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Researcher profile

Hangyu Zhou

Hangyu Zhou contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciArtificial Intelligencecond-mat.mes-hallHuman-Computer Interaction

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Published work

3 published item(s)

preprint2026arXiv

The Garden of Forking Paths: Narrative Arc-Conditioned Gameplay Planning

Narrative archetypes (e.g., Hero's Journey, Three-act structure) provide universal story structures that resonate across cultures and media and are important for video game storytelling, yet existing LLM-based methods lack explicit use of these archetypes in procedurally generated games. We propose Forking Garden, a framework for narrative arc-conditioned gameplay planning that generates branching games from user-provided storylines. Our approach first generates a diverse pool of independent nodes, then assembles them into a dungeon graph via arc-guided constraint algorithms, where each node achieves multimodal alignment of gameplay elements. We develop an end-to-end interactive system that instantiates the framework.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Kagomerization of transition metal monolayers induced by two-dimensional hexagonal boron nitride

The kagome lattice is an exciting solid state physics platform for the emergence of nontrivial quantum states driven by electronic correlations: topological effects, unconventional superconductivity, charge and spin density waves, and unusual magnetic states such as quantum spin liquids. While kagome lattices have been realized in complex multi-atomic bulk compounds, here we demonstrate from first-principles a process that we dub kagomerization, in which we fabricate a two-dimensional kagome lattice in monolayers of transition metals utilizing a hexagonal boron nitride (h-BN) overlayer. Surprisingly, h-BN induces a large rearrangement of the transition metal atoms supported on a fcc(111) heavy-metal surface. This reconstruction is found to be rather generic for this type of heterostructures and has a profound impact on the underlying magnetic properties, ultimately stabilizing various topological magnetic solitons such as skyrmions and bimerons. Our findings call for a reconsideration of h-BN as merely a passive capping layer, showing its potential for not only reconstructing the atomic structure of the underlying material, e.g. through the kagomerization of magnetic films, but also enabling electronic and magnetic phases that are highly sought for the next generation of device technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Impact of Spin-Orbit Coupling on Quantum Transport in Magnetic Tunnel Junction with an anti-ferromagnetic Capping Layer

Using first-principles calculations, we explore the role of an anti-ferromagnetic heavy-metal, L1$_0$-IrMn, as a capping layer in a perpendicular magnetic tunnel junction (\emph{p}-MTJ). A comparative study is conducted by employing conventional non-magnetic heavy-metals (Ta, W or Mo) capping layers along with an anti-ferromagnetic IrMn in a symmetric-MTJ X/FeCo/MgO/FeCo/X, where X=Ta, W, Mo or IrMn. Firstly, the calculations without including spin-orbit coupling (SOC) are presented where the highest TMR is achieved in IrMn-IrMn MTJ compared to that of Ta-Ta, W-W and Mo-Mo MTJs. The origin of this large TMR is attributed to, both, the large spin-polarization due to reduced lattice-mismatch and the non-identical signatures of both the anti-parallel conduction-channels caused by the anti-ferromagnetic ordering of IrMn that reflects the spins at IrMn/FeCo interface. Moreover, when SOC is switched-on, the increase of TMR is observed in all the MTJs with a particularly giant enhancement in IrMn-IrMn MTJ. This SOC-induced increase in TMR is ascribed to the mixed contribution of $Δ_1$ and $Δ_5$ states and the additional increase in the band levels of the out-of-plane orbitals, \emph{p}$_z$, \emph{d}$_{z}^2$ and \emph{d}$_{xz}$ due to the lifting of degeneracy. Furthermore, it was also observed that the lattice-mismatch-induced strain might create an orbital reconstruction within the capping layer, probably, due to the crystallographic deformation and, in turn, in the adjacent FeCo-electrode. This microscopic mechanism also plays an additional decisive role in enhancing the TMR. Finally, our results indicate that IrMn can offer giant TMR in future spin-orbit toque (SOT) based MRAM devices with a straightforward design strategy.

0 citations0 reviewsNo code linkedOpen access