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Claus Schumacher

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2 publications

preprint2020arXiv

Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb

We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a ωω full width half max of 7.7′′7.7^{''} according to high resolution X-ray diffraction, and a root mean square roughness of 0.14 nm0.14~\text{nm} as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Néel temperature of 62 K62~\text{K}, a Curie-Weiss temperature of −65 K-65~\text{K} and an effective moment of 5.9 μB/f.u.5.9~μ_{\text{B}}/\text{f.u.}. Transport measurements confirm the antiferromagetic transition and show a residual resistivity at 4 K4~\text{K} of 35 μΩ⋅cm35~μΩ\cdot \text{cm}.

preprint2014arXiv

Control of the in-plane anisotropy in off-stoichiometric NiMnSb

NiMnSb is a ferromagnetic half-metal which, because of its rich anisotropy and very low Gilbert damping, is a promising candidate for applications in information technologies. We have investigated the in-plane anisotropy properties of thin, MBE-grown NiMnSb films as a function of their Mn concentration. Using ferromagnetic resonance (FMR) to determine the uniaxial and four-fold anisotropy fields, 2KU/Ms and 2K1/Ms, we find that a small variation in composition is sufficient to change the film from primarily four-fold to primarily uniaxial behavior, allowing for continuous tuning of the anisotropy. This provides valuable flexibility in designing new device geometries.

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