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H. W. Jiang

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cond-mat.mes-hall cond-mat.str-el

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preprint2020arXiv

High Frequency Microwave Emission of a Tri-layer Magnetic Tunnel Junction in the Absence of External Bias-Magnetic Field

We perform an experimental study of DC current induced microwave emission in a magnetic tunnel junction (MTJ) consisting of three active magnetic layers. For this tri-layer structure, in addition to a conventional bilayer orthogonal MTJ containing a perpendicular free layer and an in-plane fixed layer, a second perpendicular layer has been introduced. We found that the microwave emission frequency induced by spin-transfer torque (STT) can reach as high as 6 GHz in the absence of any applied magnetic field. Moreover, microwave emission is observed for both current polarizations where a redshift is seen with increase in magnitude of current. We discuss spin-dynamics of the observed bi-directional high-frequency emission and the physical origin of the red-shift. The distinct microwave emission properties exhibited in this tri-layer MTJ structure could potentially be useful for future applications in nanoscale spintronics devices such as microwave communication and neuromorphic computing.

preprint2010arXiv

Germanium electrostatic quantum dot with integrated charge detector in an MOS structure

We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the Germanium and an hybrid design with an electron quantum dot and hole transistor for the charge detection. The hole transistor, using with NiGe source and drain contacts, despite the modest low temperature carrier mobility of 450 cm2/Vs, has shown a sensitivity to the dot electric potential sufficient to detect single charges tunneling in and out of the quantum dot. The device is realized with a two level gate stack, with the top level used to attract electrons and the lower one to define the electron confinement potential and accumulate the hole transistor. The possibility to improve the device operation using a Al2O3/SiGe/Ge multilayer for the confinement of electrons at a smoother interface is discussed.

preprint2009arXiv

Measurement of the Spin Relaxation Time of Single Electrons in a Silicon MOS-Based Quantum Dot

We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD has been performed using a charge sensing technique. The spin relaxation times are subsequently measured in the time-domain by a pump-and-probe method. For the QD that contains an unpaired spin, likely only a single electron, we find that T1 depends strongly on the applied magnetic field. Possible mechanisms leading to the observed spin relaxation are discussed.

preprint2009arXiv

Probing Quantum Hall Pseudospin Ferromagnet by Resistively Detected NMR

Resistively Detected Nuclear Magnetic Resonance (RD-NMR) has been used to investigate a two-subband electron system in a regime where quantum Hall pseudo-spin ferromagnetic (QHPF) states are prominently developed. It reveals that the easy-axis QHPF state around the total filling factor $ν=4 $ can be detected by the RD-NMR measurement. Approaching one of the Landau level (LL) crossing points, the RD-NMR signal strength and the nuclear spin relaxation rate $1/T_{1}$ enhance significantly, a signature of low energy spin excitations. However, the RD-NMR signal at another identical LL crossing point is surprisingly missing which presents a puzzle.

preprint2008arXiv

Numerical Studies of Quantum Hall Ferromagnetism in Two-Subband Systems

We carry out a numerical study of the quantum Hall ferromagnetism in a two-subband system using a set of experimental parameters in a recently experiment [X. C. Zhang, I. Martin, and H. W. Jiang, Phys. Rev. B \textbf{74}, 073301 (2006)]. Employing the self-consistence local density approximation for growth direction wave function and the Hartree-Fock theory for the pseudospin anisotropy energy, we are able to account for the easy-axis and easy-plane quantum Hall ferromagnetism observed at total filling factor $ν= 3$ and $ν= 4$, respectively. Our study provides some insight of how the anisotropy energy, which highly depends upon the distribution of growth direction wave functions, determines the symmetry of the quantum Hall ferromagnets.