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Helmut Soltner

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Published work

2 published item(s)

preprint2020arXiv

Development of a multi-channel power supply for silicon photo-multipliers used with inorganic scintillators

The motivation of the current R&D project is based upon the requirements of the JEDI international collaboration aiming to measure Electric Dipole Moments (EDMs) of charged particles in storage rings. One of the most important elements of such an experiment will be a specially designed polarimeter with the detection system based on a modular inorganic scintillator (LYSO crystal) calorimeter. The calorimeter modules are read out by Silicon Photo Multipliers (SiPMs). This paper describes the development of a multi-channel power supply for the polarimeter modules, providing very stable and clean bias voltages for SiPMs. In order to ensure the best possible performance of SiPMs in conjunction with the crystal-based calorimeter modules and to guarantee the required level of calorimeter stability, several quality requirements have to be met by the power supply. Additionally, it is required to provide features including remote control via the network, ramping of the output voltage, measuring and sending the information about its output voltages and currents, etc. The obtained results demonstrate that the goals for the JEDI polarimeter are met. The developed hardware will be useful in other fields of fundamental and applied research, medical diagnostic techniques and industry, where SiPMs are used.

preprint2015arXiv

Surface and Step Conductivities on Si(111) Surfaces

Four-point measurements using a multi-tip scanning tunneling microscope (STM) are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from non-surface contributions. A termination of the Si(111) surface with either Bi or H results in the two limiting cases of a pure 2D or 3D conductance, respectively. In order to further disentangle the surface conductivity of the step-free surface from the contribution due to atomic steps, a square four-probe configuration is applied as function of the rotation angle. In total this combined approach leads to an atomic step conductivity of $σ_\mathrm{step} = (29 \pm 9)$ $\mathrmΩ^{-1} \mathrm{m}^{-1}$ and to a step-free surface conductivity of $σ_\mathrm{surf} = (9 \pm 2) \cdot 10^{-6}\,\mathrmΩ^{-1}/\square$ for the Si(111)-(7$\times$7) surface.