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Researcher profile

H. Y. Lv

H. Y. Lv contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

9 published item(s)

preprint2016arXiv

Enhancing the thermoelectric performance of a HfS2 monolayer through valley engineering

The electronic, phonon, and thermoelectric properties of a two-dimensional HfS2 monolayer are investigated by using the first-principles calculations combined with the Boltzmann transport theory. The band valleys of the HfS2 monolayer can be effectively tuned by the applied biaxial strain. The Seebeck coefficient and therefore the peak value of the power factor (with the relaxation time inserted) increase when the degeneracy of the band valleys is increased by the strain. When no strain is applied, the HfS2 monolayer is an excellent n-type thermoelectric material, while the thermoelectric performance of the p-type doped one is poor. The applied tensile strain of 6% can increase the room-temperature ZT value of the p-type doped system to 3.67, which is five times larger than that of the unstrained one. The much more balanced ZT values of the p- and n-type doping are favorable for fabrication of both p- and n-legs of thermoelectric modules. Our results indicate that the thermoelectric performance of the HfS2 monolayer can be greatly improved by the valley engineering through the method of strain.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Manipulating charge-density-wave in $1T$-TaS$_{2}$ by charge carrier doping: A first-principles investigation

The transition metal dichalcogenide (TMD) $1T$-TaS$_{2}$ exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier doping. Here we simulate by first-principles calculations the carrier doping effect on CCDW in $1T$-TaS$_{2}$. We investigate the charge doping effects on the electronic structures and phonon instabilities of $1T$ structure and analyze the doping induced energy and distortion ratio variations in CCDW structure. We found that both in bulk and monolayer $1T$-TaS$_{2}$, CCDW is stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric field induced hole doping increases the energy of CCDW, so that the system transforms to NCCDW or similar metastable state. On the other hand, even the CCDW distortion is more stable upon in-plain electric field induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from CCDW to nearly commensurate (NC) CDW or similar metastable state. We also estimate that hole doping can introduce potential superconductivity with $T_{c}$ of $6\sim7$ K. Controllable switching of different states such as CCDW/Mott insulating state, metallic state, and even the superconducting state can be realized in $1T$-TaS$_{2}$, which makes the novel material have very promising applications in the future electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Strain-induced enhancement of thermoelectric performance in a ZrS2 monolayer

The increase of a thermoelectric material's figure of merit (ZT value) is limited by the interplay of the transport coefficients. Here we report the greatly enhanced thermoelectric performance of a ZrS2 monolayer by the biaxial tensile strain, due to the simultaneous increase of the Seebeck coefficient and decrease of the thermal conductivity. Based on the first-principles calculations combined with the Boltzmann transport theory, we predict the band gap of the ZrS2 monolayer can be effectively engineered by the strain and the Seebeck coefficient is significantly increased. The thermal conductivity is reduced by the applied tensile strain due to the phonon softening. At the strain of 6%, the maximal ZT value of 2.4 is obtained for the p-type doped ZrS2 monolayer at 300 K, which is 4.3 times larger than that of the unstrained system.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Disorder suppressed charge-density-wave and its origin in 1T-TaSe2-xTex

In the sake of connecting the charge-density-wave (CDW) of TaSe$_2$ and single-\emph{\textbf{q}} CDW-type distortion of TaTe$_2$, we present an overall electronic phase diagram of 1\emph{T}-TaSe$_{2-x}$Te$_x$ ($0 \leq x \leq 2$). In the experimentally prepared single crystals, the CDW is completely suppressed as $0.5 < x < 1.5$, while superconductivity emerges as $0.2 < x < 1.2$. Theoretically, similar to 1\emph{T}-TaSe$_2$ and 1\emph{T}-TaTe$_2$, the hypothetic 1\emph{T}-TaSeTe with ordered Se/Ta/Te stacking shows instability in the phonon dispersion, indicating the presence of CDW in the ideally ordered sample. The contradictory between experimental and theoretical results suggests that the CDW is suppressed by disorder in 1\emph{T}-TaSe$_{2-x}$Te$_x$. The formation and suppression of CDW are found to be independent with Fermi surface nesting based on the generated electron susceptibility calculations. The calculation of phonon linewidth suggests the strong \textbf{\emph{q}}-dependent electron-phonon coupling induced period-lattice-distortion (PLD) should be related to our observation: The doping can largely distort the TaX$_6$ (X = Se, Te) octahedra, which are disorderly distributed. The resulted puckered Ta-Ta layers are not compatible with the two-dimensional PLD. Therefore, CDW is suppressed in 1\emph{T}-TaSe$_{2-x}$Te$_x$. Our results offer an indirect evidence that PLD, which can be influenced by strong disorder, is the origin of CDW in the system.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strain-controlled switch between ferromagnetism and antiferromagnetism in 1T-CrX2 (X = Se, Te) monolayers

We report on the strain-induced switch between ferromagnetic (FM) and antiferromagnetic (AFM) orderings in 1T-CrX2 (X = Se, Te) monolayers based on the first-principles calculations. The CrSe2 and CrTe2 monolayers without strains are found to be AFM and FM, respectively. Under the biaxial tensile strain, the CrSe2 monolayer tends to be FM when the strain is larger than 2%. The FM state is further stabilized when the strain is increased. Moreover, the CrSe2 monolayer changes to be half-metallic when the tensile strain is larger than 10%. While for the CrTe2 monolayer, the critical strain at which the transition between the FM and AFM states occurs is compressive, of -1%. Relatively small tensile strains of 4% and 2%, respectively, can enhance the Curie temperature of CrSe2 and CrTe2 monolayers above the room temperature. The strain-induced switch between the FM and AFM states in CrSe2 (CrTe2) monolayer can be understood by the competition between the AFM Cr-Cr direct exchange and FM Cr-Se(Te)-Cr superexchange interactions. The tunable and attractive magnetic and electronic properties controlled by the flexible strain are desirable for the future nanoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electron-doped phosphorene: A potential monolayer superconductor

We predict by first-principles calculations that the electron-doped phosphorene is a potential BCS-like superconductor. The stretching modes at the Brillouin-zone center are remarkably softened by the electron-doping, which results in the strong electron-phonon coupling. The superconductivity can be introduced by a doped electron density ($n_{2D}$) above $1.3 \times10^{14}$ cm$^{-2}$, and may exist over the liquid helium temperature when $n_{2D}>2.6 \times10^{14}$ cm$^{-2}$. The maximum critical temperature is predicted to be higher than 10 K. The superconductivity of phosphorene will significantly broaden the applications of this novel material.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Enhanced thermoelectric performance of phosphorene by strain-induced band convergence

The newly emerging monolayer phosphorene was recently predicted to be a promising thermoelectric material. In this work, we propose to further enhance the thermoelectric performance of phosphorene by the strain-induced band convergence. The effect of the uniaxial strain on the thermoelectric properties of phosphorene was investigated by using the first-principles calculations combined with the semi-classical Boltzmann theory. When the zigzag-direction strain is applied, the Seebeck coefficient and electrical conductivity in zigzag direction can be greatly enhanced simultaneously at the critical strain of 5% where the band convergence is achieved. The largest ZT value of 1.65 at 300 K is then achieved conservatively estimated by using the bulk lattice thermal conductivity. When the armchair-direction strain of 8% is applied, the room-temperature ZT value can reach 2.12 in the armchair direction of phosphorene. Our results indicate that strain induced band convergence could be an effective method to enhance the thermoelectric performance of phosphorene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Large thermoelectric power factors in black phosphorus and phosphorene

The electronic properties of the layered black phosphorus (black-P) and its monolayer counterpart phosphorene are investigated by using the first-principles calculations based on the density functional theory (DFT). The room-temperature electronic transport coefficients are evaluated within the semi-classical Boltzmann theory. The electrical conductivity exhibits anisotropic behavior while the Seebeck coefficient is almost isotropic. At the optimal doping level and room temperature, bulk black-P and phosphorene are found to have large thermoelectric power factors of 118.4 and 138.9 μWcm-1K-2, respectively. The maximum dimensionless figure of merit (ZT value) of 0.22 can be achieved in bulk black-P by appropriate n-type doping, primarily limited by the reducible lattice thermal conductivity. For the phosphorene, the ZT value can reach 0.30 conservatively estimated by using the bulk lattice thermal conductivity. Our results suggest that both bulk black-P and phosphorene are potentially promising thermoelectric materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer

The electronic structure of WTe2 bulk and layers are investigated by using the first principles calculations. The perfect electron-hole (n-p) charge compensation and high carrier mobilities are found in WTe2 bulk, which may result in the large and non-saturating magnetoresistance (MR) observed very recently in the experiment [Ali et al., Nature 514, 205 (2014)]. The monolayer and bilayer of WTe2 preserve the semimetallic property, with the equal hole and electron carrier concentrations. Moreover, the very high carrier mobilities are also found in WTe2 monolayer, indicating that the WTe2 monolayer would have the same extraordinary MR effect as the bulk, which could have promising applications in nanostructured magnetic devices.

0 citations0 reviewsNo code linkedOpen access