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Hadar Steinberg

Hadar Steinberg appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

8 published item(s)

preprint2022arXiv

Interior and edge magnetization in thin exfoliated CrGeTe3 films

CrGeTe3 (CGT) is a semiconducting vdW ferromagnet shown to possess magnetism down to a two-layer thick sample. Although CGT is one of the leading candidates for spintronics devices, a comprehensive analysis of CGT thickness dependent magnetization is currently lacking. In this work, we employ scanning SQUID-on-tip (SOT) microscopy to resolve the magnetic properties of exfoliated CGT flakes at 4.2 K. Combining transport measurements of CGT/NbSe2 samples with SOT images, we present the magnetic texture and hysteretic magnetism of CGT, thereby matching the global behavior of CGT to the domain structure extracted from local SOT magnetic imaging. Using this method, we provide a thickness dependent magnetization state diagram of bare CGT films. No zero-field magnetic memory was found for films thicker than 10 nm and hard ferromagnetism was found below that critical thickness. Using scanning SOT microscopy, we identify a unique edge magnetism, contrasting the results attained in the CGT interior.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Hidden spin-texture at topological domain walls drive exchange bias in a Weyl semimetal

Exchange bias is a phenomenon critical to solid-state technologies that require spin valves or non-volatile magnetic memory. The phenomenon is usually studied in the context of magnetic interfaces between antiferromagnets and ferromagnets, where the exchange field of the former acts as a means to pin the polarization of the latter. In the present study, we report an unusual instance of this phenomenon in the topological Weyl semimetal Co3Sn2S2, where the magnetic interfaces associated with domain walls suffice to bias the entire ferromagnetic bulk. Remarkably, our data suggests the presence of a hidden order parameter whose behavior can be independently tuned by applied magnetic fields. For micron-size samples, the domain walls are absent, and the exchange bias vanishes, suggesting the boundaries are a source of pinned uncompensated moment arising from the hidden order. The novelty of this mechanism suggests exciting opportunities lie ahead for the application of topological materials in spintronic technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum-Dot Assisted Spectroscopy of Degeneracy-Lifted Landau Levels in Graphene

Energy spectroscopy of strongly interacting phases requires probes which minimize screening while retaining spectral resolution and local sensitivity. Here we demonstrate that such probes can be realized using atomic sized quantum dots bound to defects in hexagonal Boron Nitride tunnel barriers, placed at nanometric distance from graphene. With dot energies capacitively tuned by a planar graphite electrode, dot-assisted tunneling becomes highly sensitive to the graphene excitation spectrum. The spectra track the onset of degeneracy lifting with magnetic field at the ground state, and at unoccupied exited states, revealing symmetry-broken gaps which develop steeply with magnetic field - corresponding to Landé $g$ factors as high as 160. Measured up to $B = 33$ T, spectra exhibit a primary energy split between spin-polarized excited states, and a secondary spin-dependent valley-split. Our results show that defect dots probe the spectra while minimizing local screening, and are thus exceptionally sensitive to interacting states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tunneling in graphene-topological insulator hybrid devices

Hybrid graphene-topological insulator (TI) devices were fabricated using a mechanical transfer method and studied via electronic transport. Devices consisting of bilayer graphene (BLG) under the TI Bi$_2$Se$_3$ exhibit differential conductance characteristics which appear to be dominated by tunneling, roughly reproducing the Bi$_2$Se$_3$ density of states. Similar results were obtained for BLG on top of Bi$_2$Se$_3$, with 10-fold greater conductance consistent with a larger contact area due to better surface conformity. The devices further show evidence of inelastic phonon-assisted tunneling processes involving both Bi$_2$Se$_3$ and graphene phonons. These processes favor phonons which compensate for momentum mismatch between the TI $Γ$ and graphene $K, K'$ points. Finally, the utility of these tunnel junctions is demonstrated on a density-tunable BLG device, where the charge-neutrality point is traced along the energy-density trajectory. This trajectory is used as a measure of the ground-state density of states.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice

We report on electronic transport measurements of dual-gated nano-devices of the low-carrier density topological insulator Bi1.5Sb0.5Te1.7Se1.3. In all devices the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through the bulk, indicating finite capacitive coupling between the surface states. A charging model allows us to use the penetrating electric field as a measurement of the inter-surface capacitance $C_{TI}$ and the surface state energy-density relationship $μ$(n), which is found to be consistent with independent ARPES measurements. At high magnetic fields, increased field penetration through the surface states is observed, strongly suggestive of the opening of a surface state band gap due to broken time-reversal symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films

We study coherent transport in density tunable micro-devices patterned from thin films of the topological insulator (TI) Bi2Se3. The devices exhibit pronounced electric field effect, including ambipolar modulation of the resistance with an on/off ratio of 500%. We show that the weak antilocalization (WAL) correction to conductance is sensitive to the number of coherently coupled channels, which in a TI includes the top and bottom surface and the bulk carriers. These are separated into coherently independent channels by the application of gate voltage and at elevated temperatures. Our results are consistent with a model where channel separation is determined by a competition between the coherence time and surface-bulk scattering time.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Ambipolar Electric Field Effect in Metallic Bi2Se3

Topological insulators (TIs) constitute a new class of materials with unique properties resulting from the relativistic-like character and topological protection of their surface states. Theory predicts these to exhibit a rich variety of physical phenomena such as anomalous magneto-electric coupling and Majorana excitations. Although TI surface states have been detected in Bi-based compounds by ARPES and STM techniques, electrical control over their density, required for most transport experiments, remains a challenge. Existing materials are heavily doped in the bulk, thus preventing electrical tunability of the surface states and their integration into topological quantum electronic devices. Here we show that electronic transport in metallic Bi2Se3 nanoscale devices can be controlled by tuning the surface density via the electric field effect. By choosing an appropriate high-k dielectric, we are able to shift the Fermi energy through the charge neutrality point of the surface states, resulting in ambipolar transport characteristics reminiscent of those observed in graphene. Combining magnetotransport, field effect, and geometry dependent experiments, we provide transport measurements of the surface state mobility, and identify likely scattering mechanisms by measuring its temperature dependence.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices

Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material. Here we report on electronic transport measurements on thin (<100 nm) Bi2Se3 devices and show that the density of the surface states can be modulated via the electric field effect by using a top-gate with a high-k dielectric insulator. The conductance dependence on geometry, gate voltage, and temperature all indicate that transport is governed by parallel surface and bulk contributions. Moreover, the conductance dependence on top-gate voltage is ambipolar, consistent with tuning between electrons and hole carriers at the surface.

0 citations0 reviewsNo code linkedOpen access