Source author record

Hideki Yamamoto

Hideki Yamamoto appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

10works
4topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

10 published item(s)

preprint2022arXiv

Bayesian optimization with experimental failure for high-throughput materials growth

A crucial problem in achieving innovative high-throughput materials growth with machine learning and automation techniques, such as Bayesian optimization (BO) and robotic experimentation, has been a lack of an appropriate way to handle missing data due to experimental failures. Here, we propose a new BO algorithm that complements the missing data in the optimization of materials growth parameters. The proposed method provides a flexible optimization algorithm capable of searching a wide multi-dimensional parameter space. We demonstrate the effectiveness of the method with simulated data as well as in its implementation for actual materials growth, namely machine-learning-assisted molecular beam epitaxy (ML-MBE) of SrRuO3, which is widely used as a metallic electrode in oxide electronics. Through the exploitation and exploration in a wide three-dimensional parameter space, while complementing the missing data, we attained tensile-strained SrRuO3 film with a high residual resistivity ratio of 80.1, the highest among tensile-strained SrRuO3 films ever reported, in only 35 MBE growth runs.

preprint2022arXiv

Isotropic orbital magnetic moments in magnetically anisotropic SrRuO3 films

Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate the anisotropy of the Ru 4d and O 2p electronic structure and magnetic properties using high-quality epitaxially strained (compressive and tensile) SrRuO3 films grown by machine-learning-assisted molecular beam epitaxy. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements. The magnetization curves for the Ru 4d and O 2p magnetic moments are identical, irrespective of the strain type, indicating the strong magnetic coupling between the Ru and O ions. The electronic structure and the orbital magnetic moment relative to the spin magnetic moment are isotropic despite the perpendicular and in-plane magnetic anisotropy in the compressive-strained and tensile-strained SrRuO3 films; i.e., the orbital magnetic moments have a negligibly small contribution to the magnetic anisotropy. This result contradicts Bruno model, where magnetic anisotropy arises from the difference in the orbital magnetic moment between the perpendicular and in-plane directions. Contributions of strain-induced electric quadrupole moments to the magnetic anisotropy are discussed, too.

preprint2021arXiv

Wide-range epitaxial strain control of electrical and magnetic properties in high-quality SrRuO3 films

Epitaxial strain in 4d ferromagnet SrRuO3 films is directly linked to the physical properties through the strong coupling between lattices, electrons, and spins. It provides an excellent opportunity to tune the functionalities of SrRuO3 in electronic and spintronic devices. However, a thorough understanding of the epitaxial strain effect in SrRuO3 has remained elusive due to the lack of systematic studies. This study demonstrates wide-range epitaxial strain control of electrical and magnetic properties in high-quality SrRuO3 films. The epitaxial strain was imposed by cubic or pseudocubic perovskite substrates having a lattice mismatch of -1.6 to 2.3% with reference to bulk SrRuO3. The Poisson ratio, which describes the two orthogonal distortions due to the substrate clamping effect, is estimated to be 0.33. The Curie temperature (TC) and residual resistivity ratios of the series of films are higher than or comparable to the highest reported values for SrRuO3 on each substrate, confirming the high crystalline quality of the films. A TC of 169 K is achieved in a tensile-strained SrRuO3 film on the DyScO3 (110) substrate, which is the highest value ever reported for SrRuO3. The TC (146-169 K), magnetic anisotropy (perpendicular or in-plane magnetic easy axis), and metallic conduction (residual resistivity at 2 K of 2.10 - 373 μΩcm) of SrRuO3 are widely controlled by epitaxial strain. These results provide guidelines to design SrRuO3-based heterostructures for device applications.

preprint2016arXiv

Determination of intrinsic lifetime of edge magnetoplasmons

It is known that peculiar plasmons whose frequencies are purely imaginary exist in the interior of a two-dimensional electronic system described by the Drude model. We show that when an external magnetic field is applied to the system, these bulk plasmons are still non-oscillating and are isolated from the magnetoplasmons by the energy gap of the cyclotron frequency. These are mainly in a transverse magnetic mode and can combine with a transverse electronic mode locally at an edge of the system to form edge magnetoplasmons. With this observation, we reveal the intrinsic long lifetime of edge magnetoplasmons for the first time.

preprint2016arXiv

Evaluation of Disorder Introduced by Electrolyte Gating through Transport Measurements in Graphene

We evaluate the degree of disorder in electrolyte gating devices through the transport measurements in graphene. By comparing the mobility in ion- and standard metal-gated devices, we show that the deposition of the ionic liquid introduces charged impurities with a density of approximately $6\times 10^{12}$ cm$^{-2}$; setting the upper limit of the mobility in graphene to 3000 cm$^2$/Vs. At higher temperature, phonons in the ionic liquid further reduce the mobility, making its upper limit 2000 cm$^2$/Vs at room temperature. Since the degree of disorder is independent of the base material, these results are valuable towards understanding disorder effects in general devices using electrolyte gating.

preprint2016arXiv

Shubnikov-de Haas quantum oscilations reveal a reconstructed Fermi surface near optimal doping in a thin film of the cuprate superconductor Pr$_{1.86}$Ce$_{0.14}$CuO$_{4\pmδ}$

We study magnetotransport properties of the electron-doped superconductor Pr$_{2-x}$Ce$_x$CuO$_{4\pmδ}$ with $x$ = 0.14 in magnetic fields up to 92~T, and observe Shubnikov de-Haas magnetic quantum oscillations. The oscillations display a single frequency $F$=255$\pm$10~T, indicating a small Fermi pocket that is $\sim$~1\% of the two-dimensional Brillouin zone and consistent with a Fermi surface reconstructed from the large hole-like cylinder predicted for these layered materials. Despite the low nominal doping, all electronic properties including the effective mass and Hall effect are consistent with overdoped compounds. Our study demonstrates that the exceptional chemical control afforded by high quality thin films will enable Fermi surface studies deep into the overdoped cuprate phase diagram.

preprint2016arXiv

Theory of intraband plasmons in doped carbon nanotubes: rolled surface-plasmons of graphene

A single-wall carbon nanotube possesses two different types of plasmons specified by the wavenumbers in the azimuthal and axial directions. The azimuthal plasmon that is caused by interband transitions has been studied, while the effect of charge doping is unknown. In this paper, we show that when nanotubes are heavily doped, intraband transitions cause the azimuthal plasmons to appear as a plasmon resonance in the near-infrared region of the absorption spectra, which is absent for light doping due to the screening effect. The axial plasmons that are inherent in the cylindrical waveguide structures of nanotubes, account for the absorption peak of the metallic nanotube observed in the terahertz region. The excitation of axial (azimuthal) plasmons requires a linearly polarized light parallel (perpendicular) to the tube's axis.

preprint2008arXiv

Generic phase diagram of "electron-doped" T' cuprates

We investigated the generic phase diagram of the electron doped superconductor, Nd2-xCexCuO4, using films prepared by metal organic decomposition. After careful oxygen reduction treatment to remove interstitial Oap atoms, we found that the Tc increases monotonically from 24 K to 29 K with decreasing x from 0.15 to 0.00, demonstrating a quite different phase diagram from the previous bulk one. The implication of our results is discussed on the basis of tremendous influence of Oap "impurities" on superconductivity and also magnetism in T' cuprates. Then we conclude that our result represents the generic phase diagram for oxygen-stoichiometric Nd2-xCexCuO4.

preprint2008arXiv

Reduction dependence of superconductivity in undoped T' cuprates

We have recently achieved superconductivity in undoped T'-RE2CuO4 (RE: Pr, Nd, Sm, Eu, and Gd), using epitaxial thin films by metal organic decomposition. The key recipes to achieve superconductivity are low-PO2 firing and subsequent vacuum reduction to minimize the amount of impurity oxygen atoms, which are very harmful to high-Tc superconductivity. In this article, we report our investigation on the reduction dependence of superconductivity of T'-RE2CuO4. For thin films, the amount of remnant Oap atoms is difficult to evaluate but we propose that one good measure for this may be the c-axis lattice constant, which tells us whether the reduction is insufficient or excessive.

preprint2008arXiv

Superconductivity in undoped T' cuprates with Tc over 30 K

Undoped cuprates have long been considered to be antiferromagnetic insulators. In this article, however, we report that superconductivity is achieved in undoped T'-RE2CuO4 (RE = Pr, Nd, Sm, Eu, and Gd). Our discovery was performed by using metal-organic decomposition (MOD), an inexpensive and easy-to-implement thin-film process. The keys to prepare the superconducting films are firing with low partial-pressure of oxygen and reduction at low temperatures. The highest Tc of undoped T'-RE2CuO4 is over 30 K, substantially higher than "electron-doped" analogs. Remarkably, Gd2CuO4, even the derivatives of which have not shown superconductivity so far, gets superconducting with Tconset as high as ~ 20 K. The implication of our discovery is briefly discussed.