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Hadj M. Benia

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2020arXiv

Bulk cyclotron resonance in the topological insulator Bi2Te3

We investigated magneto-optical response of undoped Bi2Te3 films in the terahertz frequency range (0.3 - 5.1 THz, 10 - 170 cm-1) in magnetic fields up to 10 T. The optical transmission, measured in the Faraday geometry, is dominated by a broad Lorentzian-shaped mode, whose central frequency linearly increases with applied field. In zero field, the Lorentzian is centered at zero frequency, representing hence the free-carrier Drude response. We interpret the mode as a cyclotron resonance (CR) of free carriers in Bi2Te3. Because the mode's frequency position follows a linear magnetic-field dependence and because undoped Bi2Te3 is known to possess an appreciable number of bulk carriers, we associate the mode with a bulk CR. In addition, the cyclotron mass obtained from our measurements fits well the literature data on the bulk effective mass in Bi2Te3. Interestingly, the width of the CR mode demonstrates a behavior non-monotonous in field. We propose that the CR width is defined by two competing factors: impurity scattering, which rate decreases in increasing field, and electron-phonon scattering, which rate exhibits the opposite behavior.

preprint2015arXiv

Surface band structure of $\text{Bi}_{1-x}\text{Sb}_{x}$(111)

Theoretical and experimental studies agree that $\text{Bi}_{1-x}\text{Sb}_{x}$ ($0.07 \leq x \leq 0.21$) to be a three-dimensional topological insulator. However, there is still a debate on the corresponding $\text{Bi}_{1-x}\text{Sb}_{x}$(111) surface band structure. While three spin polarized bands have been claimed experimentally, theoretically, only two surface bands appear, with the third band being attributed to surface imperfections. Here, we address this controversy using angle-resolved photoemission spectroscopy (ARPES) on $\text{Bi}_{1-x}\text{Sb}_{x}$ films. To minimize surface imperfections, we have optimized the sample growth recipe. We have measured the evolution of the surface band structure of $\text{Bi}_{1-x}\text{Sb}_{x}$ with $x$ increasing gradually from $x = 0$ to $x = 0.6$. Our ARPES data show better agreement with the theoretical calculations, where the system is topologically non-trivial with two surface bands.

preprint2013arXiv

A Natural Topological Insulator

The earth's crust and outer space are rich sources of technologically relevant materials which have found application in a wide range of fields. Well-established examples are diamond, one of the hardest known materials, or graphite as a suitable precursor of graphene. The ongoing drive to discover novel materials useful for (opto)electronic applications has recently drawn strong attention to topological insulators. Here, we report that Kawazulite, a mineral with the approximate composition Bi$_2$(Te,Se)$_2$(Se,S), represents a naturally occurring topological insulator whose electronic properties compete well with those of its synthetic counterparts. Kawazulite flakes with a thickness of a few tens of nanometers were prepared by mechanical exfoliation. They exhibit a low intrinsic bulk doping level and correspondingly a sizable mobility of surface state carriers of more than $1000 \text{cm}^2/(\text{V s})$ at low temperature. Based on these findings, further minerals which due to their minimized defect densities display even better electronic characteristics may be identified in the future.

preprint2011arXiv

Reactive chemical doping of the $Bi_2 Se_3$ topological insulator

Using angle resolved photoemission spectroscopy we studied the evolution of the surface electronic structure of the topological insulator $\text{Bi}_2\text{Se}_3$ as a function of water vapor exposure. We find that a surface reaction with water induces a band bending shifting the Dirac point deep into the occupied states and creating quantum well states with a strong Rashba-type splitting. The surface is thus not chemically inert, but the topological state remains protected. The band bending is traced back to Se-abstraction leaving positively charged vacancies at the surface. Due to the presence of water vapor, a similar effect takes place when $\text{Bi}_2\text{Se}_3$ crystals are left in vacuum or cleaved in air, which likely explains the aging effect observed in the $\text{Bi}_2\text{Se}_3$ band structure.