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Heinz Graafsma

Heinz Graafsma contributes to research discovery and scholarly infrastructure.

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preprint2014arXiv

Optimization of radiation hardness and charge collection of edgeless silicon pixel sensors for photon science

Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in successful productions of ATLAS and Medipix-based silicon pixel sensors by a few foundries. However, the drawbacks of edgeless sensors are poor radiation hardness for ionizing radiation and non-uniform charge collection by edge pixels. In this work, the radiation hardness of edgeless sensors with different polarities has been investigated using Synopsys TCAD with X-ray radiation-damage parameters implemented. Results show that if no conventional guard ring is present, none of the current designs are able to achieve a high breakdown voltage (typically < 30 V) after irradiation to a dose of ~10 MGy. In addition, a charge-collection model has been developed and was used to calculate the charges collected by the edge pixels of edgeless sensors when illuminated with X-rays. The model takes into account the electric field distribution inside the pixel sensor, the absorption of X-rays, drift and diffusion of electrons and holes, charge sharing effect, and threshold settings in ASICs. It is found that the non-uniform charge collection of edge pixels is caused by the strong bending of electric field and the non-uniformity depends on bias voltage, sensor thickness and distance from active edge to the last pixel ("edge space"). In particular, the last few pixels close to the active edge of the sensor are not sensitive to low-energy X-rays (< 10 keV) especially for sensors with thicker Si and smaller edge space. The results from the model calculation have been compared to measurements and good agreement was obtained. The model has been used to optimize the edge design.

preprint2013arXiv

Study of X-ray radiation damage in the AGIPD sensor for the European XFEL

The European X-ray Free Electron Laser (XFEL), currently being constructed in Hamburg and planning to be operational in 2017 for users, will deliver 27,000 fully coherent, high brilliance X-ray pulses per second with duration less than 100 fs. The unique features of the X-ray beam pose major challenges for detectors used at the European XFEL for imaging experiments, in particular a radiation tolerance of silicon sensors for doses up to 1 GGy for 3 years of operation at an operating voltage above 500 V. One of the detectors under development at the European XFEL is the Adaptive Gain Integrating Pixel Detector (AGIPD), which is a hybrid detector system with ASICs bump-bonded to p+n silicon pixel sensors. We have designed the silicon sensors for the AGIPD, which have been fabricated by SINTEF and delivered in the beginning of February of 2013. To demonstrate the performance of the AGIPD sensor with regard to radiation hardness, mini-sensors with the same pixel and guard-ring designs as the AGIPD together with test structures have been irradiated at the beamline P11 of PETRA III with 8 keV and 12 keV monoenergetic X-rays to dose values up to 10 MGy. The radiation hardness of the AGIPD sensor has been proven and all electrical properties are within specification before and after irradiation. In addition, the oxide-charge density and surface-current density from test structures have been characterized as function of the X-ray dose and compared to previous measurements for test structures produced by four vendors.

preprint2012arXiv

The single photon sensitivity of the Adaptive Gain Integrating Pixel Detector

Single photon sensitivity is an important property of certain detection systems. This work investigated the single photon sensitivity of the Adaptive Gain Integrating Pixel Detector (AGIPD) and its dependence on possible detector noise values. Due to special requirements at the European X-ray Free Electron Laser (XFEL) the AGIPD finds the number of photons absorbed in each pixel by integrating the total signal. Photon counting is done off line on a thresholded data set. It was shown that AGIPD will be sensitive to single photons of 8 keV energy or more (detection efficiency $\gg$ 50%, less than 1 count due to noise per 10$^6$ pixels). Should the final noise be at the lower end of the possible range (200 - 400 electrons) single photon sensitivity can also be achieved at 5 keV beam energy. It was shown that charge summing schemes are beneficial when the noise is sufficiently low. The total detection rate of events is increased and the probability to count a single event multiple times in adjacent pixels is reduced by a factor of up to 40. The entry window of AGIPD allows 3 keV photons to reach the sensitive volume with approximately 70% probability. Therefore the low energy performance of AGIPD was explored, finding a maximum noise floor below 0.035 hits/pixel/frame at 3 keV beam energy. Depending on the noise level and selected threshold this value can be reduced by a factor of approximately 10. Even though single photon sensitivity, as defined in this work, is not given, imaging at this energy is still possible, allowing Poisson noise limited performance for signals significantly above the noise floor.

preprint2011arXiv

Simulation study of the impact of AGIPD design choices on X-ray Photon Correlation Spectroscopy utilizing the intensity autocorrelation technique

The European XFEL, currently under construction, will produce a coherent X-ray pulse every 222 ns in pulse trains of up to 2700 pulses. In conjunction with the fast 2D area detectors currently under development, it will be possible to perform X-ray Photon Correlation Spectroscopy (XPCS) experiments on sub-microsecond timescales with non-ergodic systems. A case study for the Adaptive Gain Integrating Pixel Detector (AGIPD) at the European XFEL employing the intensity autocorrelation technique was performed using the detector simulation tool HORUS. As optimum results from XPCS experiments are obtained when the pixel size approximates the (small) speckle size, the presented study compares the AGIPD (pixel size of (200 $\upmu$m)$^2$) to a possible apertured version of the detector and to a hypothetical system with (100 $\upmu$m)$^2$ pixel size and investigates the influence of intensity fluctuations and incoherent noise on the quality of the acquired data. The intuitive conclusion that aperturing is not beneficial as data is 'thrown away' was proven to be correct for low intensities. For intensities larger than approximately 1 photon per (100 $\upmu$m)$^2$ aperturing was found to be beneficial, as charge sharing effects were excluded by it. It was shown that for the investigated case (100 $\upmu$m)$^2$ pixels produced significantly better results than (200 $\upmu$m)$^2$ pixels when the average intensity exceeded approximately 0.05 photons per (100 $\upmu$m)$^2$. Although the systems were quite different in design they varied in the signal to noise ratio only by a factor of 2-3, and even less in the relative error of the extracted correlation constants. However the dependence on intensity showed distinctively different features for the different systems.