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A. Iraji zad

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Published work

5 published item(s)

preprint2016arXiv

Tunable bandgap and spin-orbit coupling by composition control of MoS$_{2}$ and MoO$_{x}$ (X=2 and 3) compounds

We report on composition controlled MoS$_{2}$ and MoO$_{x}$ (x=2 and 3) compounds electrodeposited on Flourine dopped Tin Oxide (FTO) substrate. It was observed that the relative content has systematic electrical and optical changes for different thicknesses of layers ranging from $\approx$20 to 540 nm. Optical and electrical bandgaps reveals a tuneable behavior by controlling the relative content of compounds as well as a sharp transition from p to n-type of semiconductivity. Moreover, spin-orbit interaction of Mo 3d doublet enhances by reduction of MoO$_{3}$ content in thicker films. Our results convey path-way of applying such compounds in optoelectronics and nanoelectronics devices.

preprint2011arXiv

Micro helical polymeric structures produced by variable voltage direct electrospinning

Direct near field electrospinning is used to produce very long helical polystyrene microfibers in water. The pitch length of helices can be controlled by changing the applied voltage, allowing to produce both micro springs and microchannels. Using a novel high frequency variable voltage electrospinning method we found the helix formation speed and compared the experimental buckling frequency to theoretical expressions for viscous and elastic buckling. Finally we showed that the newmethod can be used to produce new periodic micro and nano structures.

preprint2010arXiv

Strain effect on quantum conductance of graphene nanoribbons from maximally localized Wannier functions

Density functional study of strain effects on the electronic band structure and transport prop- erties of the graphene nanoribbons (GNR) is presented. We apply a uniaxial strain in the x (nearest-neighbor) and y (second nearest-neighbor) directions, related to the deformation of zigzag and armchair edge GNRs (AGNR and ZGNR), respectively. We calculate the quantum conduc- tance and band structures of the GNR using the Wannier function in a strain range from -8% to +8% (minus and plus signs show compression and tensile strain). As strain increases, depending on the AGNR family type, the electrical conductivity changes from an insulator to a conductor. This is accompanied by a variation in the electron and hole effective masses. The compression x direction strain in ZGNR shifts some bands to below the Fermi level (Ef ) and the quantum conductance does not change, but the tensile x direction strain causes an increase in the quantum conductance to 10e2/h near the Ef . For transverse direction, it is very sensitive to strain and the tensile y direction strain causes an increase in the conductance while the compressive y direction strain decreases the conductance at first but increases later.

preprint2007arXiv

Etched Glass Surfaces, Atomic Force Microscopy and Stochastic Analysis

The effect of etching time scale of glass surface on its statistical properties has been studied using atomic force microscopy technique. We have characterized the complexity of the height fluctuation of a etched surface by the stochastic parameters such as intermittency exponents, roughness, roughness exponents, drift and diffusion coefficients and find their variations in terms of the etching time.

preprint2003arXiv

Height Fluctuations and Intermittency of $V_2 O_5$ Films by Atomic Force Microscopy

The spatial scaling law and intermittency of the $V_2 O_5$ surface roughness by atomic force microscopy has been investigated. The intermittency of the height fluctuations has been checked by two different methods, first, by measuring scaling exponent of q-th moment of height-difference fluctuations i.e. $C_q = < |h(x_1) - h(x_2)|^{q} >$ and the second, by defining generating function $Z(q,N)$ and generalized multi-fractal dimension $D_q$. These methods predict that there is no intermittency in the height fluctuations. The observed roughness and dynamical exponents can be explained by the numerical simulation on the basis of forced Kuramoto-Sivashinsky equation.