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H. Shtrikman

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cond-mat.mes-hall cond-mat.stat-mech cond-mat.supr-con

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preprint2012arXiv

Pseudospin-Resolved Transport Spectroscopy of the Kondo Effect in a Double Quantum Dot

We report measurements of the Kondo effect in a double quantum dot (DQD), where the orbital states act as pseudospin states whose degeneracy contributes to Kondo screening. Standard transport spectroscopy as a function of the bias voltage on both dots shows a zero-bias peak in conductance, analogous to that observed for spin Kondo in single dots. Breaking the orbital degeneracy splits the Kondo resonance in the tunneling density of states above and below the Fermi energy of the leads, with the resonances having different pseudospin character. Using pseudospin-resolved spectroscopy, we demonstrate the pseudospin character by observing a Kondo peak at only one sign of the bias voltage. We show that even when the pseudospin states have very different tunnel rates to the leads, a Kondo temperature can be consistently defined for the DQD system.

preprint2010arXiv

Coulomb Blockade in an Open Quantum Dot

We report the observation of Coulomb blockade in a quantum dot contacted by two quantum point contacts each with a single fully-transmitting mode, a system previously thought to be well described without invoking Coulomb interactions. At temperatures below 50 mK we observe a periodic oscillation in the conductance of the dot with gate voltage that corresponds to a residual quantization of charge. From the temperature and magnetic field dependence, we infer the oscillations are Mesoscopic Coulomb Blockade, a type of Coulomb blockade caused by electron interference in an otherwise open system.

preprint2010arXiv

Unexpected features of branched flow through high-mobility two-dimensional electron gases

GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable electronic states, and serve as the basis for fast transistors, research on electrons in nanostructures, and prototypes of quantum-computing schemes. All these uses depend on the extremely low levels of disorder in GaAs 2DEGs, with low-temperature mean free paths ranging from microns to hundreds of microns. Here we study how disorder affects the spatial structure of electron transport by imaging electron flow in three different GaAs/AlGaAs 2DEGs, whose mobilities range over an order of magnitude. As expected, electrons flow along narrow branches that we find remain straight over a distance roughly proportional to the mean free path. We also observe two unanticipated phenomena in high-mobility samples. In our highest-mobility sample we observe an almost complete absence of sharp impurity or defect scattering, indicated by the complete suppression of quantum coherent interference fringes. Also, branched flow through the chaotic potential of a high-mobility sample remains stable to significant changes to the initial conditions of injected electrons.

preprint2007arXiv

Interplay of Anisotropy and Disorder in the Doping-Dependent Melting and Glass Transitions of Vortices in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$

We study the oxygen doping dependence of the equilibrium first-order melting and second-order glass transitions of vortices in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$. Doping affects both anisotropy and disorder. Anisotropy scaling is shown to collapse the melting lines only where thermal fluctuations are dominant. Yet, in the region where disorder breaks that scaling, the glass lines are still collapsed. A quantitative fit to melting and replica symmetry breaking lines of a 2D Ginzburg-Landau model further reveals that disorder amplitude weakens with doping, but to a lesser degree than thermal fluctuations, enhancing the relative role of disorder.