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Source author record

H. W. Schumacher

H. W. Schumacher appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

17 published item(s)

preprint2015arXiv

Commensurability resonances in two-dimensional magneto-electric lateral superlattices

Hybrid lateral superlattices composed of a square array of antidots and a periodic one-dimensional magnetic modulation are prepared in $\mathrm{Ga[Al]As}$ heterostructures. The two-dimensional electron gases exposed to these superlattices are characterized by magnetotransport experiments in vanishing average perpendicular magnetic fields. Despite the absence of closed orbits, the diagonal magnetoresistivity in the direction perpendicular to the magnetic modulation shows pronounced classical resonances. They are located at magnetic fields where snake trajectories exist which are quasi-commensurate with the antidot lattice. The diagonal magnetoresistivity in the direction of the magnetic modulation increases sharply above a threshold magnetic field and shows no fine structure. The experimental results are interpreted with the help of numerical simulations based on the semiclassical Kubo model.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Lissajous rocking ratchet

Breaking time-reversal symmetry (TRS) in the absence of a net bias can give rise to directed steady-state non-equilibrium transport phenomena such as ratchet effects. Here we present, theoretically and experimentally, the concept of a Lissajous rocking ratchet as an instrument based on breaking TRS. Our system is a semiconductor quantum dot (QD) with periodically modulated dot-lead tunnel barriers. Broken TRS gives rise to single electron tunneling current. Its direction is fully controlled by exploring frequency and phase relations between the two barrier modulations. The concept of Lissajous ratchets can be realized in a large variety of different systems, including nano-electrical, nano-electromechanical or superconducting circuits. It promises applications based on a detailed on-chip comparison of radio-frequency signals.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Influence of sample geometry on inductive damping measurement methods

We study the precession frequency and effective damping of patterned permalloy thin films of different geometry using integrated inductive test structures. The test structures consist of coplanar wave guides fabricated onto patterned permalloy stripes of different geometry. The width, length and position of the permalloy stripe with respect to the center conductor of the wave guide are varied. The precession frequency and effective damping of the different devices is derived by inductive measurements in time and frequency domain in in-plane magnetic fields. While the precession frequencies do not reveal a significant dependence on the sample geometry we find a decrease of the measured damping with increasing width of the permalloy centered underneath the center conductor of the coplanar wave guide. We attribute this effect to an additional damping contribution due to inhomogeneous line broadening at the edges of the permalloy stripes which does not contribute to the inductive signal provided the permalloy stripe is wider than the center conductor. Consequences for inductive determination of the effective damping using such integrated reference samples are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Magneto-thermoelectric figure of merit of Co/Cu multilayers

The switching of the magnetization configurations of giant magnetoresistance multilayer stacks not only changes the electric and thermal conductivities, but also the thermopower. We study the magnetotransport and the magneto-thermoelectric properties of Co/Cu multilayer devices in a lateral thermal gradient. We derive values of the Seebeck coefficient, the thermoelectric figure of merit, and the thermoelectric power factor. The Seebeck coefficient reaches values up to -18 microvolt/K at room temperature and shows a magnetic field dependence up to 28.6 % upon spin reversal. In combination with thermal conductivity data of the same Co/Cu stack, we find a spin dependence of the thermoelectric figure of merit of up to 65 %. Furthermore, a spin dependence of the power factor of up to 110 % is derived.

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preprint2013arXiv

The influence of individual lattice defects on the domain structure in magnetic antidot lattices

We numerically and experimentally investigate the influence of single defects consisting of a missing antidot on the spin configurations in rectangular permalloy antidot lattices. The introduction of such lattice defects leads to the nucleation of complex domain structures after the decay of a saturating magnetic field. Micromagnetic simulations yield four typical domain configurations around the defect having distinct energy densities. The existence of the four spin configurations is confirmed by magnetic force microscopy on antidot lattices containing individual defects.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Towards quantized current arbitrary waveform synthesis

The generation of ac modulated quantized current waveforms using a semiconductor non-adiabatic single electron pump is demonstrated. In standard operation the single electron pump generates a quantized output current of I = ef where e is the charge of the electron and f is the pumping frequency. Suitable frequency modulation of f allows the generation of ac modulated output currents with different characteristics. By sinusoidal and saw tooth like modulation of f accordingly modulated quantized current waveforms with kHz modulation frequencies and peak currents up to 100 pA are obtained. Such ac quantized current sources could find applications ranging from precision ac metrology to on-chip signal generation.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Measurement of heavy-hole spin dephasing in (InGa)As quantum dots

We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the valence band states. The experiments reveal a short spin relaxation time τ_{fast}^{hh} of 27 ns and a second, long spin relaxation time τ_{slow}^{hh} which exceeds the latter by more than one order of magnitude. The two times are attributed to heavy hole spins aligned perpendicular and parallel to the stochastic nuclear magnetic field. Intensity dependent measurements and numerical simulations reveal that the long relaxation time is still obscured by light absorption, despite low laser intensity and large detuning. Off-resonant light absorption causes a suppression of the spin noise signal due to the creation of a second hole entailing a vanishing hole spin polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Classification of super domains and super domain walls in permalloy antidot lattices

We study the remanent domain configurations of rectangular permalloy antidot lattices over a range of lattice parameters. The influence of antidot diameter, antidot spacing, and the aspect ratio of the lattice on the remanent domain configuration are investigated by magnetic force microscopy and supported by micromagnetic simulations. In the remanent state, areas of cells with the same orientation of average magnetization form magnetic super domains separated by super domain walls (SDWs). Two types of SDWs are identified. The first type is characterized by low stray field energy, is linear, and expands over many lattice constants. In contrast the second type shows high stray field energy and is situated at kinks of low energy SDWs. Its width can vary from a minimum of two lattice cells up to several lattice constants, depending on the lattice parameters. The occurrence and structure of these two types of SDWs as function of lattice parameters are classified and discussed in terms of the interplay of stray field and exchange energy.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars

We investigate the spin-dependent Seebeck coefficient and the tunneling magneto thermopower of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ) in the presence of thermal gradients across the MTJ. Thermal gradients are generated by an electric heater on top of the nanopillars. The thermo power voltage across the MTJ is found to scale linearly with the heating power and reveals similar field dependence as the tunnel magnetoresistance. The amplitude of the thermal gradient is derived from calibration measurements in combination with finite element simulations of the heat flux. Based on this, large spin-dependent Seebeck coefficients of the order of (240 \pm 110) \muV/K are derived. From additional measurements on MTJs after dielectric breakdown, a tunneling magneto thermopower up to 90% can be derived for 1.5 nm MgO based MTJ nanopillars.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Tunneling magneto thermo power in magnetic tunnel junction nanopillars

We study the tunneling magneto thermo power (TMTP) in CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars. Thermal gradients across the junctions are generated by a micropatterned electric heater line. Thermo power voltages up to a few tens of \muV between the top and bottom contact of the nanopillars are measured which scale linearly with the applied heating power and hence with the applied temperature gradient. The thermo power signal varies by up to 10 \muV upon reversal of the relative magnetic configuration of the two CoFeB layers from parallel to antiparallel. This signal change corresponds to a large spin-dependent Seebeck coefficient of the order of 100 \muV/K and a large TMTP change of the tunnel junction of up to 90%.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Constructive role of non-adiabaticity for quantized charge pumping

We investigate a recently developed scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been shown theoretically that non-adiabaticity is fundamentally required to realize single-parameter pumping, while in previous multi-parameter pumping schemes it caused unwanted and less controllable currents. In this paper we demonstrate experimentally the constructive and destructive role of non-adiabaticity by analysing the pumping current over a broad frequency range.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Generation of energy selective excitations in quantum Hall edge states

We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.g. of excitations and relaxation processes in QH edge states.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Parameter dependence of resonant spin torque magnetization reversal

We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunnelling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modelled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Plasmon electron-hole resonance in epitaxial graphene

The quasiparticle dynamics of the sheet plasmons in epitaxially grown graphene layers on SiC(0001) have been studied systematically as a function of temperature, intrinsic defects, influence of multilayers and carrier density. The opening of the inter-band loss channel appears as a characteristic upward shift in the plasmon dispersion and a dip in the width of the loss peak, which is explained as a resonance effect in the formation of electron-hole pairs. Despite the existence of strong electronic correlations, the plasmon dispersion can be quantitatively described within the framework of a nearly free electron gas.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Synchronized single electron emission from dynamical quantum dots

We study synchronized quantized charge pumping through several dynamical quantum dots (QDs) driven by a single time modulated gate signal. We show that the main obstacle for synchronization being the lack of uniformity can be overcome by operating the QDs in the decay cascade regime. We discuss the mechanism responsible for lifting the stringent uniformity requirements. This enhanced functionality of dynamical QDs might find applications in nanoelectronics and quantum metrology.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Ballistic bit addressing in a magnetic memory cell array

A ringing free bit addressing scheme for magnetic memories like MRAM (magnetic random access memory) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select field pulses. Numerical solutions of a single spin model of an MRAM cell show that the pulse parameters can be chosen such that the application of the half select pulse induces a full precessional turn of the magnetization (no switch) whereas the superposition of two half select pulses induces a half precessional turn (switch). With well adapted pulse parameters both fullselect and half-select switching occurs on ballistic trajectories characterized by the absence of ringing after magnetic pulse decay. Such ballistic bit addressing allows ultra high MRAM clock rates. 1

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preprint2005arXiv

Ultra fast bit addressing in a magnetic memory matrix with crossed wire write line geometry

An ultra fast bit addressing scheme for magnetic random access memories (MRAM) in a crossed wire geometry is proposed. In the addressing scheme a word of cells is programmed simultaneously by sub nanosecond field pulses making use of the magnetization precession of the free layer. Single spin simulations of the free layer dynamics show that the pulse parameters for programming an arbitrary word of the array can be chosen such that the magnetization of the cells to be written performs either a half or a full precessional turn during application of the programming pulse depending on the initial and final magnetization orientation of the addressed cells. Such bit addressing scheme leads to a suppression of the magnetization ringing in all cells of the memory array thereby allowing ultra high MRAM write clock rates above 1 GHz.

0 citations0 reviewsNo code linkedOpen access