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Researcher profile

Hiroshi Imamura

Hiroshi Imamura contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.chem-phcond-mat.stat-mechphysics.app-phquant-ph

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Published work

21 published item(s)

preprint2022arXiv

Precession dynamics of a small magnet with non-Markovian damping: Theoretical proposal for an experiment to determine the correlation time

Recent advances in experimental techniques have made it possible to manipulate and measure the magnetization dynamics on the femtosecond time scale which is the same order as the correlation time of the bath degrees of freedom. In the equations of motion of magnetization, the correlation of the bath is represented by the non-Markovian damping. For development of the science and technologies based on the ultrafast magnetization dynamics it is important to understand how the magnetization dynamics depend on the correlation time. It is also important to determine the correlation time experimentally. Here we study the precession dynamics of a small magnet with the non-Markovian damping. Extending the theoretical analysis of Miyazaki and Seki [J. Chem. Phys. 108, 7052 (1998)] we obtain analytical expressions of the precession angular velocity and the effective damping constant for any values of the correlation time under assumption of small Gilbert damping constant. We also propose a possible experiment for determination of the correlation time.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Estimation of Rectifying Performance for Terahertz Wave in Newly Designed Fe/ZnO/MgO/Fe Magnetic Tunnel Junction

We fabricated fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with low junction resistance-area products (several $Ω$ $μ$m$^2$) and conducted a theoretical estimation of square-low rectifying performance for a terahertz electromagnetic wave. Effective current responsivity up to 0.09 A/W at 1 THz was obtained under zero-bias voltage condition at room temperature. The result is approximately half the value of the best result obtained for experiments in semiconductor-based diodes, performed under similar conditions. The study strongly suggests that this MTJ system has a great potential for the rectifying element of the terahertz wave.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large angle precession of magnetization maintained by a microwave voltage

Effects of a microwave voltage on magnetization precession are analyzed based on a macrospin model. The microwave voltage induces the oscillating anisotropy field through the voltage controlled magnetic anisotropy (VCMA) effect, and then stimulates the magnetization. The large angle precession is maintained if the magnetization synchronizes with the microwave voltage. The effective equations of motion of the magnetization with an oscillating anisotropy field are derived, and the mechanism of the synchronization is clarified by analyzing the derived equations of motion. The conditions of the angular frequency detuning and the amplitude of the oscillating anisotropy field for synchronization are obtained. The results are useful for development of the VCMA-based energy-efficient spintronics devices using magnetization precession such as a VCMA-based magnetoresistive random access memory and a nano-scale microwave magnetic field generator.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Low power switching of magnetization using enhanced magnetic anisotropy with short-voltage-pulse application

A low power magnetization switching scheme based on the voltage control of magnetic anisotropy (VCMA) is proposed. In contrast to the conventional switching scheme using VCMA, where the magnetic anisotropy is eliminated during the voltage pulse, the magnetic anisotropy is enhanced to induce precession around the axis close to the easy axis. After turning off the voltage proximately at a half of precession period, the magnetization relaxes to the opposite equilibrium direction. We perform numerical simulations and show that the pulse duration of the proposed switching scheme is as short as a few tens of pico seconds. Such a short pulse duration is beneficial for low power consumption because of the reduction of energy loss by Joule heating.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Critical Field of Spin Torque Oscillator with Perpendicularly Magnetized Free Layer

The oscillation properties of a spin torque oscillator consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer are studied based on an analysis of the energy balance between spin torque and damping. The critical value of an external magnetic field applied normal to the film plane is found, below which the controllable range of the oscillation frequency by the current is suppressed. The value of the critical field depends on the magnetic anisotropy, the saturation magnetization, and the spin torque parameter.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Current Dependence of Spin Torque Switching Barrier

The current dependence of the switching barrier for spin torque switching of an in-plane magnetized ferromagnet was studied. Two scaling currents, I_{c}$ and I_{c}^{*}(>I_{c}), were introduced to distinguish the magnetization stability. In the low-current region I<I_{c}, the switching barrier is linear to the current with another scaling current \tilde{I}_{c}, while such linear scaling does not hold in the high-current region I_{c} < I < I_{c}^{*}. The linear scaling is valid for the high temperature and the long current pulse duration time.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Dependence of spin torque diode voltage on applied field direction

The optimum condition of an applied field direction to maximize spin torque diode voltage was theoretically derived for a magnetic tunnel junction with a perpendicularly magnetized free layer and an in-plane magnetized pinned layer. We found that the diode voltage for a relatively small applied field is maximized when the projection of the applied field to the film-plane is parallel or anti-parallel to the magnetization of the pinned layer. However, by increasing the applied field magnitude, the optimum applied field direction shifts from the parallel or anti-parallel direction. These analytical predictions were confirmed by numerical simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Maximizing Spin Torque Diode Voltage by Optimizing Magnetization Alignment

The optimum condition of the magnetization alignment to maximize the spin torque diode voltage is derived by solving the Landau-Lifshitz-Gilbert equation. We show that the optimized diode voltage can be one order of magnitude larger than that of the conventional alignment where the easy axes of the free and the pinned layers are parallel. These analytical predictions are confirmed by numerical simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Penetration of a magnetic wall into thin ferromagnetic electrodes of a nano-contact spin valve

We theoretically analyzed a magnetic wall confined in a nano-contact spin valve paying special attention to the penetration of the magnetic wall into thin ferromagnetic electrodes. We showed that, compared with the Bloch wall, the penetration of the Neel wall is suppressed by increases of the demagnetization energy. We found the optimal conditions of the radius and height of the nano-contact to maximize the power of the current-induced oscillation of the magnetic wall. We also found that the thermal stability of the Bloch wall increases when the nano-contact&#39;s radius increases or height decreases.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin torque switching of an in-plane magnetized system in a thermally activated region

The current dependence of the exponent of the spin torque switching rate of an in-plane magnetized system was investigated by solving the Fokker-Planck equation with low temperature and small damping and current approximations. We derived the analytical expressions of the critical currents, I_{c} and I_{c}^{*}. At I_{c}, the initial state parallel to the easy axis becomes unstable, while at I_{c}^{*} (\simeq 1.27 I_{c}) the switching occurs without the thermal fluctuation. The current dependence of the exponent of the switching rate is well described by (1-I/I_{c}^{*})^{b}, where the value of the exponent b is approximately unity for I < I_{c}, while b rapidly increases up to 2.2 with increasing current for I_{c} < I < I_{c}^{*}. The linear dependence for I < I_{c} agrees with the other works, while the nonlinear dependence for I_{c} < I < I_{c}^{*} was newly found by the present work. The nonlinear dependence is important for analysis of the experimental results, because most experiments are performed in the current region of I_{c} < I < I_{c}^{*}.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Dependence of spin torque switching probability on electric current

Dependence of the thermally assisted spin torque switching probability on the sweep electric current was investigated theoretically. The analytical expressions of the switching times for $b=1$ and $b=2$ are derived based on the rate equation, where $b$ is the exponent of the current term in the switching rate. The switching current is approximately proportional to the temperature $T$ and the logarithm of the sweep rate $v$ for both $b=1$ and $b=2$ in the experimentally performed ranges of $T$ and $v$. Experiments in very low temperature range are required to determine the exponent $b$.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Numerical Study on Spin Torque Switching in Thermally Activated Region

We studied the spin torque switching of the single free layer in the thermally activated region by numerically solving the Landau-Lifshitz-Gilbert equation. We found that the temperature dependence of the switching time of the in-plane magnetized system is nonlinear, which means $b \neq 1$. Here, $b$ is the exponent of the current term in the switching rate formula and has been widely assumed to be unity. This result enables us to evaluate the thermal stability of spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Proposal of an experimental scheme for determination of penetration depth of transverse spin current by a nonlocal spin valve

We theoretically propose an experiment to determine the penetration depth of a transverse spin current using a nonlocal spin valve with three ferromagnetic (F) layers, where the F_1, F_2, and F_3 layers act as the spin injector, detector, and absorber, respectively. We show that the penetration depth can be evaluated by measuring the dependence of the spin signal (magnetoresistance) on the thickness of the F_3 layer.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Theory of Spin Torque Assisted Thermal Switching of Single Free Layer

The spin torque assisted thermal switching of the single free layer was studied theoretically. Based on the rate equation, we derived the theoretical formulas of the most likely and mean switching currents of the sweep current assisted magnetization switching, and found that the value of the exponent $b$ in the switching rate formula significantly affects the estimation of the retention time of magnetic random access memory. Based on the Fokker-Planck approach, we also showed that the value of $b$ should be two, not unity as argued in the previous works.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thermal switching rate of a ferromagnetic material with uniaxial anisotropy

The field dependence of the thermal switching rate of a ferromagnetic material with uniaxial anisotropy was studied by solving the Fokker-Planck equation. We derived the analytical expression of the thermal switching rate using the mean first-passage time approach, and found that Brown&#39;s formula [Phys. Rev. 130, 1677 (1963)] is applicable even in the low barrier limit by replacing the attempt frequency with the proper factor which is expressed by the error function.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Edge States and Stacking Effects in Nanographene Systems

Bilayer graphene nanoribbon with zigzag edge is investigated with the tight binding model. Two stacking structures, alpha and beta, are considered. The band splitting is seen in the alpha structure, while the splitting in the wave number direction is found in the beta structure. The local density of states in the beta structure tend to avoid sites where inter-layer hopping interactions are present.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electron density distribution of bilayer nanographene and band structures of boron-carbon-nitride systems

Bilayer graphene nanoribbon with zigzag edge is investigated with the tight binding model. Two stacking structures, alpha and beta, are considered. The band splitting is seen in the alpha structure, while the splitting in the wave number direction is found in the beta structure. The local density of states in the beta structure tend to avoid sites where interlayer hopping interactions are present. The calculation is extended to the boron-carbon-nitride systems. The qualitative properties persist when zigzag edge atoms are replaced with borons and nitrogens.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Minimization of the Switching Time of a Synthetic Free Layer in Thermally Assisted Spin Torque Switching

We theoretically studied the thermally assisted spin torque switching of a synthetic free layer and showed that the switching time is minimized if the condition H_J=|H_s|/(2 alpha) is satisfied, where H_J, H_s and alpha are the coupling field of two ferromagnetic layers, the amplitude of the spin torque, and the Gilbert damping constant. We also showed that the coupling field of the synthetic free layer can be determined from the resonance frequencies of the spin-torque diode effect.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Thermally assisted spin transfer torque switching in synthetic free layers

We studied the magnetization reversal rates of thermally assisted spin transfer torque switching in a ferromagnetically coupled synthetic free layer theoretically. By solving the Fokker-Planck equation, we obtained the analytical expression of the switching probability for both the weak and the strong coupling limit. We found that the thermal stability is proportional to Delta_{0}(1-I/I_{c})^{2}, not Delta_{0}(1-I/I_{c}) argued by Koch et al. [Phys. Rev. Lett. 92, 088302 (2004)], where I and I_{c} are the electric current and the critical current of spin transfer torque switching at absolute zero temperature. The difference in the exponent of (1-I/I_{c}) leads to a significant underestimation of the thermal stability Delta_{0}. We also found that fast switching is achieved by choosing the appropriate direction of the applied field.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Proposal of a full Bell state analyzer for spin qubits in a double quantum dot

We propose a scheme for full Bell state measurement of spin qubits in a double quantum dot. Our scheme consists of Pauli spin-blockade measurements and biaxial electron-spin resonance. In order to eliminate the average of the Zeeman fields, the double quantum dot is designed so that the Landé g-factors of first and second dots satisfy g1=g2 with the use of g-factor engineering. Thus, we can swap one of the three spin-triplet states for the spin-singlet state without disturbing the other states. Our study shows that the sequential spin-to-charge conversions enable us to implement the full Bell state measurement of electron-spin qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Boltzmann theory of magnetoresistance due to a spin spiral

We studied the magnetoresistance due to a spin spiral by solving the Boltzmann equation. The scattering rates of conduction electrons are calculated by using the non-perturbative wave function of the conduction electrons and the non-equilibrium distribution function is obtained by numerically solving the Boltzmann equation. These enable us to calculate the resistivity of a sufficiently thin spin spiral. A magnetoresistance ratio of more than 50% is predicted for a spin spiral with high spin polarization (>0.8) and a small period (about 1-2 nm).

0 citations0 reviewsNo code linkedOpen access