Researcher profile

Amina Kimouche

Amina Kimouche contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2013arXiv

Modulating charge density and inelastic optical response in graphene by atmospheric pressure localized intercalation through wrinkles

The intercalation of an oxide barrier between graphene and its metallic substrate for chem- ical vapor deposition is a contamination-free alternative to the transfer of graphene to dielectric supports, usually needed for the realization of electronic devices. Low-cost pro- cesses, especially at atmospheric pressure, are desirable but whether they are achievable remains an open question. Combining complementary microscopic analysis, providing structural, electronic, vibrational, and chemical information, we demonstrate the spontaneous reactive intercalation of 1.5 nm-thick oxide ribbons between graphene and an iridium substrate, at atmospheric pressure and room temperature. We discover that oxygen-containing molecules needed for forming the ribbons are supplied through the graphene wrinkles, which act as tunnels for the efficient diffusion of molecules entering their free end. The intercalated oxide ribbons are found to modify the graphene-support interaction, leading to the formation of quasi-free-standing high quality graphene whose charge density is modulated in few 10-100 nm-wide ribbons by a few 10^12 cm-2, where the inelastic optical response is changed, due to a softening of vibrational modes - red-shifts of Raman G and 2D bands by 6 and 10 cm-1, respectively.

preprint2012arXiv

Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper

By limiting the carbon segregation at the copper surface defects, a pulsed chemical vapor deposition method for single layer graphene growth is shown to inhibit the formation of few-layer regions, leading to a fully single-layered graphene homogeneous at the centimeter scale. Graphene field-effect devices obtained after transfer of pulsed grown graphene on oxidized silicon exhibit mobilities above 5000 cm^2.V^-1.s^-1.

preprint2011arXiv

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire

Uniform single layer graphene was grown on single-crystal Ir films a few nanometers thick which were prepared by pulsed laser deposition on sapphire wafers. These graphene layers have a single crystallographic orientation and a very low density of defects, as shown by diffraction, scanning tunnelling microscopy, and Raman spectroscopy. Their structural quality is as high as that of graphene produced on Ir bulk single crystals, i.e. much higher than on metal thin films used so far.