula and has been widely assumed to be unity. This result enables us to evaluate the thermal stability of spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Proposal of an experimental scheme for determination of penetration depth of transverse spin current by a nonlocal spin valve

We theoretically propose an experiment to determine the penetration depth of a transverse spin current using a nonlocal spin valve with three ferromagnetic (F) layers, where the F_1, F_2, and F_3 layers act as the spin injector, detector, and absorber, respectively. We show that the penetration depth can be evaluated by measuring the dependence of the spin signal (magnetoresistance) on the thickness of the F_3 layer.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Theory of Spin Torque Assisted Thermal Switching of Single Free Layer

The spin torque assisted thermal switching of the single free layer was studied theoretically. Based on the rate equation, we derived the theoretical formulas of the most likely and mean switching currents of the sweep current assisted magnetization switching, and found that the value of the exponent $b$ in the switching rate formula significantly affects the estimation of the retention time of magnetic random access memory. Based on the Fokker-Planck approach, we also showed that the value of $b$ should be two, not unity as argued in the previous works.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thermal switching rate of a ferromagnetic material with uniaxial anisotropy

The field dependence of the thermal switching rate of a ferromagnetic material with uniaxial anisotropy was studied by solving the Fokker-Planck equation. We derived the analytical expression of the thermal switching rate using the mean first-passage time approach, and found that Brown's formula [Phys. Rev. 130, 1677 (1963)] is applicable even in the low barrier limit by replacing the attempt frequency with the proper factor which is expressed by the error function.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Edge States and Stacking Effects in Nanographene Systems

Bilayer graphene nanoribbon with zigzag edge is investigated with the tight binding model. Two stacking structures, alpha and beta, are considered. The band splitting is seen in the alpha structure, while the splitting in the wave number direction is found in the beta structure. The local density of states in the beta structure tend to avoid sites where inter-layer hopping interactions are present.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electron density distribution of bilayer nanographene and band structures of boron-carbon-nitride systems

Bilayer graphene nanoribbon with zigzag edge is investigated with the tight binding model. Two stacking structures, alpha and beta, are considered. The band splitting is seen in the alpha structure, while the splitting in the wave number direction is found in the beta structure. The local density of states in the beta structure tend to avoid sites where interlayer hopping interactions are present. The calculation is extended to the boron-carbon-nitride systems. The qualitative properties persist when zigzag edge atoms are replaced with borons and nitrogens.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Minimization of the Switching Time of a Synthetic Free Layer in Thermally Assisted Spin Torque Switching

We theoretically studied the thermally assisted spin torque switching of a synthetic free layer and showed that the switching time is minimized if the condition H_J=|H_s|/(2 alpha) is satisfied, where H_J, H_s and alpha are the coupling field of two ferromagnetic layers, the amplitude of the spin torque, and the Gilbert damping constant. We also showed that the coupling field of the synthetic free layer can be determined from the resonance frequencies of the spin-torque diode effect.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Thermally assisted spin transfer torque switching in synthetic free layers

We studied the magnetization reversal rates of thermally assisted spin transfer torque switching in a ferromagnetically coupled synthetic free layer theoretically. By solving the Fokker-Planck equation, we obtained the analytical expression of the switching probability for both the weak and the strong coupling limit. We found that the thermal stability is proportional to Delta_{0}(1-I/I_{c})^{2}, not Delta_{0}(1-I/I_{c}) argued by Koch et al. [Phys. Rev. Lett. 92, 088302 (2004)], where I and I_{c} are the electric current and the critical current of spin transfer torque switching at absolute zero temperature. The difference in the exponent of (1-I/I_{c}) leads to a significant underestimation of the thermal stability Delta_{0}. We also found that fast switching is achieved by choosing the appropriate direction of the applied field.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Proposal of a full Bell state analyzer for spin qubits in a double quantum dot

We propose a scheme for full Bell state measurement of spin qubits in a double quantum dot. Our scheme consists of Pauli spin-blockade measurements and biaxial electron-spin resonance. In order to eliminate the average of the Zeeman fields, the double quantum dot is designed so that the Landé g-factors of first and second dots satisfy g1=g2 with the use of g-factor engineering. Thus, we can swap one of the three spin-triplet states for the spin-singlet state without disturbing the other states. Our study shows that the sequential spin-to-charge conversions enable us to implement the full Bell state measurement of electron-spin qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Boltzmann theory of magnetoresistance due to a spin spiral

We studied the magnetoresistance due to a spin spiral by solving the Boltzmann equation. The scattering rates of conduction electrons are calculated by using the non-perturbative wave function of the conduction electrons and the non-equilibrium distribution function is obtained by numerically solving the Boltzmann equation. These enable us to calculate the resistivity of a sufficiently thin spin spiral. A magnetoresistance ratio of more than 50% is predicted for a spin spiral with high spin polarization (>0.8) and a small period (about 1-2 nm).

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Determination of Penetration Depth of Transverse Spin Current in Ferromagnetic Metals by Spin Pumping

Spin pumping in nonmagnetic/ferromagnetic metal multilayers is studied both theoretically and experimentally. We show that the line widths of the ferromagnetic resonance (FMR) spectrum depend on the thickness of the ferromagnetic metal layers, which must not be in resonance with the oscillating magnetic field. We also show that the penetration depths of the transverse spin current in ferromagnetic metals can be determined by analyzing the line widths of their FMR spectra. The obtained penetration depths in NiFe, CoFe and CoFeB were 3.7 [nm], 2.5 [nm] and 12.0 [nm], respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

The effect of large quantum fluctuation on the noise of a single-electron transistor

We theoretically investigate the noise of a single-electron transistor in the regime of large quantum fluctuation of charge out of equilibrium. We show that the charge noise is suppressed due to the charge renormalization caused by the quantum fluctuation. However the fluctuation is not strong enough to wash out the charge quantization. We find that the renormalization effect reduces the performance of a single-electron electrometer.

0 citations0 reviewsNo code linkedOpen access