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Hasnain Ahmad

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Published work

4 published item(s)

preprint2018arXiv

Energy-efficient switching of nanomagnets for computing: Straintronics and other methodologies

The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate "switches" that dissipate miniscule amounts of energy when they switch and provide additional functionality that are beneficial for information processing. An interesting idea that has emerged recently is the notion of using two-phase (piezoelectric/magnetostrictive) multiferroic nanomagnets with bistable (or multi-stable) magnetization states to encode digital information (bits), and switching the magnetization between these states with small voltages (that strain the nanomagnets) to carry out digital information processing. The switching delay is ~1 ns and the energy dissipated in the switching operation can be few to tens of aJ, which is comparable to, or smaller than, the energy dissipated in switching a modern-day transistor. Unlike a transistor, a nanomagnet is "non-volatile", so a nanomagnetic processing unit can store the result of a computation locally without refresh cycles, thereby allowing it to double as both logic and memory. These dual-role elements promise new, robust, energy-efficient, high-speed computing and signal processing architectures (usually non-Boolean and often non-von-Neumann) that can be more powerful, architecturally superior (fewer circuit elements needed to implement a given function) and sometimes faster than their traditional transistor-based counterparts. This topical review covers the important advances in computing and information processing with nanomagnets with emphasis on strain-switched multiferroic nanomagnets acting as non-volatile and energy-efficient switches - a field known as "straintronics". It also outlines key challenges in straintronics.

preprint2015arXiv

Electric field control of magnetic states in isolated and dipole-coupled FeGa nanomagnets delineated on a PMN-PT substrate

We report observation of a "non-volatile" converse magneto-electric effect in elliptical FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. The nanomagnets are initially magnetized with a magnetic field directed along their nominal major axis and subsequent application of an electric field across the substrate generates strain in the substrate, which is partially transferred to the nanomagnets and rotates the magnetizations of some of them to metastable orientations. There they remain after the field is removed, resulting in "non-volatility". In isolated nanomagnets, the angular separation between the initial and final magnetization directions is < 90 deg, but in a dipole-coupled pair consisting of one "hard" and one "soft" nanomagnet, the soft nanomagnet's magnetization is rotated by > 90 deg from the initial orientation because of the dipole influence of the hard nanomagnet. These effects can be utilized for ultra-energy-efficient logic and memory devices.

preprint2015arXiv

Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, straintronic memory cell for extremely low energy operation

Reversible straintronic switching of a nanomagnet's magnetization between two stable or metastable states promises ultra-energy-efficient non-volatile memory. Here, we report strain-induced magnetization switching in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state, resulting in "non-toggle" switching. The two states can encode the two binary bits, and, using the right voltage polarity, one can write either bit deterministically.

preprint2014arXiv

Coherent spin transport and suppression of spin relaxation in InSb nanowires with single subband occupancy at room temperature

A longstanding goal of spintronics is to inject, coherently transport, and detect spins in a semiconductor nanowire where a SINGLE quantized subband is occupied at room temperature. Here, we report achieving this goal in 50-nm diameter InSb nanowires by demonstrating both the spin-valve and the Hanle effect. The spin relaxation time in the nanowires was found to have increased by an order of magnitude over what has been reported in bulk and quantum wells due to the suppression of D'yakonov-Perel' spin relaxation as a result of single subband occupancy. These experiments raise hopes for the realization of a room-temperature Datta-Das spin transistor.