Researcher profile

Hartmut Häffner

Hartmut Häffner contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2022arXiv

Changes in electric-field noise due to thermal transformation of a surface ion trap

We aim to illuminate how the microscopic properties of a metal surface map to its electric-field noise characteristics. In our system, prolonged heat treatments of a metal film can induce a rise in the magnitude of the electric-field noise generated by the surface of that film. We refer to this heat-induced rise in noise magnitude as a thermal transformation. The underlying physics of this thermal transformation process is explored through a series of heating, milling, and electron treatments performed on a single surface ion trap. Between these treatments, $^{40}$Ca$^+$ ions trapped 70~$μ$m above the surface of the metal are used as detectors to monitor the electric-field noise at frequencies close to 1~MHz. An Auger spectrometer is used to track changes in the composition of the contaminated metal surface. With these tools we investigate contaminant deposition, chemical reactions, and atomic restructuring as possible drivers of thermal transformations.

preprint2022arXiv

One- and two-qubit gate infidelities due to motional errors in trapped ions and electrons

In this work, we derive analytic formulae that determine the effect of error mechanisms on one- and two-qubit gates in trapped ions and electrons. First, we analyze, and derive expressions for, the effect of driving field inhomogeneities on one-qubit gate fidelities. Second, we derive expressions for two-qubit gate errors, including static motional frequency shifts, trap anharmonicities, field inhomogeneities, heating, and motional dephasing. We show that, for small errors, each of our expressions for infidelity converges to its respective numerical simulation; this shows our formulae are sufficient for determining error budgets for high-fidelity gates, obviating numerical simulations in future projects. All of the derivations are general to any internal qubit state, and any mixed state of the ion crystal's motion that is diagonal in the Fock state basis. Our treatment of static motional frequency shifts, trap anharmonicities, heating, and motional dephasing apply to both laser-based and laser-free gates, while our treatment of field imhomogenieties applies to laser-free systems.

preprint2021arXiv

Coupling two laser-cooled ions via a room-temperature conductor

We demonstrate coupling between the motions of two independently trapped ions with a separation distance of 620 $μ$m. The ion-ion interaction is enhanced via a room-temperature electrically floating metallic wire which connects two surface traps. Tuning the motion of both ions into resonance, we show flow of energy with a coupling rate of 11 Hz. Quantum-coherent coupling is hindered by strong surface electric-field noise in our device. Our ion wire-ion system demonstrates that room-temperature conductors can be used to mediate and tune interactions between independently trapped charges over distances beyond those achievable with free-space dipole-dipole coupling. This technology may be used to sympathetically cool or entangle remotely trapped charges and enable coupling between disparate physical systems.

preprint2021arXiv

Feasibility study of quantum computing using trapped electrons

We investigate the feasibility of using electrons in a linear Paul trap as qubits in a future quantum computer. We discuss the necessary experimental steps to realize such a device through a concrete design proposal, including trapping, cooling, electronic detection, spin readout and single and multi-qubit gate operations. Numeric simulations indicate that two-qubit Bell-state fidelities of order 99.99% can be achieved assuming reasonable experimental parameters.

preprint2021arXiv

Practical verification protocols for analog quantum simulators

Analog quantum simulation is expected to be a significant application of near-term quantum devices. Verification of these devices without comparison to known simulation results will be an important task as the system size grows beyond the regime that can be simulated classically. We introduce a set of experimentally-motivated verification protocols for analog quantum simulators, discussing their sensitivity to a variety of error sources and their scalability to larger system sizes. We demonstrate these protocols experimentally using a two-qubit trapped-ion analog quantum simulator and numerically using models of up to five qubits.

preprint2021arXiv

Trapping electrons in a room-temperature microwave Paul trap

We demonstrate trapping of electrons in a millimeter-sized quadrupole Paul trap driven at 1.6~GHz in a room-temperature ultra-high vacuum setup. Cold electrons are introduced into the trap by ionization of atomic calcium via Rydberg states and stay confined by microwave and static electric fields for several tens of milliseconds. A fraction of these electrons remain trapped longer and show no measurable loss for measurement times up to a second. Electronic excitation of the motion reveals secular frequencies which can be tuned over a range of several tens to hundreds of MHz. Operating a similar electron Paul trap in a cryogenic environment may provide a platform for all-electric quantum computing with trapped electron spin qubits.

preprint2020arXiv

Materials Challenges for Trapped-Ion Quantum Computers

Trapped-ion quantum information processors store information in atomic ions maintained in position in free space via electric fields. Quantum logic is enacted via manipulation of the ions' internal and shared motional quantum states using optical and microwave signals. While trapped ions show great promise for quantum-enhanced computation, sensing, and communication, materials research is needed to design traps that allow for improved performance by means of integration of system components, including optics and electronics for ion-qubit control, while minimizing the near-ubiquitous electric-field noise produced by trap-electrode surfaces. In this review, we consider the materials requirements for such integrated systems, with a focus on problems that hinder current progress toward practical quantum computation. We give suggestions for how materials scientists and trapped-ion technologists can work together to develop materials-based integration and noise-mitigation strategies to enable the next generation of trapped-ion quantum computers.