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Heiko B. Weber

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cond-mat.mes-hall cond-mat.mtrl-sci physics.optics physics.app-ph physics.ed-ph quant-ph

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preprint2022arXiv

Datenkompetenz im Physikstudium -- ein Erfahrungsbericht

Do our physics curricula provide the appropriate data management competences in a world where data are considered a crucial resource and substantial funding is available for building a national research data infrastructure (German: Nationale Forschungsdateninfrastuktur = NFDI)? Although basic data evaluation and systematic documentation are practiced when students first come into contact with data, particularly in experimental physics lab courses, they do not meet the increasing demands of research and professional practice to deal with the analysis of huge datasets. In many cases, the problem starts with the fact that there is no consensus on a suitable entry-level programming language. At the Department of Physics at Friedrich-Alexander-Universität Erlangen-Nürnberg, we have made minor adjustments to the physics curriculum in recent years, which we present in this article. We placed data management competences early in the bachelor curriculum, which has resulted in considerable advantages throughout the further course of studies. The authors feel that students are quickly moving into the fast lane in data management; we can already see in our research groups that they are becoming a driving force towards modern research data management. -- Vermitteln unsere Physikcurricula die passenden Datenverarbeitungskompetenzen in einer Welt, in der Daten als entscheidende Ressource betrachtet werden und erhebliche Fördermittel für eine Nationale Forschungsdateninfrastruktur (NFDI) bereitstehen? Beim Erstkontakt mit Daten, also insbesondere in den Praktika der Experimentalphysik, werden zwar elementare Datenevaluation und systematische Dokumentation eingeübt, diese genügen aber nicht den steigenden Ansprüchen der Forschung und der Berufspraxis, sich zunehmend mit der Analyse großer Datenmengen zu befassen. Es scheitert oft schon an einem Konsens über eine geeignete Einstiegsprogrammiersprache. Am Department Physik der Friedrich-Alexander-Universität Erlangen-Nürnberg haben wir in den letzten Jahren kleinere Anpassungen im Physikcurriculum vorgenommen, die wir in diesem Artikel vorstellen. Datenkompetenz wurde früh im Bachelorstudium platziert, woraus sich erhebliche Vorteile für den weiteren Studienverlauf ergeben haben. Die Autoren können sich des Eindrucks nicht erwehren, dass die Studierenden in puncto Datenkompetenz schnell auf die Überholspur gehen; wir sehen bereits jetzt in unseren Arbeitsgruppen, dass sie sich als treibende Kräfte hin zu einem modernen Forschungsdatenmanagement erweisen.

preprint2022arXiv

Light-field control of real and virtual charge carriers

Light-driven electronic excitation is a cornerstone for energy and information transfer. In the interaction of intense and ultrafast light fields with solids, electrons may be excited irreversibly, or transiently during illumination only. As the transient electron population cannot be observed after the light pulse is gone it is referred to as virtual, while the population remaining excited is called real. Virtual charge carriers have recently been associated with high-harmonic generation and transient absorption, while photocurrent generation may stem from real as well as virtual charge carriers. Yet, a link between the carrier types in their generation and importance for observables up to technological relevance is missing. Here we show that real and virtual carriers can be excited and disentangled in the optical generation of currents in a gold-graphene-gold heterostructure using few-cycle laser pulses. Depending on the waveform used for photoexcitation, real carriers receive net momentum and propagate to the gold electrodes, while virtual carriers generate a polarization response read out at the gold-graphene interfaces. Based on these insights, we further demonstrate a proof of concept of a logic gate for future lightwave electronics. Our results offer a direct means to monitor and excite real and virtual charge carriers. Individual control over each type will dramatically increase the integrated circuit design space and bring closer to reality petahertz signal processing.

preprint2021arXiv

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing application complexity requires entangling multiple individual systems, e.g. via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centres in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of $\approx 0.43\,\rm μm^{-3}$. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited linewidth. Moreover, we identify emitters with overlapping emission profiles within diffraction limited excitation spots, for which we introduce simplified schemes for generation of computationally-relevant Greenberger-Horne-Zeilinger (GHZ) and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications.

preprint2020arXiv

Attosecond-fast internal photoemission

The photoelectric effect has a sister process relevant in optoelectronics called internal photoemission. Here an electron is photoemitted from a metal into a semiconductor. While the photoelectric effect takes place within less than 100 attoseconds, the attosecond time scale has so far not been measured for internal photoemission. Based on the new method CHArge transfer time MEasurement via Laser pulse duration-dependent saturation fluEnce determinatiON, CHAMELEON, we show that the atomically thin semi-metal graphene coupled to bulk silicon carbide, forming a Schottky junction, allows charge transfer times as fast as (300 $\pm$ 200) attoseconds. These results are supported by a simple quantum mechanical model simulation. With the obtained cut-off bandwidth of 3.3 PHz for the charge transfer rate, this semimetal-semiconductor interface represents the first functional solid-state interface offering the speed and design space required for future light-wave signal processing.

preprint2020arXiv

Thermoelectricity of near-resonant tunnel junctions and their near-Carnot efficiency

The resonant tunneling model is the simplest model for describing electronic transport through nanoscale objects like individual molecules. A complete understanding includes not only charge transport but also thermal transport and their intricate interplay. Key linear response observables are the electrical conductance G and the Seebeck coefficient S. Here we present experiments on unspecified resonant tunnel junctions and molecular junctions that uncover correlations between $G$ and $S$, in particular rigid boundaries for $S(G)$. We find that these correlations can be consistently understood by the single-level resonant tunneling model, with excellent match to experiments. In this framework, measuring $I(V)$ and $S$ for a given junction provides access to the full thermoelectric characterization of the electronic system. A remarkable result is that without targeted chemical design, molecular junctions can expose thermoelectric conversion efficiencies which are close to the Carnot limit. This insight allows to provide design rules for optimized thermoelectric efficiency.

preprint2013arXiv

The detection of Kondo effect in the resistivity of graphene: artifacts and strategies

We discuss the difficulties to discover Kondo effect in the resistivity of graphene. Similarly to the Kondo effect, electron-electron interaction effects and weak localization appear as logarithmic corrections to the resistance. In order to disentangle these contributions, a refined analysis of the magnetoconductance and the magnetoresistance is introduced. We present numerical simulations which display the discrimination of both effects. Further, we present experimental data of magnetotransport. When magnetic molecules are added to graphene, a logarithmic correction to the conductance occurs, which apparently suggests Kondo physics. Our thorough evaluation scheme, however, reveals that this interpretation is not conclusive: the data can equally be explained by electron-electron interaction corrections in an inhomogeneous sample. Our evaluation scheme paves the way for a more refined search for the Kondo effect in graphene.

preprint2012arXiv

Experimental Evidence for Quantum Interference and Vibrationally Induced Decoherence in Single-Molecule Junctions

We analyze quantum interference and decoherence effects in single-molecule junctions both experimentally and theoretically by means of the mechanically controlled break junction technique and density-functional theory. We consider the case where interference is provided by overlapping quasi-degenerate states. Decoherence mechanisms arising from the electronic-vibrational coupling strongly affect the electrical current flowing through a single-molecule contact and can be controlled by temperature variation. Our findings underline the all-important relevance of vibrations for understanding charge transport through molecular junctions.

preprint2012arXiv

Manifestation of electron-electron interaction in the magnetoresistance of graphene

We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization the observed temperature-dependent parabolic magnetoresistivity (MR) is a manifestation of the electron-electron interaction (EEI). We can consistently describe the data with a model for diffusive (magneto)transport that also includes magnetic-field dependent effects originating from ballistic time scales. We find an excellent agreement between the experimentally observed temperature dependence of MR and the theory of EEI in the diffusive regime. We can further assign a temperature-driven crossover to the reduction of the multiplet modes contributing to EEI from 7 to 3 due to intervalley scattering. In addition, we find a temperature independent ballistic contribution to the MR in classically strong magnetic fields.

preprint2011arXiv

Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide

We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard semiconductor technology. We have optimized samples for room temperature as well as for cryogenic temperature operation. Depending on implantation dose and temperature we operate in two gating regimes. In the first, the gating mechanism is similar to a MOSFET, the second is based on a tuned space charge region of the silicon carbide semiconductor. We present a detailed model that describes the two gating regimes and the transition in between.

preprint2010arXiv

Resonant vibrations, peak broadening and noise in single molecule contacts: beyond the resonant tunnelling picture

We carry out experiments on single-molecule junctions at low temperatures, using the mechanically controlled break junction technique. Analyzing the results received with more than ten different molecules the nature of the first peak in the differential conductance spectra is elucidated. We observe an electronic transition with a vibronic fine structure, which is most frequently smeared out and forms a broad peak. In the usual parameter range we find strong indications that additionally fluctuations become active even at low temperatures. We conclude that the electrical field feeds instabilities, which are triggered by the onset of current. This is underscored by noise measurements that show strong anomalies at the onset of charge transport.

preprint2009arXiv

How Graphene-like is Epitaxial Graphene? \\Quantum Oscillations and Quantum Hall Effect

We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size and a Shubnikov-de Haas effect with a Landau level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially, and the graphene-like quantum Hall effect occurs. This proves that epitaxial graphene is ruled by the same pseudo-relativistic physics observed previously in exfoliated graphene.