Researcher profile

Haicheng Lin

Haicheng Lin contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Anomalous thermoelectric effects and quantum oscillations in the kagome metal CsV$_3$Sb$_5$

The kagome metal compounds $A$V$_3$Sb$_5$ ($A$ = K, Rb, and Cs) feature a wealth of phenomena including nontrivial band topology, charge density wave (CDW), and superconductivity. One intriguing property is the time-reversal symmetry breaking in the CDW state without local moments, which leads to anomalous transport responses. Here, we report the investigation of magneto-thermoelectric effects on high-quality CsV$_3$Sb$_5$ single crystals. A large anomalous Nernst effect is observed at temperatures below 30 K. Multiple Fermi surfaces with small effective masses are revealed by quantum oscillations in Nernst and Seebeck signals under high magnetic field. Furthermore, we find an unknown frequency, and attribute it to the magnetic breakdown across two smaller Fermi surfaces. A gap around 20 meV can be resolved from the breakdown threshold field, which we propose to be introduced by the CDW. These results shed new light on the CDW-related phenomena, particularly in $A$V$_3$Sb$_5$ compounds.

preprint2020arXiv

Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb

We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $ω$ full width half max of $7.7^{''}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~\text{nm}$ as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Néel temperature of $62~\text{K}$, a Curie-Weiss temperature of $-65~\text{K}$ and an effective moment of $5.9~μ_{\text{B}}/\text{f.u.}$. Transport measurements confirm the antiferromagetic transition and show a residual resistivity at $4~\text{K}$ of $35~μΩ\cdot \text{cm}$.