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Researcher profile

Hai Jun Cho

Hai Jun Cho contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-ph

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Published work

5 published item(s)

preprint2020arXiv

Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1-xSrxSnO3 solid solution films

La-doped ASnO3 (A = Ba, Sr) have great potential as advanced transparent oxide semiconductors due to their large optical bandgap and relatively high electron mobility. The bandgap of Ba1-xSrxSnO3 solid solution increases from 3.2 eV (BaSnO3) to 4.6 eV (SrSnO3) with x. However, the increase in the bandgap is accompanied by reductions in the electrical conductivity. The versatility in the changes in the electrical properties are not trivial, and the property optimization has been challenging. Here we propose a simple metric for quantifying the transport properties of ASnO3. We investigated the electron/thermal transport properties of Ba1-xSrxSnO3 solid solution films and their relationship with the lattice distortion. The results suggest that the all transport properties of Ba1-xSrxSnO3 are dominated by the lattice distortion. This phenomenon is attributed to the distortions in the SnO6 octahedron, which consists the conduction band.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electric field thermopower modulation analyses of the operation mechanism of transparent amorphous SnO$_2$ thin-film transistor

Transparent amorphous oxide semiconductors (TAOSs) based transparent thin-film transistors (TTFTs) with high field effect mobility are essential for developing advanced flat panel displays. Among TAOSs, amorphous (a-) SnO$_2$ has several advantages against current a-InGaZnO4 such as higher field effect mobility and being indium free. Although a-SnO$_2$ TTFT has been demonstrated several times, the operation mechanism has not been clarified thus far due to the strong gas sensing characteristics of SnO$_2$. Here we clarify the operation mechanism of a-SnO$_2$ TTFT by electric field thermopower modulation analyses. We prepared a bottom-gate top-contact type TTFT using 4.2-nm-thick a-SnO$_2$ as the channel without any surface passivation. The effective thickness of the conducting channel was ~1.7 + - 0.4 nm in air and in vacuum, but a large threshold gate voltage shift occurred in different atmospheres; this is attributed to carrier depletion near at the top surface (~2.5 nm) of the a-SnO$_2$ due to its interaction with the gas molecules and the resulting shift in the Fermi energy. The present results would provide a fundamental design concept to develop a-SnO$_2$ TTFT.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding ~3000 S cm-1

La-doped SrSnO3 (LSSO) is known as one of deep-ultraviolet (DUV)-transparent conducting oxides with an energy bandgap of ~4.6 eV. Since LSSO can be grown heteroepitaxially on more wide bandgap substrates such as MgO (Eg ~7.8 eV), LSSO is considered to be a good candidate as a DUV-transparent electrode. However, the electrical conductivity of LSSO films are below 1000 S cm^-1, most likely due to the low solubility of La ion in the LSSO lattice. Here we report that high electrically conducting (>3000 S cm^-1) LSSO thin films with an energy bandgap of ~4.6 eV can be fabricated by pulsed laser deposition on MgO substrate followed by a simple annealing in vacuum. From the X-ray diffraction and the scanning transmission electron microscopy analyses, we found that lateral grain growth occurred during the annealing, which improved the activation rate of La ion, leading to a significant improvement of carrier concentration (3.26 x 10^20 cm^-3) and Hall mobility (55.8 cm^2 V^-1 s^-1). The present DUV-transparent oxide semiconductor would be useful as a transparent electrode for developing optoelectronic devices, which transmit and/or emit DUV-light.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO3

Transparent oxide semiconductors (TOSs) showing both high visible transparency and high electron mobility have attracted great attention towards the realization of advanced optoelectronic devices. La-doped BaSnO3 (LBSO) is one of the most promising TOSs because its single crystal exhibits a high electron mobility. However, in the LBSO films, it is very hard to obtain high mobility due to the threading dislocations, which are originated from the lattice mismatch between the film and the substrate. Therefore, many researchers have tried to improve the mobility by inserting a buffer layer. While the buffer layers increased the electron mobilities, this approach leaves much to be desired since it involves a two-step film fabrication process and the enhanced mobility values are still significantly lower than single crystal values. We show herein that the electron mobility of LBSO films can be improved without inserting any buffer layers if the films are grown under highly oxidative ozone (O3) atmospheres. The O3 environments relaxed the LBSO lattice and reduced the formation of Sn2+ states, which are known to suppress the electron mobility in LBSO. The resultant O3-LBSO films showed improved mobility values up to 115 cm2 V-1 s-1, which is among the highest in LBSO films on SrTiO3 substrates and comparable to LBSO films with buffer layers.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Oxygen vacancy driven mobility enhancement in epitaxial La-doped BaSnO3 from vacuum annealing

Wide bandgap (~3.1 eV) La-doped BaSnO3 (LBSO) has attracted increasing attention as one of the transparent oxide semiconductors since its bulk single crystal shows a high carrier mobility (~320 cm2 V-1 s-1) with a high carrier concentration (~10^20 cm-3). For this reason, many researchers have fabricated LBSO epitaxial films thus far, but the obtainable carrier mobility is substantially low compared to that of single crystals due to the formation of the lattice/structural defects. Here we report that the mobility suppression in LBSO films can be lifted by a simple vacuum annealing process. The vacuum annealing of the LBSO films on MgO substrate increased the carrier concentrations due to the oxygen vacancy formation, which leads to simultaneous lateral grain growth. As a result, the carrier mobility was greatly improved by the vacuum annealing, which does not occur after heat treatment in air. These results expand our current knowledge on the point defect formation in epitaxial LBSO films and show that vacuum annealing is a powerful tool for enhancing the mobility values of LBSO films.

0 citations0 reviewsNo code linkedOpen access