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S. Amasha

S. Amasha appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall

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Published work

9 published item(s)

preprint2016arXiv

Cotunneling drag effect in Coulomb-coupled quantum dots

In Coulomb drag, a current flowing in one conductor can induce a voltage across an adjacent conductor via the Coulomb interaction. The mechanisms yielding drag effects are not always understood, even though drag effects are sufficiently general to be seen in many low-dimensional systems. In this Letter, we observe Coulomb drag in a Coulomb-coupled double quantum dot (CC-DQD) and, through both experimental and theoretical arguments, identify cotunneling as essential to obtaining a correct qualitative understanding of the drag behavior.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Observation of the SU(4) Kondo state in a double quantum dot

Central to condensed matter physics are quantum impurity models, which describe how a local degree of freedom interacts with a continuum. Surprisingly, these models are often universal in that they can quantitatively describe many outwardly unrelated physical systems. Here we develop a double quantum dot-based experimental realization of the SU(4) Kondo model, which describes the maximally symmetric screening of a local four-fold degeneracy. As demonstrated through transport measurements and detailed numerical renormalization group calculations, our device affords exquisite control over orbital and spin physics. Because the two quantum dots are coupled only capacitively, we can achieve orbital state- or "pseudospin"-resolved bias spectroscopy, providing intimate access to the interplay of spin and orbital Kondo effects. This cannot be achieved in the few other systems realizing the SU(4) Kondo state.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Nonsaturating Dephasing Time at Low Temperature in an Open Quantum Dot

We report measurements of the electron dephasing time extracted from the weak localization (WL) correction to the average conductance in an open AlGaAs/GaAs quantum dot from 1 K to 13 mK. In agreement with theoretical predictions but in contrast with previous measurements in quantum dots, the extracted dephasing time does not saturate at the lowest temperatures. We find that the dephasing time follows an inverse linear power law with temperature. We determine that the extraction of the dephasing time from WL is applicable down to our lowest temperatures, but extraction from finite magnetic field conductance fluctuations is complicated by charging effects below 13 mK.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Pseudospin-Resolved Transport Spectroscopy of the Kondo Effect in a Double Quantum Dot

We report measurements of the Kondo effect in a double quantum dot (DQD), where the orbital states act as pseudospin states whose degeneracy contributes to Kondo screening. Standard transport spectroscopy as a function of the bias voltage on both dots shows a zero-bias peak in conductance, analogous to that observed for spin Kondo in single dots. Breaking the orbital degeneracy splits the Kondo resonance in the tunneling density of states above and below the Fermi energy of the leads, with the resonances having different pseudospin character. Using pseudospin-resolved spectroscopy, we demonstrate the pseudospin character by observing a Kondo peak at only one sign of the bias voltage. We show that even when the pseudospin states have very different tunnel rates to the leads, a Kondo temperature can be consistently defined for the DQD system.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Coulomb Blockade in an Open Quantum Dot

We report the observation of Coulomb blockade in a quantum dot contacted by two quantum point contacts each with a single fully-transmitting mode, a system previously thought to be well described without invoking Coulomb interactions. At temperatures below 50 mK we observe a periodic oscillation in the conductance of the dot with gate voltage that corresponds to a residual quantization of charge. From the temperature and magnetic field dependence, we infer the oscillations are Mesoscopic Coulomb Blockade, a type of Coulomb blockade caused by electron interference in an otherwise open system.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Electrical control of spin relaxation in a quantum dot

We demonstrate electrical control of the spin relaxation time T_1 between Zeeman split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the orbital states of the dot using gate voltages we vary the relaxation rate W= (T_1)^-1 by over an order of magnitude. The dependence of W on orbital confinement agrees with theoretical predictions and from these data we extract the spin-orbit length. We also measure the dependence of W on magnetic field and demonstrate that spin-orbit mediated coupling to phonons is the dominant relaxation mechanism down to 1T, where T_1 exceeds 1s.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Spin-Dependent Tunneling of Single Electrons into an Empty Quantum Dot

Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the ratio decreases with increasing magnetic field until tunneling into the excited spin state is completely suppressed. However, we find that by adjusting the voltages on the surface gates to change the orbital configuration of the dot we can restore tunneling into the excited spin state and that the ratio reaches a maximum when the dot is symmetric.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Energy Dependent Tunneling in a Quantum Dot

We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.

0 citations0 reviewsNo code linkedOpen access