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Researcher profile

Hanchen Huang

Hanchen Huang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-ph

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Published work

8 published item(s)

preprint2014arXiv

Controllable growth of Al nanorods for inexpensive and degradation-resistant surface enhanced Raman spectroscopy

Surface enhanced Raman spectroscopy (SERS) has the capacity of detecting trace amount of biological or chemical matter, even single molecules, through the use of metallic nanostructures such as nanorods. Silver (Ag) and gold (Au) nanorods have led to the impressive enhancement of Raman signals, but they are either expensive, degrade fast over time, or suffer from poor sample repeatability. In contrast, Al is much less expensive, and Al nanorods could potentially be resistant to degradation over time due to the protection from native aluminum-oxide layers. Unfortunately, the controllable growth of Al nanorods has not been reported so far. This Letter reports, for the first time, the controllable growth of Al nanorods using physical vapor deposition (PVD); through the use of oxygen (O) surfactants. The enhancement factor of the Al nanorods in SERS is as high as 1250, and shows nearly no degradation after storage in ambient for 30 days or annealing at 475 K for one day.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Airtight metallic sealing at room temperature under small mechanical pressure

Here, we report a process of metallic sealing using small well-separated Ag nanorods; the process is at room temperature under a small mechanical pressure of 9.0 MPa, and also in ambient. The metallic seals have an air leak rate of 1.1 x 10-3 cm3atm/m2/day, and mechanical shear strength higher than 8.9 MPa. This leak rate meets the requirement of organic solar cells and organic light emitting diodes [1].

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

A Response Embedded Atom Method of Interatomic Potentials

The embedded atom method (EAM) potentials are probably the most widely used interatomic potentials for metals and alloys. However, the EAM potentials impose three constraints on elastic constants that are inconsistent with experiments. At a more subtle (but more important) level, the EAM potentials often incorrectly describe the outward/inward relaxation of surface layers, and therefore will not reliably describe nanostructures. This Letter reports a response EAM (R-EAM) that addresses both issues. Conceptually, the electron distribution from each atom does not respond to the atoms environment within the EAM. In reality, the electron distribution from each atom depends on the atoms environment, and this dependence is explicitly incorporated in the R-EAM. Analytical derivation shows that the R-EAM potentials do not impose these three constraints on elastic constants that EAM potentials do. Further, taking hexagonal close packed (HCP) metals Ti, Mg, and Zn as the prototypes, the authors show that the R-EAM potentials correctly describe surfaces, in terms of interlayer spacing and surface reconstruction, in agreement with quantum mechanics calculations, while EAM potentials are not in agreement. In comparison to EAM potentials, the R-EAM potentials require only approximately twice the computational power.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Controversy over Elastic Constants Based on Interatomic Potentials

A controversy exists among literature reports of constraints on elastic constants. In particular, it has been reported that embedded atom method (EAM) potentials generally impose three constraints on elastic constants of crystals that are inconsistent with experiments. However, it can be shown that some EAM potentials do not impose such constraints at all. This paper first resolves this controversy by identifying the necessary condition when the constraints exist and demonstrating the condition is physically necessary. Furthermore, this paper reports that these three constraints are eliminated under all conditions, by using response EAM (R-EAM) potentials.

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preprint2011arXiv

Anomaly of Film Porosity Dependence on Deposition Rate

This Letter reports an anomaly of film porosity dependence on deposition rate during physical vapor deposition - the porosity increases as deposition rate decreases. Using glancing angle deposition of Cu on SiO2 substrate, the authors show that the Cu film consists of well separated nanorods when the deposition rate is 1 nm/second, and that the Cu films consists of a more uniform (or lower porosity) film when the deposition rate is 6 nm/second; all other deposition conditions remain the same. This anomaly is the result of interplay among substrate non-wetting, density of Cu nuclei on the substrate, and the minimum diameter of nanorods.

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preprint2011arXiv

Critical Separation of Clusters During Physical Vapor Deposition

The critical separation of clusters, corresponding to the maximum density of clusters, affects growth characteristics during physical vapor deposition (PVD). In particular, this separation can affect surface smoothness in growing single-crystalline films, grain size distribution in growing polycrystalline films, and diameter in growing nanorods. This Letter reports a theoretical expression of the critical separation as a function of deposition conditions and accompanying verifications using lattice kinetic Monte Carlo (MC) simulations of PVD on Cu{111}. In contrast to existing theories, the theoretical expression in this Letter is (1) closed-form, (2) in better agreement with the MC simulations than the lattice approximation and (3) in better agreement with the MC simulations than the mean field approximation when the critical separation is large- larger than 25 nm for PVD on Cu{111}.

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preprint2011arXiv

Diffusion Boundary Condition at Surface Steps

This Communication reports a geometrical factor that is necessary in the diffusion boundary condition across surface steps. Specifically, this factor relates adatom concentration to its spatial gradient at a surface step, and it describes the fraction of jump attempts that cross the step. In this Communication, the authors show that the factor is 1/Πusing theoretical formulation and further verify the formulation using numerical simulations for triangular, square, and hexagonal surface lattices.

0 citations0 reviewsNo code linkedOpen access