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Anup V. Sanchela

Anup V. Sanchela appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

9 published item(s)

preprint2019arXiv

High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding ~3000 S cm-1

La-doped SrSnO3 (LSSO) is known as one of deep-ultraviolet (DUV)-transparent conducting oxides with an energy bandgap of ~4.6 eV. Since LSSO can be grown heteroepitaxially on more wide bandgap substrates such as MgO (Eg ~7.8 eV), LSSO is considered to be a good candidate as a DUV-transparent electrode. However, the electrical conductivity of LSSO films are below 1000 S cm^-1, most likely due to the low solubility of La ion in the LSSO lattice. Here we report that high electrically conducting (>3000 S cm^-1) LSSO thin films with an energy bandgap of ~4.6 eV can be fabricated by pulsed laser deposition on MgO substrate followed by a simple annealing in vacuum. From the X-ray diffraction and the scanning transmission electron microscopy analyses, we found that lateral grain growth occurred during the annealing, which improved the activation rate of La ion, leading to a significant improvement of carrier concentration (3.26 x 10^20 cm^-3) and Hall mobility (55.8 cm^2 V^-1 s^-1). The present DUV-transparent oxide semiconductor would be useful as a transparent electrode for developing optoelectronic devices, which transmit and/or emit DUV-light.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO3

Transparent oxide semiconductors (TOSs) showing both high visible transparency and high electron mobility have attracted great attention towards the realization of advanced optoelectronic devices. La-doped BaSnO3 (LBSO) is one of the most promising TOSs because its single crystal exhibits a high electron mobility. However, in the LBSO films, it is very hard to obtain high mobility due to the threading dislocations, which are originated from the lattice mismatch between the film and the substrate. Therefore, many researchers have tried to improve the mobility by inserting a buffer layer. While the buffer layers increased the electron mobilities, this approach leaves much to be desired since it involves a two-step film fabrication process and the enhanced mobility values are still significantly lower than single crystal values. We show herein that the electron mobility of LBSO films can be improved without inserting any buffer layers if the films are grown under highly oxidative ozone (O3) atmospheres. The O3 environments relaxed the LBSO lattice and reduced the formation of Sn2+ states, which are known to suppress the electron mobility in LBSO. The resultant O3-LBSO films showed improved mobility values up to 115 cm2 V-1 s-1, which is among the highest in LBSO films on SrTiO3 substrates and comparable to LBSO films with buffer layers.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Oxygen vacancy driven mobility enhancement in epitaxial La-doped BaSnO3 from vacuum annealing

Wide bandgap (~3.1 eV) La-doped BaSnO3 (LBSO) has attracted increasing attention as one of the transparent oxide semiconductors since its bulk single crystal shows a high carrier mobility (~320 cm2 V-1 s-1) with a high carrier concentration (~10^20 cm-3). For this reason, many researchers have fabricated LBSO epitaxial films thus far, but the obtainable carrier mobility is substantially low compared to that of single crystals due to the formation of the lattice/structural defects. Here we report that the mobility suppression in LBSO films can be lifted by a simple vacuum annealing process. The vacuum annealing of the LBSO films on MgO substrate increased the carrier concentrations due to the oxygen vacancy formation, which leads to simultaneous lateral grain growth. As a result, the carrier mobility was greatly improved by the vacuum annealing, which does not occur after heat treatment in air. These results expand our current knowledge on the point defect formation in epitaxial LBSO films and show that vacuum annealing is a powerful tool for enhancing the mobility values of LBSO films.

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preprint2015arXiv

Cu2ZnSnS4 Films using an Eco-friendly Direct Liquid Coating Approach for Solar Cell Applications

Cu2ZnSnS4 (CZTS) is a promising candidate as an absorber material for thin film solar cells. The reported wet chemical synthesis approaches often have a high environmental impact due to the usage of abrasive solvents such as hydrazines, hydroxylamines, etc. We report an eco-friendly solvent based approach for making CZTS thin films with desirable absorption characteristics for solar cell applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effect of Sb deficiency on the thermoelectric properties of Zn4Sb3

We have investigated the effect of Sb-deficiency on the thermoelectric figure of merit (zT) of Zn4Sb3 prepared by solid state reaction route. At high temperatures, the Seebeck coefficient (S) and electrical conductivity (σ) increase with increase in Sb deficiency whereas the thermal conductivity (\k{appa}) decreases giving rise to an increase in the overall zT value. The observations suggest that creation of vacancies could be an effective route in improving the thermoelectric properties of Zn4Sb3 system. This coupled to nanostructuring strategy could lead to the ultimate maximum value of zT in this system for high temperature thermoelectric applications.

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preprint2015arXiv

Enhancement in thermoelectric properties of FeSb2 by Sb site deficiency

We report a strategy based on introduction of point defects for improving the thermoelectric properties of FeSb2, a promising candidate for low temperature applications. Introduction of Sb deficiency to the tune of 20% leads to enhancement in the values of electrical conductivity (σ) and Seebeck coefficient (S) accompanied with a concomitant suppression in lattice thermal conductivity (\k{appa}lat) values in samples prepared using conventional solid state reaction route. These observations in polycrystalline FeSb2-x provides ample motivation for a dedicated exploration of thermoelectric behavior of the corresponding single crystalline as well as hot-pressed polycrystalline counterparts.

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preprint2015arXiv

Improvement in thermoelectric properties by tailoring at In and Te site in In2Te5

We study role of site substitutions at In and Te site in In2Te5 on the thermoelectric behavior. Single crystals with compositions In2(Te1-xSex)5 (x = 0, 0.05, 0.10) and Fe0.05In1.95(Te0.90Se0.10)5 were prepared using modified Bridgman-Stockbarger technique. Electrical and thermal transport properties of these single crystals were measured in the temperature range 6 - 395 K. A substantial decrease in thermal conductivity is observed in Fe substituted samples attributed to the enhanced phonon point-defect scattering. Marked enhancement in Seebeck coefficient S along with a concomitant suppression of electrical resistivity \r{ho} is observed in Se substituted single crystals. An overall enhancement of thermoelectric figure of merit (zT) by a factor of 310 is observed in single crystals of Fe0.05In1.95(Te0.90Se0.10)5 compared to the parent In2Te5 single crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Nanostructured Zinc Oxide as a Prospective Room Temperature Thermoelectric Material

Nanostructured Zinc oxide (ZnO) was synthesized via a ball milling for 10 hours using high energy planetary ball mill. Phase purity and homogeneity of all the samples have been investigated by X-ray diffraction (XRD) and Field Emission Scanning Electron Microscopy (FE-SEM). All the diffraction peaks can be indexed to the hexagonal phase ZnO with hexagonal symmetry (space group P63mc). Average crystallite size was observed to be 20 nm. There was a remarkable suppression in thermal conductivity (κ) compared to the bulk values by a factor of ~50 at room temperature. This suggests to the possibility of using nanostructured ZnO as a prospective room temperature thermoelectric material.

0 citations0 reviewsNo code linkedOpen access