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Researcher profile

Henning Sirringhaus

Henning Sirringhaus contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phcond-mat.mes-hallphysics.opticsquant-ph

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Published work

4 published item(s)

preprint2022arXiv

Charge Transport in Mixed Metal Halide Perovskite Semiconductors

Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the presence of methylammonium in many high performing 3D perovskite compositions introduces additional instabilities, which limit reliable room temperature optoelectronic device operation. Here, we address both these challenges and demonstrate that field-effect transistors (FETs) based on methylammonium-free, mixed-metal (Pb/Sn) perovskite compositions, that are widely studied for solar cell and light-emitting diode applications, do not suffer from ion migration effects as their pure Pb counterparts and reliably exhibit hysteresis free p-type transport with high mobility reaching 5.4 $cm^2/Vs$, ON/OFF ratio approaching $10^6$, and normalized channel conductance of 3 S/m. The reduced ion migration is also manifested in an activated temperature dependence of the field-effect mobility with low activation energy, which reflects a significant density of shallow electronic defects. We visualize the suppressed in-plane ionic migration in Sn-containing perovskites compared to their pure-Pb counterparts using photoluminescence microscopy under bias and demonstrate promising voltage and current-stress device operational stabilities. Our work establishes FETs as an excellent platform for providing fundamental insights into the doping, defect and charge transport physics of mixed-metal halide perovskite semiconductors to advance their applications in optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride

Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from previously identified carbon-related defects in 2d hexagonal boron nitride (hBN). We show that single-defect ODMR contrast can be as strong as 6% and displays a magnetic-field dependence with both positive or negative sign per defect. This bipolarity can shed light into low contrast reported recently for ensemble ODMR measurements for these defects. Further, the ODMR lineshape comprises a doublet resonance, suggesting either low zero-field splitting or hyperfine coupling. Our results offer a promising route towards realising a room-temperature spin-photon quantum interface in hexagonal boron nitride.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Structural and dynamic disorder, not ionic trapping, controls charge transport in highly doped conducting polymers

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trapping by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study rebutting this belief. Using a newly developed doping technique, we find the conductivity of several classes of high-mobility conjugated polymers to be strongly correlated with paracrystalline disorder but poorly correlated with ionic size, suggesting that Coulomb traps do not limit transport. A general model for interacting electrons in highly doped polymers is proposed and carefully parameterized against atomistic calculations, enabling the calculation of electrical conductivity within the framework of transient localisation theory. Theoretical calculations are in excellent agreement with experimental data, providing insights into the disordered-limited nature of charge transport and suggesting new strategies to further improve conductivities.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tuning Spin Current Injection at Ferromagnet/Non-Magnet Interfaces by Molecular Design

There is a growing interest in utilizing the distinctive material properties of organic semiconductors for spintronic applications. Here, we explore injection of pure spin current from Permalloy into a small molecule system based on dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) at ferromagnetic resonance. The unique tunability of organic materials by molecular design allows us to study the impact of interfacial properties on the spin injection efficiency systematically. We show that both, spin injection efficiency at the interface as well as the spin diffusion length can be tuned sensitively by the interfacial molecular structure and side chain substitution of the molecule.

0 citations0 reviewsNo code linkedOpen access