Researcher profile

Hame Sehmi

Hame Sehmi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 11 - UnverifiedVerification L1Unclaimed author
1works
0followers
2topics
2close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

1 published item(s)

preprint2019arXiv

Applying the resonant-state expansion to realistic materials with frequency dispersion

The dispersive resonant-state expansion, developed for an accurate calculation of the resonant states in open optical systems with frequency dispersion, is applied here to realistic materials, such as metallic nanoparticles and semiconductor microspheres. The material permittivity is determined by fitting the measured indices of refraction and absorption with a generalized Drude-Lorentz model containing a number of poles in the complex frequency plane. Each Drude or Lorentz pole generates an infinite series of resonant states. Furthermore, for small nanoparticles, each of these poles produces a distinct surface plasmon polariton mode. The evolution of these multiple surface modes with increasing radius traces the transition from the electrostatic limit to significant retardation and radiation. Treating the optical phonon range in a semiconductor microsphere, a reststrahlen band separating the resonant states is found. Considering a small energy range around the semiconductor band gap, the transition from absorption to gain is described by inverting the Lorentz pole weight, which results in the formation of lasing resonant states. Interestingly, the series of resonant states converging towards the absorption pole from the lower frequency side reshapes for a gain pole into a clockwise loop approaching the pole from the higher frequency side, being separated from a series spanning from low to high frequencies and containing the lasing modes.