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H. Rafii-Tabar

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Published work

2 published item(s)

preprint2010arXiv

Strain effect on quantum conductance of graphene nanoribbons from maximally localized Wannier functions

Density functional study of strain effects on the electronic band structure and transport prop- erties of the graphene nanoribbons (GNR) is presented. We apply a uniaxial strain in the x (nearest-neighbor) and y (second nearest-neighbor) directions, related to the deformation of zigzag and armchair edge GNRs (AGNR and ZGNR), respectively. We calculate the quantum conduc- tance and band structures of the GNR using the Wannier function in a strain range from -8% to +8% (minus and plus signs show compression and tensile strain). As strain increases, depending on the AGNR family type, the electrical conductivity changes from an insulator to a conductor. This is accompanied by a variation in the electron and hole effective masses. The compression x direction strain in ZGNR shifts some bands to below the Fermi level (Ef ) and the quantum conductance does not change, but the tensile x direction strain causes an increase in the quantum conductance to 10e2/h near the Ef . For transverse direction, it is very sensitive to strain and the tensile y direction strain causes an increase in the conductance while the compressive y direction strain decreases the conductance at first but increases later.

preprint2010arXiv

Uniaxial strain on gapped graphene

We study the effect of uniaxial strain on the electronic band structure of gapped graphene. We consider two types of gapped graphene, one which breaks the symmetry between the two triangular sublattices (staggered model), and another which alternates the bonds on the honeycomb lattice (Kekulé model). In the staggered model, the effect of strains below a critical value is only a shift of the band gap location. In the Kekulé model, as strain is increased, band gap location is initially pinned to a corner of the Brillouin zone while its width diminishes, and after gap closure the location of the contact point begins to shift. Analytic and numerical results are obtained for both the tight-binding and Dirac fermion descriptions of gapped graphene.