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Haiming Deng

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Published work

11 published item(s)

preprint2021arXiv

Systemic Consequences of Disorder in Magnetically Self-Organized Topological MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ Superlattices

MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally doped materials, however, the detrimental effects of certain disorders are becoming increasingly acknowledged. Here, from compiling structural, compositional, and magnetic metrics of disorder in ferromagnetic MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ it is found that migration of Mn between MnBi$_{2}$T$e_{4}$ septuple layers (SLs) and otherwise non-magnetic Bi$_{2}$Te$_{3}$ quintuple layers (QLs) has systemic consequences - it induces ferromagnetic coupling of Mn-depleted SLs with Mn-doped QLs, seen in ferromagnetic resonance as an acoustic and optical resonance mode of the two coupled spin subsystems. Even for a large SL separation (n $\gtrsim$ 4 QLs) the structure cannot be considered as a stack of uncoupled two-dimensional layers. Angle-resolved photoemission spectroscopy and density functional theory studies show that Mn disorder within an SL causes delocalization of electron wavefunctions and a change of the surface bandstructure as compared to the ideal MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$. These findings highlight the critical importance of inter- and intra-SL disorder towards achieving new QAH platforms as well as exploring novel axion physics in intrinsic topological magnets.

preprint2021arXiv

Topological surface currents accessed through reversible hydrogenation of the three-dimensional bulk

Hydrogen, the smallest and most abundant element in nature, can be efficiently incorporated within a solid and drastically modify its electronic state - it has been known to induce novel magnetoelectric effects in complex perovskites and modulate insulator-to-metal transition in a correlated Mott oxide. Here we demonstrate that hydrogenation resolves an outstanding challenge in chalcogenide classes of three-dimensional (3D) topological insulators and magnets - the control of intrinsic bulk conduction that denies access to quantum surface transport. With electrons donated by a reversible binding of H+ ions to Te(Se) chalcogens, carrier densities are easily changed by over 10^20 cm^-3, allowing tuning the Fermi level into the bulk bandgap to enter surface/edge current channels. The hydrogen-tuned topological materials are stable at room temperature and tunable disregarding bulk size, opening a breadth of platforms for harnessing emergent topological states.

preprint2020arXiv

Designer topological insulator with enhanced gap and suppressed bulk conduction in Bi2Se3/Sb2Te3 ultra-short period superlattices

A novel approach to reduce bulk conductance by the use of short period superlattices (SL) of two alternating topological insulator layers is presented. Evidence for a superlattice gap enhancement (SGE) was obtained from the observed reduction of bulk background doping by more than one order of magnitude, from 1.2x1020 cm-3 to 8.5x1018 cm-3 as the period of Bi2Se3/Sb2Te3 SLs is decreased from 12 nm to 5 nm, respectively. Tight binding calculations show that in the very thin period regime, a significant SGE can be achieved by the appropriate choice of materials. The ultrathin SL of alternating Bi2Se3 and Sb2Te3 layers behaves as a new designer material with a bulk bandgap as much as 60% larger than the bandgap of the constituent layer with the largest bandgap, while retaining topological surface features. Analysis of the weak antilocalization (WAL) cusp evident in the low temperature magneto-conductance of a very thin period SL sample grown confirms that the top and bottom surfaces of the SL structure behave as Dirac surface states. This approach represents a promising and yet to be explored platform for building truly insulating bulk TIs.

preprint2020arXiv

Observation of high-temperature quantum anomalous Hall regime in intrinsic MnBi$_2$Te$_4$/Bi$_2$Te$_3$ superlattice

The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and its most consequential manifestation is the dissipation-free flow of chiral charge currents at the edges that can potentially transform future quantum electronics. Here we report a previously unknown Berry-curvature-driven anomalous Hall regime ('Q-window') at above-Kelvin temperatures in the magnetic topological bulk crystals where through growth Mn ions self-organize into a period-ordered MnBi$_2$Te$_4$/Bi$_2$Te$_3$ superlattice. Robust ferromagnetism of the MnBi$_2$Te$_4$ monolayers opens a large surface gap, and anomalous Hall conductance reaches an $e^2/h$ quantization plateau when the Fermi level is tuned into this gap within a Q-window in which the anomalous Hall conductance from the bulk is to a high precision zero. The quantization in this new regime is not obstructed by the bulk conduction channels and thus should be present in a broad family of topological magnets.

preprint2019arXiv

Spin memory of the topological material under strong disorder

Robustness to disorder - the defining property of any topological state - has been mostly tested in low-disorder translationally-invariant materials systems where the protecting underlying symmetry, such as time reversal, is preserved. The ultimate disorder limits to topological protection are still unknown, however, a number of theories predict that even in the amorphous state a quantized conductance might yet reemerge. Here we report a directly detected robust spin response in structurally disordered thin films of the topological material Sb2Te3 free of extrinsic magnetic dopants, which we controllably tune from a strong (amorphous) to a weak crystalline) disorder state. The magnetic signal onsets at a surprisingly high temperature (~ 200 K) and eventually ceases within the crystalline state. We demonstrate that in a strongly disordered state disorder-induced spin correlations dominate the transport of charge - they engender a spin memory phenomenon, generated by the nonequilibrium charge currents controlled by localized spins. The negative magnetoresistance (MR) in the extensive spin-memory phase space is isotropic. Within the crystalline state, it transitions into a positive MR corresponding to the weak antilocalization (WAL) quantum interference effect, with a 2D scaling characteristic of the topological state. Our findings demonstrate that these nonequilibrium currents set a disorder threshold to the topological state; they lay out a path to tunable spin-dependent charge transport and point to new possibilities of spin control by disorder engineering of topological materials

preprint2016arXiv

Stable topological insulators achieved using high energy electron beams

Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift ($\sim 2.5$ MeV energy) electron beams allows to compensate these defects, bring the Fermi level back into the bulk gap, and reach the charge neutrality point (CNP). Controlling the beam fluence we tune bulk conductivity from \textit{p}- (hole-like) to \textit{n}-type (electron-like), crossing the Dirac point and back, while preserving the Dirac energy dispersion. The CNP conductance has a two-dimensional (2D) character on the order of ten conductance quanta $G_0 =e^2/h$, and reveals, both in Bi$_2$Te$_3$ and Bi$_2$Se$_3$, the presence of only two quantum channels corresponding to two topological surfaces. The intrinsic quantum transport of the topological states is accessible disregarding the bulk size.

preprint2015arXiv

Cluster Gutzwiller study of Bose-Hubbard ladder: ground-state phase diagram and many-body Landau-Zener dynamics

We present a cluster Gutzwiller mean-field study for ground states and time-evolution dynamics in the Bose-Hubbard ladder (BHL), which can be realized by loading Bose atoms in double-well optical lattices. In our cluster mean-field approach, we treat each double-well unit of two lattice sites as a coherent whole for composing the cluster Gutzwiller ansatz, which may remain some residual correlations in each two-site unit. For a unbiased BHL, in addition to conventional superfluid phase and integer Mott insulator phases, we find that there are exotic fractional insulator phases if the inter-chain tunneling is much stronger than the intra-chain one. The fractional insulator phases can not be found by using a conventional mean-field treatment based upon the single-site Gutzwiller ansatz. For a biased BHL, we find there appear single-atom tunneling and interaction blockade if the system is dominated by the interplay between the on-site interaction and the inter-chain bias. In the many-body Landau-Zener process, in which the inter-chain bias is linearly swept from negative to positive or vice versa, our numerical results are qualitatively consistent with the experimental observation [Nat. Phys. \textbf{7}, 61 (2011)]. Our cluster bosonic Gutzwiller treatment is of promising perspectives in exploring exotic quantum phases and time-evolution dynamics of bosonic particles in superlattices.

preprint2014arXiv

Emergent surface superconductivity of nanosized Dirac puddles in a topological insulator

Surfaces of three-dimensional topological insulators have emerged as one of the most remarkable states of condensed quantum matter1-5 where exotic electronic phases of Dirac particles should arise1,6-8. Here we report a discovery of surface superconductivity in a topological material (Sb2Te3) with resistive transition at a temperature of ~9 K induced through a minor tuning of growth chemistry that depletes bulk conduction channels. The depletion shifts Fermi energy towards the Dirac point as witnessed by about two orders of magnitude reduction of carrier density and by very large (~25,000 cm^2/Vs) carrier mobility. Direct evidence from scanning tunneling spectroscopy and from magnetic response show that the superconducting condensate forms in surface puddles at unprecedentedly higher temperatures, near 60 K and above. The new superconducting state we observe to emerge in puddles can be tuned by the topological material's parameters such as Fermi velocity and mean free path through band engineering; it could potentially become a hunting ground for Majorana modes6 and lead to a disruptive paradigm change9 in how quantum information is processed.

preprint2014arXiv

Photon-induced sideband transitions in a many-body Landau-Zener process

We investigate the many-body Landau-Zener (LZ) process in a two-site Bose-Hubbard model driven by a time-periodic field. We find that the driving field may induce sideband transitions in addition to the main LZ transitions. These photon-induced sideband transitions are a signature of the photon-assisted tunneling in our many-body LZ process. In the strong interaction regime, we develop an analytical theory for understanding the sideband transitions, which is confirmed by our numerical simulation. Furthermore, we discuss the quantization of the driving field. In the effective model of the quantized driving field, the sideband transitions can be understood as the LZ transitions between states of different "photon" numbers.

preprint2014arXiv

Singular robust room-temperature spin response from topological Dirac fermions

Topological insulators are a class of solids in which the nontrivial inverted bulk band structure gives rise to metallic surface states that are robust against impurity scattering. In three-dimensional (3D) topological insulators, however, the surface Dirac fermions intermix with the conducting bulk, thereby complicating access to the low energy (Dirac point) charge transport or magnetic response. Here we use differential magnetometry to probe spin rotation in the 3D topological material family (Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$). We report a paramagnetic singularity in the magnetic susceptibility at low magnetic fields which persists up to room temperature, and which we demonstrate to arise from the surfaces of the samples. The singularity is universal to the entire family, largely independent of the bulk carrier density, and consistent with the existence of electronic states near the spin-degenerate Dirac point of the 2D helical metal. The exceptional thermal stability of the signal points to an intrinsic surface cooling process, likely of thermoelectric origin, and establishes a sustainable platform for the singular field-tunable Dirac spin response.

preprint2011arXiv

Nonlinear quantum interferometry with Bose condensed atoms

In quantum interferometry, it is vital to control and utilize nonlinear interactions for achieving high-precision measurements. Attribute to their long coherent time and high controllability, ultracold atoms including Bose condensed atoms have been widely used for implementing quantum interferometry. Here, we review the recent progresses in theoretical studies of quantum interferometry with Bose condensed atoms. In particular, we focus on the nonlinear phenomena induced by the atom-atom interaction and how to control and utilize these nonlinear phenomena. Under the mean-field description, due to the atom-atom interaction, matter-wave solitons appear in the interference patterns, and macroscopic quantum self-trapping exists in the Bose-Josephson junctions. Under the many-body description, the atom-atom interaction can generate non-classical entanglement, which may be utilized to achieve high-precision measurements beyond the standard quantum limit.