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Hai Wei

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Published work

7 published item(s)

preprint2022arXiv

Subjective and Objective Quality Assessment of High-Motion Sports Videos at Low-Bitrates

Videos often have to be transmitted and stored at low bitrates due to poor network connectivity during adaptive bitrate streaming. Designing optimal bitrate ladders that would select the perceptually-optimized resolution, frame-rate, and compression level for low-bitrate videos for adaptive streaming across the internet is therefore a task of great interest. Towards that end, we conducted the first large-scale study of medium and low-bitrate videos from live sports for two codecs (Elemental AVC and HEVC) and created the Amazon Prime Video Low-Bitrate Sports (APV LBS) dataset. The study involved 94 participants and 742 videos, with more than 23,000 human opinion scores collected in total. We analyzed the data obtained and we also conducted an extensive evaluation of objective Video Quality Assessment (VQA) algorithms and benchmarked their performance, and make recommendations on bitrate ladder design. We're making the metadata and VQA features available at https://github.com/JoshuaEbenezer/lbmfr-public.

preprint2020arXiv

No-Reference Video Quality Assessment Using Space-Time Chips

We propose a new prototype model for no-reference video quality assessment (VQA) based on the natural statistics of space-time chips of videos. Space-time chips (ST-chips) are a new, quality-aware feature space which we define as space-time localized cuts of video data in directions that are determined by the local motion flow. We use parametrized distribution fits to the bandpass histograms of space-time chips to characterize quality, and show that the parameters from these models are affected by distortion and can hence be used to objectively predict the quality of videos. Our prototype method, which we call ChipQA-0, is agnostic to the types of distortion affecting the video, and is based on identifying and quantifying deviations from the expected statistics of natural, undistorted ST-chips in order to predict video quality. We train and test our resulting model on several large VQA databases and show that our model achieves high correlation against human judgments of video quality and is competitive with state-of-the-art models.

preprint2015arXiv

Rapid Co-optimization of Processing and Circuit Design to Overcome Carbon Nanotube Variations

Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly-scaled technology nodes. However, carbon nanotubes (CNTs) are inherently subject to variations that reduce circuit yield, increase susceptibility to noise, and severely degrade their anticipated energy and speed benefits. Joint exploration and optimization of CNT processing options and CNFET circuit design are required to overcome this outstanding challenge. Unfortunately, existing approaches for such exploration and optimization are computationally expensive, and mostly rely on trial-and-error-based ad hoc techniques. In this paper, we present a framework that quickly evaluates the impact of CNT variations on circuit delay and noise margin, and systematically explores the large space of CNT processing options to derive optimized CNT processing and CNFET circuit design guidelines. We demonstrate that our framework: 1) runs over 100x faster than existing approaches, and 2) accurately identifies the most important CNT processing parameters, together with CNFET circuit design parameters (e.g., for CNFET sizing and standard cell layouts), to minimize the impact of CNT variations on CNFET circuit speed with less than 5% energy cost, while simultaneously meeting circuit-level noise margin and yield constraints.

preprint2014arXiv

Tuning of the hole spin relaxation time in single self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots by electric field

We investigate the electric field tuning of the phonon-assisted hole spin relaxation in single self-assembled In$_{1-x}$Ga$_{x}$As/GaAs quantum dots, using an atomistic empirical pseudopotential method. We find that the electric field along the growth direction can tune the hole spin relaxation time for more than one order of magnitude. The electric field can prolong or shorten the hole spin lifetime and the tuning shows an asymmetry in terms of the field direction. The asymmetry is more pronounced for the taller the dot. The results show that the electric field is an effective way to tune the hole spin-relaxation in self-assembled QDs.

preprint2013arXiv

Slow Exciton Spin Relaxation in Single Self-Assembled In$_{1-x}$Ga$_x$As/GaAs Quantum Dots

We calculate the acoustic phonon-assisted exciton spin relaxation in single self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots using an atomic empirical pseudopotential method. We show that the transition from bright to dark exciton states is induced by Coulomb correlation effects. The exciton spin relaxation time obtained from sophisticated configuration interaction calculations is approximately 15--55 $μ$s in pure InAs/GaAs QDs and even longer in alloy dots. These results contradict previous theoretical and experimental results, which suggest very short exciton spin times (a few ns), but agree with more recent experiments that suggest that excitons have long spin relaxation times ($>$ 1 $μ$s).

preprint2013arXiv

Tuning exciton and biexciton transition energies and fine structure splitting through hydrostatic pressure in single InGaAs quantum dots

We demonstrate that the exciton and biexciton emission energies as well as exciton fine structure splitting (FSS) in single (In,Ga)As/GaAs quantum dots (QDs) can be efficiently tuned using hydrostatic pressure in situ in an optical cryostat at up to 4.4 GPa. The maximum exciton emission energy shift was up to 380 meV, and the FSS was up to 180 $μ$eV. We successfully produced a biexciton antibinding-binding transition in QDs, which is the key experimental condition that generates color- and polarization-indistinguishable photon pairs from the cascade of biexciton emissions and that generates entangled photons via a time-reordering scheme. We perform atomistic pseudopotential calculations on realistic (In,Ga)As/GaAs QDs to understand the physical mechanism underlying the hydrostatic pressure-induced effects.

preprint2010arXiv

Atomistic theory of spin relaxation in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field

We present full atomistic calculations of the spin-flip time (T$_{1}$) of electrons and holes mediated by acoustic phonons in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field. At low magnetic field, the first-order process is suppressed, and the second-order process becomes dominant. We find that the spin-phonon-interaction induced spin relaxation time is 40 - 80 s for electrons, and 1 - 20 ms for holes at 4.2 K. The calculated hole-spin relaxation times are in good agreement with recent experiments, which suggests that the two-phonon process is the main relaxation mechanism for hole-spin relaxation in the self-assembled quantum dots at zero field. We further clarify the structural and alloy composition effects on the spin relaxation in the quantum dots.