Researcher profile

Hanqing Mao

Hanqing Mao contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Electronic Nature of Charge Density Wave and Electron-Phonon Coupling in Kagome Superconductor KV$_3$Sb$_5$

The Kagome superconductors AV3Sb5 (A=K, Rb, Cs) have received enormous attention due to their nontrivial topological electronic structure, anomalous physical properties and superconductivity. Unconventional charge density wave (CDW) has been detected in AV3Sb5. High-precision electronic structure determination is essential to understand its origin. Here we unveil electronic nature of the CDW phase in our high-resolution angle-resolved photoemission measurements on KV3Sb5. We have observed CDW-induced Fermi surface reconstruction and the associated band folding. The CDW-induced band splitting and the associated gap opening have been revealed at the boundary of the pristine and reconstructed Brillouin zones. The Fermi surface- and momentum-dependent CDW gap is measured and the strongly anisotropic CDW gap is observed for all the V-derived Fermi surface. In particular, we have observed signatures of the electron-phonon coupling in KV3Sb5. These results provide key insights in understanding the nature of the CDW state and its interplay with superconductivity in AV3Sb5 superconductors.

preprint2022arXiv

Giant and Reversible Electronic Structure Evolution in a Magnetic Topological Material EuCd2As2

The electronic structure and the physical properties of quantum materials can be significantly altered by charge carrier doping and magnetic state transition. Here we report a discovery of a giant and reversible electronic structure evolution with doping in a magnetic topological material. By performing high-resolution angle-resolved photoemission measurements on EuCd2As2,we found that a huge amount of hole doping can be introduced into the sample surface due to surface absorption. The electronic structure exhibits a dramatic change with the hole doping which can not be described by a rigid band shift. Prominent band splitting is observed at high doping which corresponds to a doping-induced magnetic transition at low temperature (below -15 K) from an antiferromagnetic state to a ferromagnetic state. These results have established a detailed electronic phase diagram of EuCd2As2 where the electronic structure and the magnetic structure change systematically and dramatically with the doping level. They further suggest that the transport, magnetic and topological properties of EuCd2As2 can be greatly modified by doping. These work will stimulate further investigations to explore for new phenomena and properties in doping this magnetic topological material.