Source author record

Hironobu Makitsubo

Hironobu Makitsubo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2016arXiv

Fabrication and Analysis of Three-Layer All-Silicon Interference Optical Filter with Sub-Wavelength Structure toward High Performance Terahertz Optics

We propose an all-silicon multi-layer interference filter composed solely of silicon with sub-wavelength structure (SWS) in order to realize high performance optical filters operating in the THz frequency region with robustness against cryogenic thermal cycling and mechanical damage. We demonstrate fabrication of a three-layer prototype using well-established common micro-electro-mechanical systems (MEMS) technologies as a first step toward developing practical filters. The measured transmittance of the three-layer filter agrees well with the theoretical transmittances calculated by a simple thin-film calculation with effective refractive indices as well as a rigorous coupled-wave analysis simulation. We experimentally show that SWS layers can work as homogeneous thin-film interference layers with effective refractive indices even if there are multiple SWS layers in a filter.

preprint2012arXiv

Molecular-beam epitaxial growth of a far-infrared transparent electrode for extrinsic Germanium photoconductors

We have evaluated the optical and electrical properties of a far-infrared (IR) transparent electrode for extrinsic germanium (Ge) photoconductors at 4 K, which was fabricated by molecular beam epitaxy (MBE). As a far-IR transparent electrode, an aluminum (Al)-doped Ge layer is formed at well-optimized doping concentration and layer thickness in terms of the three requirements: high far-IR transmittance, low resistivity, and excellent ohmic contact. The Al-doped Ge layer has the far-IR transmittance of >95 % within the wavelength range of 40--200 microns, while low resistivity (~5 ohm-cm) and ohmic contact are ensured at 4 K. We demonstrate the applicability of the MBE technology in fabricating the far-IR transparent electrode satisfying the above requirements.