Researcher profile

H. Uemura

H. Uemura contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Quantum interference between charge excitation paths in a solid state Mott insulator

The competition between electron localization and de-localization in Mott insulators underpins the physics of strongly-correlated electron systems. Photo-excitation, which re-distributes charge between sites, can control this many-body process on the ultrafast timescale. To date, time-resolved studies have been performed in solids in which other degrees of freedom, such as lattice, spin, or orbital excitations come into play. However, the underlying quantum dynamics of bare electronic excitations has remained out of reach. Quantum many-body dynamics have only been detected in the controlled environment of optical lattices where the dynamics are slower and lattice excitations are absent. By using nearly-single-cycle near-IR pulses, we have measured coherent electronic excitations in the organic salt ET-F2TCNQ, a prototypical one-dimensional Mott Insulator. After photo-excitation, a new resonance appears on the low-energy side of the Mott gap, which oscillates at 25 THz. Time-dependent simulations of the Mott-Hubbard Hamiltonian reproduce the oscillations, showing that electronic delocalization occurs through quantum interference between bound and ionized holon-doublon pairs.

preprint2010arXiv

In-situ growth of superconducting NdFeAs(O,F) thin films by Molecular Beam Epitaxy

The recently discovered high temperature superconductor F-doped LaFeAsO and related compounds represent a new class of superconductors with the highest transition temperature (Tc) apart from the cuprates. The studies ongoing worldwide are revealing that these Fe-based superconductors are forming a unique class of materials that are interesting from the viewpoint of applications. To exploit the high potential of the Fe-based superconductors for device applications, it is indispensable to establish a process that enables the growth of high quality thin films. Efforts of thin film preparation started soon after the discovery of Fe-based superconductors, but none of the earlier attempts had succeeded in an in-situ growth of a superconducting film of LnFeAs(O,F) (Ln=lanthanide), which exhibits the highest Tc to date among the Fe-based superconductors. Here, we report on the successful growth of NdFeAs(O,F) thin films on GaAs substrates, which showed well-defined superconducting transitions up to 48 K without the need of an ex-situ heat treatment.