Josephson coupling in high-T superconducting junctions using ultra-thin BaTiO barriers
We study the electrical transport of vertically-stacked Josephson tunnel junctions using GdBaCuO electrodes and a BaTiO barrier with thicknesses between 1 nm and 3 nm. The junctions with an area of 20 mm x 20 mm were fabricated combining optical lithography and ion etching using GdBaCuO (16 nm) / BaTiO (1 - 3 nm) / GdBaCuO (16 nm) trilayers growth by sputtering on (100) SrTiO. Current-voltage measurements at low temperatures show a Josephson coupling for junctions with BaTiO barriers of 1 nm and 2 nm. Reducing the barrier thickness bellow a critical thickness seems to suppress the ferroelectric nature of the BaTiO. The Josephson coupling temperature is strongly reduced for increasing barrier thicknesses, which may be related to the suppression of the superconducting critical temperature in the bottom GdBaCuO due to stress. The Josephson energies at 12 K are of 1.5 mV and 7.5 mV for BaTiO barriers of 1 nm and 2 nm. Fraunhofer patterns are consistent with fluctuations in the critical current due to structural inhomogeneities in the barriers. Our results are promising for the development of Josephson junctions using high-T electrodes with energy gaps much higher than those usually present in conventional low-temperature superconductors.