Researcher profile

Hadi Arjmandi-Tash

Hadi Arjmandi-Tash contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2014arXiv

Collapse of superconductivity in a hybrid tin-graphene Josephson junction array

When a Josephson junction array is built with hybrid superconductor/metal/superconductor junctions, a quantum phase transition from a superconducting to a two-dimensional (2D) metallic ground state is predicted to happen upon increasing the junction normal state resistance. Owing to its surface-exposed 2D electron gas and its gate-tunable charge carrier density, graphene coupled to superconductors is the ideal platform to study the above-mentioned transition between ground states. Here we show that decorating graphene with a sparse and regular array of superconducting nanodisks enables to continuously gate-tune the quantum superconductor-to-metal transition of the Josephson junction array into a zero-temperature metallic state. The suppression of proximity-induced superconductivity is a direct consequence of the emergence of quantum fluctuations of the superconducting phase of the disks. Under perpendicular magnetic field, the competition between quantum fluctuations and disorder is responsible for the resilience at the lowest temperatures of a superconducting glassy state that persists above the upper critical field. Our results provide the entire phase diagram of the disorder and magnetic field-tuned transition and unveil the fundamental impact of quantum phase fluctuations in 2D superconducting systems.

preprint2012arXiv

Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper

By limiting the carbon segregation at the copper surface defects, a pulsed chemical vapor deposition method for single layer graphene growth is shown to inhibit the formation of few-layer regions, leading to a fully single-layered graphene homogeneous at the centimeter scale. Graphene field-effect devices obtained after transfer of pulsed grown graphene on oxidized silicon exhibit mobilities above 5000 cm^2.V^-1.s^-1.