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Hai L. Feng

Hai L. Feng contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2020arXiv

Magnetic and electronic properties of a topological nodal line semimetal candidate: HoSbTe

We report the experimental and theoretical studies of a magnetic topological nodal line semimetal candidate HoSbTe. Single crystals of HoSbTe are grown from Sb flux, crystallizing in a tetragonal layered structure (space group: P4/nmm, no.129), in which the Ho-Te bilayer is separated by the square-net Sb layer. The magnetization and specific heat present distinct anomalies at 4 K related to an antiferromagnetic (AFM) phase transition. Meanwhile, with applying magnetic field perpendicular and parallel to the crystallographic c axis, an obvious magnetic anisotropy is observed. Electrical resistivity undergoes a bad-metal-like state below 200 K and reveals a plateau at about 8 K followed by a drop due to the AFM transition. In addition, with the first-principle calculations of band structure, we find that HoSbTe is a topological nodal line semimetal or a weak topological insulator with or without taking the spin-orbit coupling into account, providing a platform to investigate the interplay between magnetic and topological fermionic properties.

preprint2020arXiv

Magnetically induced metal-insulator transition in Pb2CaOsO6

We report on the structural, magnetic, and electronic properties of two new double-perovskites synthesized under high pressure; Pb2CaOsO6 and Pb2ZnOsO6. Upon cooling below 80 K, Pb2CaOsO6 simultaneously undergoes a metal--insulator transition and develops antiferromagnetic order. Pb2ZnOsO6, on the other hand, remains a paramagnetic metal down to 2 K. The key difference between the two compounds lies in their crystal structure. The Os atoms in Pb2ZnOsO6 are arranged on an approximately face-centred cubic lattice with strong antiferromagnetic nearest-neighbor exchange couplings. The geometrical frustration inherent to this lattice prevents magnetic order from forming down to the lowest temperatures. In contrast, the unit cell of Pb2CaOsO6 is heavily distorted up to at least 500 K, including antiferroelectric-like displacements of the Pb and O atoms despite metallic conductivity above 80 K. This distortion relieves the magnetic frustration, facilitating magnetic order which in turn drives the metal--insulator transition. Our results suggest that the phase transition in Pb2CaOsO6 is spin-driven, and could be a rare example of a Slater transition.

preprint2020arXiv

Room-temperature ferrimagnetism of anti-site-disordered Ca2MnOsO6

Room-temperature ferrimagnetism was discovered for the anti-site-disordered perovskite Ca2MnOsO6 with Tc = 305 K. Ca2MnOsO6 crystallizes into an orthorhombic structure with a space group of Pnma, in which Mn and Os share the oxygen-coordinated-octahedral site at an equal ratio without a noticeable ordered arrangement. The material is electrically semiconducting with variable-range-hopping behavior. X-ray absorption spectroscopy confirmed the trivalent state of the Mn and the pentavalent state of the Os. X-ray magnetic circular dichroism spectroscopy reveals that the Mn and Os magnetic moments are aligned antiferromagnetically, thereby classifying the material as a ferrimagnet which is in accordance with band structure calculations. It is intriguing that the magnetic signal of the Os is very weak, and that the observed total magnetic moment is primarily due to the Mn. The Tc = 305 K is the second highest in the material category of so-called disordered ferromagnets such as CaRu1-xMnxO3, SrRu1-xCrxO3, and CaIr1-xMnxO3, and hence, may support the development of spintronic oxides with relaxed requirements concerning the anti-site disorder of the magnetic ions.

preprint2020arXiv

Study of polycrystalline bulk Sr$_3$OsO$_6$ double-perovskite insulator: comparison with 1000 K ferromagnetic epitaxial films

Polycrystalline Sr$_3$OsO$_6$, which is an ordered double-perovskite insulator, is synthesized via solid-state reaction under high-temperature and high-pressure conditions of 1200 $^\circ$C and 6 GPa. The synthesis enables us to conduct a comparative study of the bulk form of Sr$_3$OsO$_6$ toward revealing the driving mechanism of 1000 K ferromagnetism, which has recently been discovered for epitaxially grown Sr$_3$OsO$_6$ films. Unlike the film, the bulk is dominated by antiferromagnetism rather than ferromagnetism. Therefore, robust ferromagnetic order appears only when Sr$_3$OsO$_6$ is under the influence of interfaces. A specific heat capacity of 39.6(9) 10$^{-3}$ J mol$^{-1}$ K$^{-2}$ is found at low temperatures ($<$17 K). This value is remarkably high, suggesting the presence of possible fermionic-like excitations at the magnetic ground state. Although the bulk and film forms of Sr$_3$OsO$_6$ share the same lattice basis and electrically insulating state, the magnetism is entirely different between them.