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Researcher profile

H. Munekata

H. Munekata contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.optics

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Published work

9 published item(s)

preprint2016arXiv

Mechanism of photo-excited precession of magnetization in (Ga,Mn)As on the basis of time-resolved spectroscopy

Aiming at studying the mechanism of photo-excited precession of magnetization in ferromagnetic (Ga,Mn)As, magneto-optical (MO) and differential reflectivity (DR) temporal profiles are studied at relatively long and ultra-short time scales for samples with different Mn contents (x=0.01-0.11). As to the oscillatory MO profiles observed in the long time scale, simulation based on the LLG equation combined with two different MO effects confirms photo-inducement of the perpendicular anisotropy component p-Heff. As for the profiles observed in the ultra-short time scale, they are consistently explained in terms of the dynamics of photo-generated carriers, but not by the sudden reduction in magnetization. With those experimental results and analyses, new mechanism which accounts for the photo-induced p-Heff is addressed; photo-ionization like excitation of Mn(II). Namely, Mn(II) is excited into Mn(III) and e . It is discussed that such excitation tips magnetic anisotropy toward the out-of-plane direction through the inducement of orbital angular momentum and the gradient dMn(II*)/dz. Validity of the proposed mechanism is examined by estimating the efficiency of excitation on the basis of the Lambert-Beer law and the experimental p-Heff values, through which the efficiency of 1-10 ppm with the nominal optical cross section of around 5 x 10^12 m^2 are obtained.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A spin light emitting diode incorporating ability of electrical helicity switching

Fabrication and optical characteristics of a spin light-emitting-diode (spin-LED) having dual spin-injection electrodes with anti-parallel magnetization configuration are reported. Alternating a current between the two electrodes using a PC-driven current source has led us to the observation of helicity switching of circular polarization at the frequency of 1 kHz. Neither external magnetic fields nor optical delay modulators were used. Sending dc-currents to both electrodes with appropriate ratio has resulted in continuous variation of circular polarization between the two opposite helicity, including the null polarization. These results suggest that the tested spin-LED has the feasibility of a monolithic light source whose circular polarization can be switched or continuously tuned all electrically.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Circularly polarized light detector based on ferromagnet/semiconductor junctions

Helicity-dependent photocurrent delta-I has been detected successfully under experimental configuration that a circularly polarized light beam is impinged with a right angle on a cleaved sidewall of the Fe/x-AlOx/GaAs-based n-i-p double-heterostructure. The photocurrent delta-I has showed a well-defined hysteresis loop which resembles that of the magnetization of the in-plane magnetized Fe layer in the devices. The value of delta-I has been |delta-I|~0.2 nA at 5 K under the remnant magnetization state. Study on temperature dependence of the relative delta-I value at H = 0 has revealed that it is maximized at temperatures 125 - 150 K, and is still measurable at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Dynamics of magnetization and carriers at the onset of the photo-excited precession of magnetization in (Ga,Mn)As

Photo-excited precession of magnetization in (Ga,Mn)As is investigated by measuring time-resolved magneto-optical response and transient differential reflectivity with pump-and-probe technique. In the time region less than 1 ps, rapidly oscillating and spike-like signals are observed, respectively, with excitation of below and above the GaAs band gap. Analysis with gyromagnetic model and autocorrelation function concludes that those signals are not attributed to ultrafast demagnetization but due to interference between pump and probe pulses incorporating sub-ps carrier dynamics characteristic of low-temperature grown semiconductors. Photo-ionization of Mn ions (Mn2+ -> Mn3+) is proposed as a mechanism which dynamically induces orbital angular momentum and affects hole-mediated magnetic anisotropy in (Ga,Mn)As.

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preprint2014arXiv

Incidence Angle and Polarization Dependence of Photo-Induced FMR in Co/Pd Multilayers

Dependence of photo-induced FMR (phi-FMR) on incident angle of excitation and probing laser beams has been studied in a [Co (dCo = 0.78 nm) / Pd (dPd = 0.81 nm) ]5 multi-layer film with the aim to find experimentally the limitation of inducement and detection of magnetization dynamics with oblique light incidence. We have found, in the experiments changing the incident angle of a pump beam, that phi-FMR is observed up to the grazing incident angle of 88 degrees with p-polarized excitation pulses, whereas it disappears at the incidence angle of around 65 degrees with s-polarized excitation. As for the experiments changing the incident angle of a probe beam, phi-FMR disappears at the incidence angle of 65 degrees for both s- and p-polarizations, whereas it reappears with further increasing the angle for the p-polarization and vanishes at 75 degrees.

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preprint2013arXiv

Efficient spin injection through a crystalline AlOx tunnel barrier prepared by the oxidation of an ultra-thin Al epitaxial layer on GaAs

We report that an ultra-thin, post-oxidized aluminum epilayer grown on the AlGaAs surface works as a high-quality tunnel barrier for spin injection from a ferromagnetic metal to a semiconductor. One of the key points of the present oxidation method is the formation of the crystalline AlOx template layer without oxidizing the AlGaAs region near the Al/AlGaAs interface. The oxidized Al layer is not amorphous but show well-defined single crystalline feature reminiscent of the spinel gamma-AlOx phase. A spin-LED consisting of an Fe layer, a crystalline AlOx barrier layer, and an AlGaAs-InGaAs double hetero-structure has exhibited circularly polarized electroluminescence with circular polarization of P_{EL} = 0.145 at the remnant magnetization state of the Fe layer, indicating the relatively high spin injection efficiency (epsilon = 2P_{EL} / P_{Fe}) of 0.63.

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preprint2010arXiv

Above-Bandgap Magneto-optical Kerr Effect in Ferromagnetic GaMnAs

We have performed a systematic magneto-optical Kerr spectroscopy study of GaMnAs with varying Mn densities as a function of temperature, magnetic field, and photon energy. Unlike previous studies, the magnetization easy axis was perpendicular to the sample surface, allowing us to take remanent polar Kerr spectra in the absence of an external magnetic field. The remanent Kerr angle strongly depended on the photon energy, exhibiting a large positive peak at $\sim1.7$ eV. This peak increased in intensity and blue-shifted with Mn doping and further blue-shifted with annealing. Using a 30-band ${\bf k\cdot p}$ model with antiferromagnetic $s,p$-$d$ exchange interaction, we calculated the dielectric tensor of GaMnAs in the interband transition region, assuming that our samples are in the metallic regime and the impurity band has merged with the valence band. We successfully reproduced the observed spectra without \emph{ad hoc} introduction of the optical transitions originated from impurity states in the band gap. These results lead us to conclude that above-bandgap magneto-optical Kerr rotation in ferromagnetic GaMnAs is predominantly determined by interband transitions between the conduction and valence bands.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Propagating Coherent Acoustic Phonon Wavepackets in InMnAs/GaSb

We observe pronounced oscillations in the differential reflectivity of a ferromagnetic InMnAs/GaSb heterostructure using two-color pump-probe spectroscopy. Although originally thought to be associated with the ferromagnetism, our studies show that the oscillations instead result from changes in the position and frequency-dependent dielectric function due to the generation of coherent acoustic phonons in the ferromagnetic InMnAs layer and their subsequent propagation into the GaSb. Our theory accurately predicts the experimentally measured oscillation period and decay time as a function of probe wavelength.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

Electronic structure of In$_{1-x}$Mn$_x$As studied by photoemission spectroscopy: Comparison with Ga$_{1-x}$Mn$_x$As

We have investigated the electronic structure of the $p$-type diluted magnetic semiconductor In$_{1-x}$Mn$_x$As by photoemission spectroscopy. The Mn 3$d$ partial density of states is found to be basically similar to that of Ga$_{1-x}$Mn$_x$As. However, the impurity-band like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga$_{1-x}$Mn$_x$As. This difference would explain the difference in transport, magnetic and optical properties of In$_{1-x}$Mn$_x$As and Ga$_{1-x}$Mn$_x$As. The different electronic structures are attributed to the weaker Mn 3$d$ - As 4$p$ hybridization in In$_{1-x}$Mn$_x$As than in Ga$_{1-x}$Mn$_x$As.

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