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Haiqing Xie

Haiqing Xie contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2013arXiv

Intrinsic spin-relaxation induced negative tunnel magnetoresistance in a single-molecule magnet

We investigate theoretically the effects of intrinsic spin-relaxation on the spin-dependent transport through a single-molecule magnet (SMM), which is weakly coupled to ferromagnetic leads. The tunnel magnetoresistance (TMR) is obtained by means of the rate-equation approach including not only the sequential but also the cotunneling processes. It is shown that the TMR is strongly suppressed by the fast spin-relaxation in the sequential region and can vary from a large positive to slight negative value in the cotunneling region. Moreover, with an external magnetic field along the easy-axis of SMM, a large negative TMR is found when the relaxation strength increases. Finally, in the high bias voltage limit the TMR for the negative bias is slightly larger than its characteristic value of the sequential region, however it can become negative for the positive bias caused by the fast spin-relaxation.

preprint2012arXiv

Spin current and polarization reversal through a single-molecule magnet with ferromagnetic electrodes

We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic exchange-couplings between the molecular magnet and transported electron-spin in the nonlinear tunneling regime. For the ferromagnetic exchangecoupling, spin current exhibits step- and basin-like behaviors in the parallel and antiparallel configurations respectively. An interesting observation is that the polarization reversal of spin-current can be realized and manipulated by the variation of bias voltage in the case of antiferromagnetic exchange-coupling with antiparallel lead-configuration, which may be useful in the development of spintronic devices, while the bias voltage can only affect the magnitude of spin-polarization in the ferromagnetic coupling.

preprint2012arXiv

Spin-dependent thermoelectric transport through double quantum dots

We study thermoelectric transport through double quantum dots system with spin-dependent interdot coupling and ferromagnetic electrodes by means of the non-equilibrium Green function in the linear response regime. It is found that the thermoelectric coefficients are strongly dependent on the splitting of interdot coupling, the relative magnetic configurations and the spin polarization of leads. In particular, the thermoelectric efficiency can achieve considerable value in parallel configuration when the effective interdot coupling and tunnel coupling between QDs and the leads for spin-down electrons are small. Moreover, the thermoelectric efficiency increases with the intradot Coulomb interactions increasing and can reach very high value at an appropriate temperature. In the presence of the magnetic field, the spin accumulation in leads strongly suppresses the thermoelectric efficiency and a pure spin thermopower can be obtained.

preprint2012arXiv

Tunneling anisotropic magnetoresistance in single-molecule magnet junctions

We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling anisotropic magnetoresistance (TAMR), which varies with the angle between the magnetization direction of ferromagnetic lead and the easy axis of SMM. The angular dependence of TAMR can serve as a probe to determine experimentally the easy axis of SMM. Moreover, it is demonstrated that both the magnitude and sign of TAMR are tunable by the bias voltage, suggesting a promising TAMR based spintronic molecule-device.