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Researcher profile

Hans Knüpfer

Hans Knüpfer contributes to research discovery and scholarly infrastructure.

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math-phmath.APmath.MPmath.CAmath.OC

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Published work

5 published item(s)

preprint2022arXiv

$Γ$-limit for a sharp interface model related to pattern formation on biomembranes

We derive a macroscopic limit for a sharp interface version of a model proposed in [29] to investigate pattern formation due to competition of chemical and mechanical forces in biomembranes. We identify sub- and supercrital parameter regimes and show with the introduction of the autocorrelation function that the ground state energy leads to the isoperimetric problem in the subcritical regime, which is interpreted to not form fine scale patterns.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Asymptotic shape of isolated magnetic domains

We investigate the energy of an isolated magnetized domain $Ω\subset \mathbb{R}^n$ for $n=2,3$. In non-dimensionalized variables, the energy given by $$ \mathcal{E}(Ω) \ = \ \int_{\mathbb{R}^n} |\nabla χ_Ω| \ dx + \int_{\mathbb{R}^n} |\nabla h_Ω|^2 \ dx $$ penalizes the interfacial area of the domain as well as the energy of the corresponding magnetostatic field. Here, the magnetostatic potential $h_Ω$ is determined by $Δh_Ω= \partial_1 χ_Ω$, corresponding to uniform magnetization within the domain. We consider the macroscopic regime $|Ω| \rightarrow \infty$, in which we derive compactness and $Γ$-limit which is formulated in terms of the cross-sectional area of the anisotropically rescaled configuration. We then give the solutions for the limit problems.

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preprint2022arXiv

Onset of pattern formation in thin ferromagnetic films with perpendicular anisotropy

We consider the onset of pattern formation in an ultrathin ferromagnetic film of the form $\tildeΩ_t := \tildeΩ \times [0,t]$ for $\tilde{ Ω} \Subset \mathbb{R}^2$ with preferred perpendicular magnetization direction. The relative micromagnetic energy is given by \begin{align} \mathcal{E}[M] &= \int_{\tildeΩ_t} d^2 |\nabla M|^2+ Q \int_{\tildeΩ_t} (M_1^2+M_2^2) + \int_{\mathbb{R}^3} |\mathcal{H}(M)|^2 - \int_{\mathbb{R}^3} |\mathcal{H}(e_3 χ_{\tilde{ Ω}})|^2, \end{align} describing the energy difference for a given magnetization $M : \mathbb{R}^3 \to \mathbb{R}^3$ with $|M| = χ_{\tilde{ Ω}_t}$ and the uniform magnetization $e_3 χ_{\tilde{ Ω}_t}$. For $t \ll d$, we establish the scaling of the energy and a BV-bound in the critical regime here the base area of the film is of order $|\tilde{ Ω}| \sim (Q-1)^{1/2} d e^{\frac{2πd}t \sqrt{Q-1}}$. We furthermore investigate the onset of non-trivial pattern formation in the critical regime depending on the size of the rescaled film.

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preprint2021arXiv

$Γ$-limit for two-dimensional charged magnetic zigzag domain walls

Charged domain walls are a type of domain walls in thin ferromagnetic films which appear due to global topological constraints. The non-dimensionalized micromagnetic energy for a uniaxial thin ferromagnetic film with in-plane magnetization $m \in \mathbb{S}^1$ is given by \begin{align*} E_ε[m] \ = \ ε\|\nabla m\|_{L^2}^2 + \frac {1}ε \|m \cdot e_2\|_{L^2}^2 + \frac{πλ}{2|\lnε|} \|\nabla \cdot (m-M)\|_{\dot H^{-\frac{1}{2}}}^2, \end{align*} where magnetization in $e_1$-direction is globally preferred and where $M$ is an arbitrary fixed background field to ensure global neutrality of magnetic charges. We consider a material in the form a thin strip and enforce a charged domain wall by suitable boundary conditions on $m$. In the limit $ε\to 0$ and for fixed $λ> 0$, corresponding to the macroscopic limit, we show that the energy $Γ$-converges to a limit energy where jump discontinuities of the magnetization are penalized anisotropically. In particular, in the subcritical regime $λ\leq 1$ one-dimensional charged domain walls are favorable, in the supercritical regime $λ> 1$ the limit model allows for zigzaging two-dimensional domain walls.

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preprint2020arXiv

Note on crystallization for alternating particle chains

We investigate one-dimensional periodic chains of alternate type of particles interacting through mirror symmetric potentials. The optimality of the equidistant configuration at fixed density -- also called crystallization -- is shown in various settings. In particular, we prove the crystallization at any scale for neutral and non-neutral systems with inverse power laws interactions, including the three-dimensional Coulomb potential. We also show the minimality of the equidistant configuration at high density for systems involving inverse power laws and repulsion at the origin. Furthermore, we derive a necessary condition for crystallization at high density based on the positivity of the Fourier transform of the interaction potentials sum.

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